MT03P Search Results

2SK1536

Abstract: k1536 k1536 mosfet to1a AC240V F3W90 SHINDENGEN DIODE
Contextual Info: h v x v ' J - t : /\or7 —m o s f e t HVX Series Power MOSFET 2SK1536 o u t l in e d im e n s i o n s Case MT0-3P F3W90 [U n it '. m m ] 5.0 » 3 900V 3A •A * § * (C iss) f f 'J v S l V if ICti □ ; W Z X fêfflÀ tfê ô V M lA ex-< y? y ^ S 'f Affäiv

Contextual Info: S c h o ttk y B a rrie r D io d e s Twin Diodes Electrical C h ara cteristics A b solute M a x im u m R atings VF Part No. 60 9M D10SD6M S10SC4M 4MR 90 60 [°C /W ] 0.55 0.58 1.0 2 1 65 120 — — 2 — 3.3 150 0.55 2.5 2.5 116 150 0.45 0.55 0.58 0.4 2.5

MC1A301AT

Abstract: CL25D300T CL04A400M CK08CA311 CL09A300M CL00A301T CK75CA311 cl02d310t CL02A400T CL05A400M
Contextual Info: 39584 GE Consumer & Industrial Power Protection GE Consumer & Industrial Power Protection formerly GE Power Controls , a division of GE Consumer & Industrial, is a first class European supplier of low-voltage products including wiring devices, residential and industrial electrical

Schottky Diode s30sc4m

Abstract: SHINDENGEN DIODE s30sc4m
Contextual Info: y 3 y h * / \ ' U 7 K "J O i Twin Diode Schottky Barrier Diode OUTLINE DIMENSIONS S30SC4M Case : MT0-3P 40V 30A •T j # P • 1sot; x S K hhsm e jc ô '/ j'S L i •xmmm « ì* • S R S ig • D C /D C n ^ A -^ •mm, v-u. •a«. /K • Ë të ft o a# ü

2SK2177

Contextual Info: E-pack Lead type ITO-220 MT0-3P IT0-3P ST0-220 TO-220 MT0-3L N-Channel, Enhancement type Type No. E IA J Absolute Maximum Ratings Electrical Characteristics Tch Voss Voss Id Pt Rds (o n ) (max) [•c] [V ] [V ] [A ] [W ] to ] [p F] [p F] [ns] [ns] 0.84 385

2SC4236

Contextual Info: x i 'j + 's 'î r t 7 - h Sw itching P o w e r Transistor H FX series Outline Dimensions 6a 2SC4236 NPN (T6W80HFX) Case : MT0-3P 5.01 “3 2.0 ±0-3 2.410.3 0.65ta» Unit : mm Absolute Maximum Ratings « e ie Item 4k Symbol • '■<— ¿.MB. C ollector to B a s e V oltage

2SK1397

Abstract: F40W25
Contextual Info: L V X î/ U - X /17-M O S FE T LVX SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case : MT0-3P 2SK1397 F40W 25 5.0±»3 250v 40a [Unit • mm] ■ Æ fê S l R A T IN G S ■ A b s o lu te M a x im u m R a tin g s m Be § Ite m %. S ym bol ft m.

MT03P

Contextual Info: H igh V o lta g e • H igh S p e ed S w itc h in g T ra n s is to rs HDT series Bipolartransistors NPN Parts No. Absolute Maximum Ratings Electrical Characteristics V c eo hFE V CE V be (sat) (sat) (max) (m ax) [V] [V] 0jc fT ton ts tf (m ax) (max) (max)

f20lc

Abstract: SF5LC20U 20LC20u D200LC40B smd 10 20U D200L DIODE 542 SMD
Contextual Info: S u p e r F a s t R e c o v e r y D io d e s Twin Diodes Absolute Maximum Ratings Electrical Characteristics |R t rr 0j/ Vf Parts No. V rm lo Conditions I fsm max Conditions (max) [V] [A] If VR=VRM [°C] [A] [A] [mA] 132 125 81 61 45 [V] 0.98 1.3 0.98 1.3

toco

Abstract: 2SK1396 K1396 F30W25
Contextual Info: L V X v U -X MOSFET LVX SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case ' MT0-3P 2SK 1396 F30W25 5.0Ì0.3 250v 30a . 2.0±0-3 2.4i0-3 0.65±Q2 [U n it ^ m m] ■ Æ fê ü RATINGS A b s o lu te M a x im u m m R a tin g s ;. I B . Ite m -J # C ond itio ns

Contextual Info: H V X -ïïv'J—X 7X9-MOSFET H V X -ÏÏ SERIES POWER MOSFET • 2SK2667 O U T L IN E DIM ENSIONS Case : MT0-3P F3W90HVX2 5.0 ï°-3 900v 3a 2.QIQ.3 2 .4 * » 0.65*°» > y ■ [Unit ‘ mm] RATINGS ■ Absolute Maximum R atings @ m Item te (T c= 2 5 °C )

Contextual Info: Pow er M O S F E T HVX series N-Channel, Enhancement type Part No. Absolute Maximum Ratings Electrical Characteristics R d s ON ton toff EIAJ Tch V dss V g ss ID Pt (max) (typ) (typ) No. [°C ] [V] [V] [A] [W ] [Q ] [ns] [ns] Package Fig. 1 10 50 30 70 100

2SC4314

Contextual Info: Switching Power Transistor 15a H D T series Outline Dimensions 2SC4314 Case : MT0-3P CT15W80HDT NPN) 5.0±o.j 2.2±o.5 ^3 .3 ^ 2.0*03 2.4 ±M Q.65±°-g Unit • mm • > Ê & # ^ 5 Ë tè m Absolute Maximum Ratings Item § I E Storage Temperature Junction Temperature

2SC4063

Abstract: 2sc4085 2SC4064 2SC4088 2sa1572 2SC4066 2SA1516 2sa157 2SA1571 2SC4062
Contextual Info: - 186 - Ta=25U*EP(äTc=25t> 2SC4057 fr 7C PSW 2SC4058 PSW 2SC4059 PSW 2SC4060 PSW 2SC4062 2SC4063 2SC4064 2SC4065 BM y*ry v>ry VCBO VcEO Ice DC) (V) (V) (A) Ä Pe Pe* IcBO (W) (W) (max) (//A) W fé tt (13=25*0 VcB (V) (min) [*EPÍÍtypíS] VcE(sat) VßE(sat)

2SB 545

Abstract: 030VC60 smd tra 14 SMD T26 1AMM ST0220 Am 170 415
Contextual Info: Basic Ordering and Packing Form Explanation o f P acking L is ts 1. Type No. Example 1 D1ND ^- R everse voltage X 1/10. Example 2 2SK 2663 E IA J No. E IA J C lassification. 2SA , 2SB , 2S C , 2SD T ra n s is to r 2 S J : M osfet Reel width 2. Code No.

Contextual Info: HVX-I^U-X /f7—MOSFET H V X -Ï SERIES POWER MOSFET N - i- v ^ B T fä s B I hM O U T L IN E D IM E N S IO N S Case : MT0-3P 2SK2676 F10W90HVX2 5.0Ì0-3 ¿3.3*°-* 900v 10a 2.0±0-3 2.4t0-3 0.65±»-î @ : Gate (D Drain (3) '. S o u rce [Unit •mm] ■

Contextual Info: y a y h + M 'J 7 ^ i-K -y<>m Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S20SC9M Case : MT0-3P i 3.3 * 02 90V 20A m a •TÌ150TC 7i^yiyxUÿi •P rrs m • e jc f iV Jv ÿ n D <D • S R S iS • DC/DC 3 y i< .—P •mm, <f-h, • « a , m o a *ü

Contextual Info: H V X - I I v U - X 7 t 7 - MOSFET H V X -I SERIES POWER MOSFET N - i- v ^ k O U T L IN E D IM ENSIONS Case :MT0-3P F7W 90HVX2 5.0 * 0* ,2±«.5 900v 7a 2.0 ±Q-3 2.4 * 0* Q,65±0-2 • G a te (2) I D rain (3) ‘ Source I ® [U n it '• mm] RA TIN G S

FDN36MC100GD

Abstract: magnetic Contactor wiring diagrams and float switch CL03A FDN36MC080GD star delta FORWARD REVERSE STARTER GPF10C02 GPS1bsah LG0006P1B0 CL07A CL03A-CL04A
Contextual Info: 39584 GE Consumer & Industrial Power Protection GE Consumer & Industrial Power Protection formerly GE Power Controls , a division of GE Consumer & Industrial, is a first class European supplier of low-voltage products including wiring devices, residential and industrial electrical

SHINDENGEN TR 222

Abstract: D2S860 D25VB60 F10LC20U S1WBA60B D15VBA d15vba60 D4SBA80 DF25SC6M d3sb60 86
Contextual Info: 1. • -« g a ff* * lo A V V rm (y \ ^ < 4 ^ 0.4 0.8 1 a» S1YB60 S1NB20 S1NB60 S1WBA60 S1WBA60B S1WBA20 S1VB20 S1NB80 1 1.4 S1WBA80Z 1.7 600 800 SHINDENGEN D2SBA20 D2SBA60 LN2SB60 D3B20 D3SBA20 U4SB20 D3SB60 D4SB80 D3SBA60 D4SBA80 D4SB80Z U4SB60 1.1 5

live parts

Contextual Info: S f 7 ÎH M Æ c n y - ;u k m # -r * - S H IN D E N G E N ’S Insulated P las tic Packages k K '^ y - f +- K -> •; - X 't i & f ó # '* » Shindengen insulated Plastic packages are new products desi­ gned to meet the isolation requirements of U L , etc., without any

Contextual Info: P o w e r M O S FE T VX-II series N-Channel, Enhancement type Part No. EIAJ No. ☆ 2SK2177 ☆ 2178 ☆ 2179 ☆ 2180 ☆ 2181 ☆ 2182 ☆ 2183 ☆ 2184 ☆ 2185 ☆ 2186 ☆ 2187 ☆ 2188 ☆ 2189 ☆ 2190 ☆ 2191 ☆ 2192 ☆ 2193 ☆ 2194 ☆ 2195 ☆

k1536

Abstract: 2SK1536 F3W90 k1536 mosfet
Contextual Info: H V X v 'J - X A 7 -M 0 S F E T H V X SERIES POWER MOSFET ? fïïW £ [I] O U T L IN E D IM E N S IO N S Case : MT0-3P 2SK1536 .H5 I 6 -0 .1 CF3W90 Date code j ¥1 au EIAJ No. c \ D S 1.2±o-2 2) Drain (3) Source 5 . 4 5 ± û -2j £» S eg 0.65^o2 5 .4 5 *0 -2

Contextual Info: .r lU I Switching Power Transistor S 6 P I6 S O utline Dimensions 6a 2SC4312 NPN (T 6 W 8 0 H D T ) Case I MT0-3P .,+o.s 5.0 * 0 » 1 6 - 0.1 2.2±»-5 i M Ì H p?ne3 -JÇ Date code 2.0*o.3 I &fe»85 -C4312 EIAJNo. -B C E FOT yiMiM 2.4 * » MAX 2.5 3.5