TF 620 M Search Results

MC10105

Abstract: DL122 T433
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Triple 2-3-2-Input OR/NOR Gate MC10105 The MC10105 is a triple 2–3–2 input OR/NOR gate. PD = 30 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%–80%) L SUFFIX CERAMIC PACKAGE CASE 620–10 P SUFFIX

mc10109

Abstract: DL122
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual 4-5-Input OR/NOR Gate MC10109 The MC10109 is a dual 4–5 input OR/NOR gate. PD = 30 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%–80%) L SUFFIX CERAMIC PACKAGE CASE 620–10 LOGIC DIAGRAM 4 5

MC10106

Abstract: MC10106FN MC10106L MC10106P
Contextual Info: MC10106 Triple 4-3-3-Input NOR Gate • • • The MC10106 is a triple 4–3–3 input NOR gate. PD = 30 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%–80%) http://onsemi.com MARKING DIAGRAMS LOGIC DIAGRAM 4 5 16 CDIP–16 L SUFFIX CASE 620

tsha 6203

Abstract: TSHA520 TSHA6200 TSHA6201 TSHA6202 TSHA6203
Contextual Info: TELEFUNKEN Semiconductors TSHA 620. GaAlAs Infrared Emitting Diode in ø 5 mm T–1¾ Package Description The TSHA 620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

tept5600 response time

Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
Contextual Info: w w w. v i s h a y. c o m Selector Guide Infrared Emitters, Photo Detectors and optical sensors Op t o e l e c t r o n i cs V I S HAY INTERTE C HNOLO G Y , IN C . infrared emitters, Photo Detectors, and Optical Sensors introduction as one of the world’s leading suppliers of infrared emitters, photo detectors, and optical sensors, Vishay offers an extraordinarily

Contextual Info: I N AUER PHILIPS/DISCRETE I b b S S ^ l QQEbSQT QT7 b'lE » APX BYOiy B Y 620 E.H.T. AVALANCHE VERY FAST SOFT-RECOVERY DIODES E.H.T. rectifier diodes in hermetically-sealed, axially-leaded glass envelope and designed for c.t.v. and monitor applications with frequencies up to 128 kHz. They are suitable for use in high-voltage

Contextual Info: Ultra Bright LED Lamps T Y PE NO. M SB 78D A SOURCE COLOUR G aA IA s R ed Xp nm 660 IV MIN Vf If MAX If (m c d ) (mA) (V) (mA) 4.3 20 2.4 20 LENS CHARACTERISTICS VIEW ING ANGLE 20 1/2 (degree) R ed D iffused 180 R ed D iffused 86 PACKAGE 5.0 x 5.0m m R ectan g u lar B ars

Contextual Info: I Til 31 OCiii!* 35 Vìi riti » 1 .3 2 .0 G H . 5 1 Ohm Power Hybrid Description G ua ra ntee d P erform ance at 1.93 to 1.99 G Hz, 28 V - O utpu t P ow er = 32 W atts (P -1dB Min - P ow er G ain = 11 dB Min - E fficiency = 35 % Min @ P-1dB T he 1920-35 is a 5 0 -o h m p o w e r hybrid intended fo r ap plicatio ns

Contextual Info: ill# ICW 0RKS Preliminary W153B Spread Spectrum FTG for SÌS530 & 620 Chip Sets Features • Maximized EMI suppression using IC WORKS’ Spread Spectrum Technology • Single chip system frequency synthesizer for SiS530 and SiS620 core logic chip sets • Three copies of CPU output

Contextual Info: Preliminary W153B III# ICW0RKS Features • Maximized EMI suppression using IC W O R K S ’ Spread Spectrum Technology • Single chip system frequency synthesizer for SiS530 and SiS620 core logic chip sets • Three copies of CPU output • Six copies of PCI output

D0217

Abstract: IRFP 620 IRF622 application FZJ 111 irf 44 n FZJ 101 transistor irf620 pj62 IRF620 IRF621
Contextual Info: 3GE » • 7^23? 002=1703 1 ■ ' T v3P|- [ S G S -T H O M S O N * 7 # [ * œ Œ ( g r a [ i * § r= IR F 6 2 0 / F I - 6 2 1 /F I IR F 6 2 2 / F I - 6 2 3 /F I Z S G S-thomJoF TYPE N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS 200 V 200 V ^DS(on

SII200S12

Abstract: IGBT 150A
Contextual Info: SII200S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode

SID200S12

Abstract: TF 620 M
Contextual Info: SID200S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode

SDI200S12

Contextual Info: SDI200S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode

SN55976A

Abstract: SN75976A SN75LBC976
Contextual Info: SN75976A, SN55976A 9-CHANNEL DIFFERENTIAL TRANSCEIVER SLLS218B – MAY 1995 – REVISED MAY 1997 D D D D D D D D D D D Improved Speed and Package Replacement for the SN75LBC976 Designed to Operate at up to 20 Million Data Transfers per Second Fast-20 SCSI

4539B

Abstract: hd14549 fcp 210 4549B HD14549B MC14549B mc14549
Contextual Info: 180 — — 4539B Dual 4 Channel D ata Selector/M ultiplexer • HIE •5HÜ *z\s?9 4 tV h xn l t '- y h * -n 2 mm. 3*7—h £ L A^-'TlV L 16 V d q 15 S T y 4 -1 4 A — .13 Y 3 11 Y •10 Y , 9 W ■ za « '> * y r m « tr "L " ■ tf IZ T il tcffiv >5 ; t

SN75976A

Abstract: SN75LBC976 SN55976A
Contextual Info: SN75976A, SN55976A 9-CHANNEL DIFFERENTIAL TRANSCEIVER SLLS218B – MAY 1995 – REVISED MAY 1997 D D D D D D D D D D D Improved Speed and Package Replacement for the SN75LBC976 Designed to Operate at up to 20 Million Data Transfers per Second Fast-20 SCSI

Contextual Info: SN65HVD09-EP SLLSEA3 – DECEMBER 2011 www.ti.com 9-CHANNEL RS-422 / RS-485 TRANSCEIVER Check for Samples: SN65HVD09-EP FEATURES 1 • • • • • • • Designed to Operate at up to 20 Million Data Transfers per Second on Each RS-422/RS-485 Channel SN65HVD09 Packaged in Thin Shrink

SN75976A

Abstract: SN75976A1DGG SN75976A1DGGR SN75976A2DGG SN75976A2DGGR SN75LBC976
Contextual Info: SN75976A 9-CHANNEL DIFFERENTIAL TRANSCEIVER SLLS218A – MAY 1995 – REVISED APRIL 1996 D D D D D D D D D D SN75976A DGG or DL TOP VIEW Improved Speed and Package Replacement for the SN75LBC976 Designed to Operate at up to 20 Million Data Transfers per Second (Fast-20 SCSI)

Texas Instruments TTL integrated circuits catalog

Contextual Info: SN65HVD09-EP SLLSEA3 – DECEMBER 2011 www.ti.com 9-CHANNEL RS-422 / RS-485 TRANSCEIVER Check for Samples: SN65HVD09-EP FEATURES 1 • • • • • • • Designed to Operate at up to 20 Million Data Transfers per Second on Each RS-422/RS-485 Channel SN65HVD09 Packaged in Thin Shrink

Contextual Info: BIPOLAR TRANSISTOR MODULES ' Ratings and Specifications jjfi 600 volts class high F ife — power transistor modules • Because this m o d u le has 10 tim e s or m o re th e con vention al DC cu rren t gain, set p ro p o rtio n a lly fo r each ele m en t

221D

Abstract: A114 mosfet 620
Contextual Info: NDF06N62Z, NDP06N62Z N-Channel Power MOSFET 620 V, 0.98 W, Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant http://onsemi.com ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted

7N52DK3

Contextual Info: STD7N52DK3 STF7N52DK3, STP7N52DK3 N-channel 620 V, 0.98 Ω, 6.2 A, DPAK, TO-220FP, TO-220 SuperFREDmesh3 Power MOSFET Preliminary data Features Type VDSS RDS on max ID Pw 3 1 STD7N52DK3 STF7N52DK3 STP7N52DK3 620 V 620 V 620 V < 1.15 Ω < 1.15 Ω < 1.15 Ω

Contextual Info: STFILED627, STPLED627 N-channel 620 V, 0.95 Ω typ., 7.0 A Power MOSFET in I²PAKFP and TO-220 Datasheet - production data Features TAB Order codes STFILED627 STPLED627 3 1 2 1 2 620 V < 1.2 Ω ID PTOT 7.0 A 30 W 3 • 100% avalanche tested I²PAKFP TO-220