TEXAS OPTOELECTRONICS Search Results

schematic diagram 48v dc convertor tl3845

Abstract: sg3524 spice model for pspice schematic diagram 48v ac regulator uc3842 schematic diagram inverter 12v to 24v 30a audio Amp. mosfet 1000 watt 24v dc motor speed control lm324 mini-LVDS and TFT-LCD Timing Controller sg3524 spice model UC1825 spice 500 watt power circuit diagram uc3825
Contextual Info: Selection Guide EIGHTH EDITION Analog/Mixed-Signal Products Designer’s Master Selection Guide August 2002 1996, 1997, 1999, 2000, 2001, 2002 Texas Instruments Incorporated IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications,

wireless communication paper presentation

Abstract: biosensor IS-136 TCM29C13 TCM38C17 TMS320 TRF1500 sprb123 Texas Instruments GPS chipset "network interface cards"
Contextual Info: 8 INTEGRATION www.ti.com/sc/9802 FEBRUARY 1998 AN UPDATE ON TEXAS INSTRUMENTS SEMICONDUCTORS TRADE SHOWS Computer Telephony '98 TI offers 1394 seminars • ■ ■ ■ In March, Texas Instruments will offer in-depth technical seminars for 1394 designers and developers. The full-day sessions

Silicon Photocells

Abstract: S1010 photocell encoder silicon photocell Silicon Sensors, Inc s05025 s1020 S0520
Contextual Info: Silicon Photocell Sensors Texas Optoelectronics, Inc. SILICON PHOTOCELL SENSORS TOI silicon photocells are employed in photometer, switching, position detection, tape and disc EOTBOT sensing, solar energy conversion, and other numerous applications. Silicon photosensors with

TOX9103

Contextual Info: T0X9103 Silicon Photodetector Texas Optoelectronics, Inc. DESCRIPTION FEATURES • • The TOX9103 is a high performance silicon photodiode designed to operate in the photo conductive mode. High resistivity silicon is used to provide high 900 nm responsivity and low

Contextual Info: *70# TOX 9001 Gallium Aluminum Arsenide Light Emitting Diode Texas Optoelectronics, Inc. DESCRIPTION FEATURES • • This is a high radiance GaAIAs IR LED optimized for fiber optic applications requiring high power and fast response time. ABSOLUTE MAXIMUM RATINGS

Contextual Info: «701 Texas Optoelectronics, Inc. TOX 9106 NPN Silicon Phototransistors DESCRIPTION The TOX 9106 is an NPN silicon phototransistor mounted in a lensed hermetically sealed TO-18 package. The lensing effect allows an acceptance half angle of typically 10° measured

Contextual Info: TIES27 Gallium Arsenide Infrared-Emitting Diodes Texas Optoelectronics, Inc. DESIGNED TO EMIT NEAR-INFRARED RADIANT ENERGY WHEN FORWARD BIASED • High Output Power . . . 15 mW Min at 25°C • Spectrally Matched to Silicon Sensors . .Peak Emission at 930 nm

Contextual Info: «O f Texas Optoelectronics, 4N41 7-Seament Numeric Display Inc. HERMETICALLY SEALED SOLID-STATE VISIBLE DISPLAY Available with Screening in Accordance with MIL-D-87157, 4N41-TXV Withstands Severe Environmental Conditions Left-Hand Decimal 6,9-mm 0.270-Inch Character Height

Contextual Info: «701 T0X 9005 P-N Gallium Arsenide Infrared-Emitting Diode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9005 is a 940 nm emitter designed for short distance point to point data transmission and position sensing. Designed to emit near-infrared radiation

Contextual Info: TIED56 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED56 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the

A214 diode

Contextual Info: T0X 9005 P-N Gallium Arsenide Infrared-Emitting Diode WO# Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9005 is a 940 nm emitter designed for short distance point to point data transmission and position sensing. Designed to emit near-infrared radiation

diode in 5401

Abstract: for APD bias high-voltage 104 Ceramic Disc Capacitors 100v
Contextual Info: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEATURES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages

Contextual Info: TIED59 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED59 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the

Contextual Info: TO I TOX 9110 Silicon PIN Photodiode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9110 is a high-resistivity silicon PIN detector used in military and commercial light sensor applications. Designed to have high performance from 0.9 //m to 1.06 /jm . The TOX

DP LED 714

Contextual Info: m H ill f f m !• I # ■ 4N56 Hexadecimal Display With Logic Texas Optoelectronics, Inc. HERMETICALLY SEALED SOLID-STATE HEXADECIMAL DISPLAY WITH INTEGRAL TTL CIRCUIT TO ACCEPT, STORE, AND DISPLAY 4-BIT BINARY DATA • Available with Screening in Accordance

L 9104

Abstract: 501184-1 905-138 Amphenol Connectors 5 PIN
Contextual Info: TOI TOX 9104 Silicon PIN Photodiode Texas Optoelectronics, Inc. D ESCRIPTIO N FEATURES This is a silicon PIN photodiode designed for detection of infrared radiation in short length fiber optic and other applications. It is packaged in a modified TO-52 hermetic can which fits

Contextual Info: •701 TIED59 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES Isolated Case fo r Shielding Useful from Audio to Microwave Frequencies Typical Photocurrent Gain > 600 Active Area of 4.5 X 10"3 cm2 Diameter = 30

Contextual Info: TOX 9004 Gallium Aluminum Arsenide Infrared-Emitting Diode mm I lllll I W # l Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9004 is a GaAIAs emitter designed to emit near-infrared radiation when forward biased. • • • • • Output spectrally compatiblte with silicon

Contextual Info: TOX 9110 Silicon PIN Photodiode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The T O X 9110 is a high-resistivity silicon PIN detector used in military and commercial light sensor applications. Designed to have high performance from 0.9 yum to 1.06 //m . The TO X

Contextual Info: TOX 9111/TOX 911 Silicon Photodiodes *701 Texas Optoelectronics, Inc. DESCRIPTION Formerly S37/S38 FEATURES The TOX 9111 and TOX 9112 large area p-silicon photodiodes are used in many laser and infrared systems. These detectors feature low noise and high responsivity. Both use guard ring

Contextual Info: TIED69 Avalanche Photodiode Texas Optoelectronics, Inc. D E SC R IP T IO N FEATURES The TIED69 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the breakdown voltage. T h is results in a

Contextual Info: Texas Optoelectronics, Inc. DESCRIPTION TIED 57/TIED 58 Silicon Avalanche Photodiode FEATURES The T IE D 57 and T IE D 58 are high speed photodiodes with 10 mil or 30 mih active area diameters. Both are designed to operate in the reverse voltage avalanche mode. Applications

Contextual Info: «O f 4N58 5 x 7 Alphanumeric Display With Logic Texas Optoelectronics, Inc. HERMETICALLY SEALED SOLID-STATE DISPLAY W ITH INTEGRAL TTL COLUMN DRIVERS Withstands Military Environmental Conditions 7,6 -m m 0.300-Inch Character Height Integral D-Type Flip-Flop Column Drivers and Series Limiting Resistors

Contextual Info: «OI T0X9105 Large Area Silicon Quadrant Photodiode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9105 is a high-speed quadrantgeom etry, h ig h -re s is tiv ity P-type s ilic o n photodiode. This device is designed specifically for applications in low cost laser alignment,