TIES14 Search Results

Contextual Info: Texas O p to e le c tro n ic s , Inc. TIES14, TIES! 5 Gallium Arsenide Infrared-Emitting Diodes DESIGNED TO EMIT NEAR-INFRARED RADIANT ENERGY WHEN FORWARD BIASED • High Output . . . 60 mW Min at 25 °C for the TIES 14 • Hemispherically Shaped Chips with Diameter of 72 Mils

TIES14

Abstract: TIES15
Contextual Info: ' - ' - "••" ' ■■ w — 1 TEXAS OPTOELECTRONICS INC 10E D I 0 ^ 3 ^ 3 4 Î7D# ~ . r. - -. . 7 . DDDDlDfi M I Texas Optoelectronics, Inc. TIES14, TIES15 Gallium Arsenide Infrared-Emitting Diodes D ESIG N ED TO EM IT NEAR-INFRARED R AD IAN T ENERGY W HEN FO RW ARD BIASED

Contextual Info: Texas Optoelectronics, Inc. TIES 14, TIES 15 Gallium Arsenide Infrared-Emitting Diodes DESIGNED TO EMIT NEAR-INFRARED RADIANT ENERGY WHEN FORWARD BIASED • High Output . . . 60 mW Min at 25 °C for the TIES14 • Hemispherically Shaped Chips with Diameter of 72 Mils

Contextual Info: TIES14 TIES15 Gallium Arsenide Infrared-Emitting Diodes Select Products Here Go Designed to emit near-infrared radiant energy when forward biased FEATURES ● High output 60 mW Min at 25°C for the TIES14 ● Hemispherically shaped chips with diameter of 72 mils

TIL702

Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
Contextual Info: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or