S1020 Search Results

transistor 1BW 57

Abstract: BI 344 TRANSISTOR SSD 650 series
Contextual Info: IMAGE SENSOR Back-thinned TDI-CCD S10200-02, S10201-04, S10202-08, S10202-16 Operating the back-thinned CCD in TDI mode delivers high sensitivity. TDI-CCD captures clear and bright images even under low-light-level conditions. During TDI mode, the CCD captures an image of a moving

S10150

Contextual Info: TAIWAN SEMICONDUCTOR s SR S1020 • SR S10150 10.0 AMPS. Surface M ount Schottky Barrier Rectifiers RoHS COMPLIANCE D*PAK . IK .-1/1V.V. .1?WAÙ * Features <> A<> A' 4<> ^ ❖ •v- — í - a a ¡ :i.< c 1 For surface m ounted application Ideal fo r autom ated pick &. place

Contextual Info: GEC PLESSEY MA28137 M M | M H B n F B i|llw *W •■■■■■■■■■■■■■■■■I * Radiation Hard Programmable DMA Controller S10203FDS Issue 2.4 October 1990 Features • Radiation hard to 1 MRad Si • High SEU immunity, iatch-up free

transistor 1BW 57

Abstract: 1BW TRANSISTOR s254 TRANSISTOR a4 fast linear ccd 512 TRANSISTOR A1 S10200-02 S10201-04 S10202-08 S10202-16
Contextual Info: IMAGE SENSOR Back-thinned TDI-CCD S10200-02, S10201-04, S10202-08, S10202-16 Operating the back-thinned CCD in TDI mode delivers high sensitivity. TDI-CCD captures clear and bright images even under low-light-level conditions. During TDI mode, the CCD captures an image of a moving

ccd board Circuit Schematic Diagram Electronic

Abstract: TDI CCD bi-directional TDI ccd sensor TDI CCD china ccd camera board circuit diagram TRANSISTOR REPLACEMENT GUIDE
Contextual Info: TDI-CCD image sensors S10200-02 S10201-04 S10202-08 S10202-16 Operating the back-thinned CCD in TDI mode delivers high sensitivity. TDI-CCD image sensers capture clear and bright images even under low-light-level conditions. During TDI time delay integration mode, the CCD captures an image of a moving object while transferring integrated signal charges synchronously

Contextual Info: D S1020 DALLAS SEMICONDUCTOR D S 10 20 Programmable 8-Bit Silicon Delay Line FEATURES PIN A S S IG N M E N T • All-silicon time delay • Models with 0.15 ns, 0.25 ns, 0.5 ns, 1 ns, and 2 ns steps a IN • Program m ableusing 3-wire serial port o r8 -b it parallel

TC-130-W

Abstract: BUZ16 BUZ16S2 FD 1652 VVTO515Z 1SS210
Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 16 B U Z16S 2 • N channel • Enhancement mode • Avalanche-rated Type VDS Id BUZ 16 50 V 48 A ^DS on 0.018 ß TO-204 AE C67078-S1020-A2 B U Z 16 S 2 60 V 48 A 0.018 n TO-204 AE C67078-S1020-A3 Package 1> Ordering Code

TDI CCD bi-directional

Contextual Info: IMAGE SENSOR Back-thinned TDI-CCD S10200-02, S10201-04, S10202-08, S10202-16 Operating the back-thinned CCD in TDI mode delivers high sensitivity. TDI-CCD captures clear and bright images even under low-light-level conditions. During TDI mode, the CCD captures an image of a moving

Contextual Info: GEC PLESSEY S IM I <> \ I I ( MA28155 Radiation Hard Programmable Peripheral Interface I () K S S10205FDS Issue 2 September 1990 General Description Features • Radiation Hard to 1 MRad (Si) The M A28155 is a g e n eral purpose p ro g ram m ab le Input/Output device designed for use w ith the MAS281

1750A

Abstract: 1nt02 MAS281 Marconi Electronic Devices mil-std-1750a
Contextual Info: G E C P L E S S E Y mai7503 ' 1 M I C O \ D li C. MIL-STD-1750A Interrupt Unit I O K S S10209FDS Issue 1.4 N ovem ber 1990 Features Block Diagram • M il-Std-1750A Instruction Set A rchitecture • Full Perfo rm an ce o v e r M ilita ry T e m p e ra tu re

N 341 AB

Abstract: N 344 AB BUZ22 BUZ,350 8a5c buz341 C67078-S1406-A2
Contextual Info: SIEMENS SIPMOS*Leistungstransistoren SIPMOS* Power Transistors N-Kanal-Anreicherungstypen N channel enhancement types Typ Type Bestellnummer Ordering code Gehäuse Package Bild Figure 125 C67078-S1020-A2 TO-204 AA 4 40 C67078-S1316-A2 10-220 AB 8a 40 C67078-S1316-A3

OG 72 DN 1024 R

Abstract: OG 72 DN 1024 tdi ccd 512 OSb11 C10000 OG 8 DN 1024 R SGA2 S10200-02 S10201-04 11/CANRX/USBDP-datasheet.htmlhttp:/www.datasheetarchive.com/C10000
Contextual Info: 裏面入射型TDI-CCDイメージセンサ S10200-02 S10201-04 S10202-08 S10202-16 裏面入射型CCDをTDI動作させることで高感度を実現 高速撮像時などの低照度下においても十分な明るさの画像が得られるTDI-CCDです。TDI動作により移動する対象物を積

Contextual Info: GE C PLESSEY SEMI CONDS 43E GEC P LE SS EY D 37baS2S 00147bfl 1 IPLSB m a i ?504 MIL-STD-1750A Memory M anagement Unit/ Block Protect Unit S10208FDS Issue 1.3 O cto ber 1990 Features Block Diagram • Im plem ents Expanded Address and Block Protect Options of the MIL-STD-1750A Notice 1 Architecture

Contextual Info: S1020 DALLAS SEMICONDUCTOR D S1020 Program m able 8-Bit Silicon Delay Line FEA TU R E S PIN A S S IG N M E N T • All-silicon time delay IN I— • Mo de ls with 0.15 ns, 0.25 ns, 0.5 ns, 1 ns, an d 2 ns 1 “ I 16 J V C C 2 15 U steps OUT Us H P7 Q /PO

R36W

Abstract: R2620 S-1010 S1730 VDE 0660 -T200 S-17 R2640 R3560 40.21 relay S1724
Contextual Info: Contactors 2 pole S1010 S1210 S1020 Insulation Voltage U, 690 V 600 V UL/CSA 690 V (600 V UL/CSA) 690 V (600 V UL/CSA) Thermal Current lu/lth open 20 A 16 A 20 A 16 A 32 A 20 A Ampere-Rating UL, CSA 16 amp./600 VAC 20 amp./600 VAC 30 amp./600 VAC Operational Voltage

Contextual Info: TDI-CCDイメージセンサ S10200-02-01 S10201-04-01 S10202-08-01 S10202-16-01 裏面入射型CCDをTDI動作させることで高感度を実現 高速撮像時などの低照度下においても十分な明るさの画像が得られるTDI-CCDイメージセンサです。TDI time delay

Contextual Info: D S1020 PRELIMINARY S1020 DALLAS Program m able 8-B it Silicon Delay Line SEMICONDUCTOR PIN ASSIGNMENT FEATURES • All-silicon time delay ,M[ 1 • Models with 0.25 ns, 0.5 ns, 1 ns, and 2 ns steps • Programmable using 3-wire serial port or 8-bit parallel

Contextual Info: IMAGE SENSOR Back-thinned TDI-CCD S10200-02, S10201-04, S10202-08, S10202-16 Operating the back-thinned CCD in TDI mode delivers high sensitivity. TDI-CCD captures clear and bright images even under low-light-level conditions. During TDI mode, the CCD captures an image of a moving

ac 128 transistor

Contextual Info: TDI-CCD image sensors S10200-02-01 S10201-04-01 S10202-08-01 S10202-16-01 Operating the back-thinned CCD in TDI mode delivers high sensitivity. TDI-CCD image sensers capture clear and bright images even under low-light-level conditions. During TDI time delay integration mode, the CCD captures an image of a moving object while transferring integrated signal charges synchronously

Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 16 BUZ16S2 • N channel • Enhancement mode • Avalanche-rated Type VDS ^DS on 0.018 £2 Ordering Code 50 V Id 48 A Package 1> BUZ 16 TO-204 AE C67078-S1020-A2 BUZ16S2 60 V 48 A 0.018 £2 TO-204 AE C67078-S1020-A3

RL-S1020

Abstract: S1020R RL-S1020OCAW RL-S1020RCBW RL-S1020SBRW RL-S1010 RL-S1010GDBW RL-S1010YCBW
Contextual Info: 1.0 Single Digit Display. Part Number: RL-S1010GDBW RL-S1020SBRW RL-S1010YCBW RL-S1020RCBW RL-S1020OCAW Features 1.LOW POWER CONSUMPTION. 2.RELIABLE AND RUGGED. 3.EXCELLENT UNIFORMITY OF LIGHT OUTPUT. 4.SUITABLE FOR LEVEL INDICATOR. 5.I.C COMPATIBLE. 6.LONG LIFE-SOLIDSTATE RELIABILTY.

Contextual Info: IMAGE SENSOR Back-thinned TDI-CCD S10200-02, S10201-04, S10202-08, S10202-16 Operating the back-thinned CCD in TDI mode delivers high sensitivity. TDI-CCD captures clear and bright images even under low-light-level conditions. During TDI mode, the CCD captures an image of a moving

S6025

Abstract: S1055M S8025 S4008 S0525 S4025 SCR S1055m S8055R S1070W S6020
Contextual Info: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U TO-92 TO-218AC TO-202AB TO-218X A THERMOTAB TO-220AB K G SCRs 1 – 70 Amps 6 General Description Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more

74F04

Abstract: DS1020 DS1020-100 DS1020-15 DS1020-200 DS1020-25 DS1020-50 DS1020S
Contextual Info: S1020 DALLAS s e m ic o n d u c t o r S1020 Programmable 8-Bit Silicon Delay Line FEATURES PIN ASSIGNMENT • All-silicon tim e delay IN • Models with 0.15 ns, 0.25 ns, 0.5 ns, 1 ns, and 2 ns steps 16 ] VCC 2 15 ] OUT Q/PO 3 14 ] P1 4 13 P2 5 12 E • Program m able using 3-wire serial port or 8-bit parallel