TESTING AMPLIFIER CIRCUIT Search Results

b 1492

Abstract: ISL7124SRH K500 LM124 cross reference lm124
Contextual Info: Single Event Effects Testing of the ISL7124SRH Quad Operational Amplifier June 2002 Purpose - This report describes the results of single event effects testing of the ISL7124SRH quad operational amplifier ‘op amp’ to determine whether this part meets

diode u1d

Abstract: "Pushbutton Switch" u1d diode MAX6816 "Pushbutton Switch" datasheet 4626 APP4626 MAX4403 MAX4403B AN4626
Contextual Info: Maxim > App Notes > Amplifier and Comparator Circuits Microprocessor Supervisor Circuits Keywords: IC testing, quad op amps, switch debouncers, pulse generators, serial programming Oct 21, 2009 APPLICATION NOTE 4626 Multiple-Pulse Generator Aids IC Testing

NORPS-12 LDR

Contextual Info: Application Note 1949 Total Dose Testing of the ISL70419SEH Radiation Hardened Quad Operational Amplifier Introduction This document reports the results of low and high dose rate total dose testing of the ISL70419SEH quad operational amplifier. The tests were conducted to provide an assessment

US18650G3

Abstract: us18650* specifications SONY us18650* specifications US18650 CCCV Charger Circuit 4.2V SONY BATTERIES PRODUCTS SAFETY PRODUCT us18650* chargers APP4322 MAX1737 MAX4163
Contextual Info: Maxim > App Notes > Amplifier and comparator circuits Battery management Power-supply circuits Keywords: Battery Emulator, simulated load, lithium-ion, li-ion, LI+, load testing, charger, fast charge Dec 10, 2008 APPLICATION NOTE 4322 Simplified lithium-ion Li+ battery-charger testing

us18650

Abstract: us18650* specifications US18650G3 battery charger 4,2v SONY BATTERIES PRODUCTS SAFETY PRODUCT us1865 charger APP4322 MAX1737 MAX4163
Contextual Info: Maxim > App Notes > Amplifier and Comparator Circuits Battery Management Power-Supply Circuits Keywords: Battery Emulator, simulated load, lithium-ion, li-ion, LI+, load testing, charger, fast charge Dec 10, 2008 APPLICATION NOTE 4322 Simplified Lithium-Ion Li+ Battery-Charger Testing

specification of ldr

Abstract: LDR SPECIFICATION LDR voltage range
Contextual Info: Application Note 1870 Author: Nick van Vonno Total Dose Testing of the ISL70444SEH Radiation Hardened Quad Operational Amplifier Introduction and Executive Summary This document reports the results of low and high dose rate total dose testing of the ISL70444SEH quad operational

Contextual Info: Application Note 1792 Author: Nick van Vonno Total Dose Testing of the ISL70417SEH Radiation Hardened Quad Operational Amplifier Introduction Part Description This document reports the results of low and high dose rate total dose testing of the ISL70417SEH quad operational

Keithley

Contextual Info: Number 2251 Application Note Series Testing RF Power Amplifiers with the Model 2306 Battery/Charger Simulator’s Pulse Current Step Function Introduction Typically, production testing of DC RF power amplifiers involves measuring RF power output and drive current consumption. During testing, the power amplifier is programmed to output a series of RF power levels, then load current measurements

M 9718

Abstract: OFDM USING FFT IFFT METHODS IFFT AN9718 HI5905 PAR/PDS3S140 PAR/DMG9N65CT PAR/AP13005 PAR/DF06S PAR/SF30JG-B
Contextual Info: Harris Semiconductor No. AN9718 Harris Telecom April 1997 Analog Amplifier Linearity Characterization via Probability Weighted Multitone Power Ratio Testing HI5905 Authors: Richard Roberts, Rodney Nelson Abstract 2.0 The DMT Waveform This application note discusses methodology for testing analog amplifiers designed to process DMT (discrete multitone)

IN4007

Abstract: IN4007 DATASHEET OPA660 IN4007 diode diode IN4007 description ordering information of IN4007 IN4007 maximum input voltage 14VPP IN4007 ordering information Diodes In4007
Contextual Info: DEM-OPA660-2GC EVALUATION FIXTURE FEATURES DESCRIPTION ● EASY AND FAST PERFORMANCE TESTING The Demo Fixture DEM-OPA660-2GC allows easy and fast performance testing of the OPA660AP in the current-feedback operational amplifier configuration. Figure 1 shows the diagram of the test fixture and

Chip Advanced Tech

Abstract: XP1006 XP1006 bonding
Contextual Info: XP1014-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features • XP1006 Driver Amplifier • 18.0 dB Small Signal Gain • +31.0 dBm Saturated Output Power • 35% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing

P1006BD

Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

tanaka gold wire

Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

sspa 14 ghz

Abstract: SSPA C Band 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier
Contextual Info: Solid State Power Amplifier Medium Power, Broadband Solid State RF Amplifier Aethercomm P/N SSPA-0.8-3.2-10 was designed to be used as a laboratory amplifier for all medium power testing needs from 800 MHz to 3.2 GHz. This SSPA can also be used in any application where

Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

P1014

Abstract: DM6030HK TS3332LD XP1006 XP1014 XP1014-BD-000V XP1006 bonding
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD August 2007 - Rev 03-Aug-07 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: Solid State Power Amplifier Medium Power, Broadband Solid State RF Amplifier Aethercomm P/N SSPA-0.6-2.0-20 was designed to be used as a laboratory amplifier for all medium power testing needs from 600 MHz to 2.0 GHz. This SSPA can also be used in any application where

xp1014

Abstract: P1014-BD
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD November 2008 - Rev 14-Nov-08 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

GAAS FET AMPLIFIER x-band 10w

Abstract: XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006-BD-000V
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

IN4007

Abstract: IN4007 DATASHEET IN4007 diode ordering information of IN4007 diode IN4007 description IN4007 maximum input voltage power supply IN4007 IN4007 ordering information diode IN4007 Diodes In4007
Contextual Info: DEM-OPA660-3GC EVALUATION FIXTURE FEATURES DESCRIPTION ● EASY AND FAST PERFORMANCE TESTING The Demo Fixture DEM-OPA660-3GC allows easy and fast performance testing of the OPA660AP building blocks OTA and buffer stage in the direct-feedback amplifier configuration. Figure 1 shows the diagram of the test fixture, while Figure 2 illustrates the

AA028P2-99

Contextual Info: 25–31 GHz Amplifier AA028P2-99 Features • 15 dB Gain ■ +16 dBm Output Power ■ Rugged, Reliable Package ■ Single Voltage Operation ■ 100% RF and DC Testing Description The AA028P2-99 is a broadband millimeterwave amplifier in a rugged package. The amplifier is designed for use in

"15 GHz" power amplifier 10 watt

Contextual Info: Solid State Power Amplifier Medium Power, Broadband Solid State RF Amplifier Aethercomm P/N SSPA 0.8-4.5-5.0 was designed to • 800 MHz to 4.5 GHz bandwidth be used as a laboratory amplifier for all medium • Low cost power testing needs from 800 MHz to 4.5 GHz. This

SSPA

Abstract: sspa 14 ghz
Contextual Info: Solid State Power Amplifier Medium Power, Broadband Solid State RF Amplifier Aethercomm P/N SSPA-0.8-4.5-5.0 was designed to • 800 MHz to 4.5 GHz Bandwidth be used as a laboratory amplifier for all medium • Low Cost power testing needs from 800 MHz to 4.5 GHz. This

XP1007

Abstract: power transistor mimix x-band x-band power transistor power transistor gaas x-band
Contextual Info: 8.7-10.7 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1007 Features Chip Device Layout X-Band 10W Power Amplifier 18.0 dB Small Signal Gain +40.0 dBm Saturated Output Power 32% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing