TELEDYNE CRYSTALONICS Search Results

Contextual Info: ÜCT 1 1 ‘390 WTELEDYNE COMPONENTS The capability of Teledyne Semiconductor, Philbrick, Crystalonics And m ore. TSC172 TSC173 BICMOS CURRENT MODE SMPS CONTROLLER FEATURES • Low Power BiCMOS Construction ■ Low Supply Current. 1.5 mA Typ

TSC18C

Contextual Info: NOV 1 8 199 ' PRELIMINARY INFORMATION WTELEDYNE COMPONENTS TSC18C42/3/4/5 TSC28C42/3/4/5 TSC38C42/3/4/5 The capability o f Teledyne Sem iconductor, Philbrick, Crystalonics A n d m ore. BiCMOS CURRENT MODE SMPS CONTROLLER Features • ■ ■ ■ ■ ■

2n6449

Contextual Info: TELEDYNE Eö E COMPONENTS Ö H T b a a D ÜQ Üfc.552 T -\ S HIGH VOLTAGE 1 2N6449 2N6450 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY 559 TO -39 Package • HIGH BVqss - • • 300V MIN 2N6449

Contextual Info: OCT 1 1 WTELEDYNE COMPONENTS TSC4435/6/7/8/9 TSC4455/6/7/8/9 TSC4465/6/7/8/9 TSC4485/6/7/8/9 The capability of Teledyne Semiconductor, Philbrick, Crystalonics And more. POWER LOGIC CMOS QUAD DRIVERS FEATURES APPLICATIONS • Tough CMOS Construction ■ Latchproof! Withstands 500 mA Inductive Kickback

Contextual Info: 5ÖE D TELEDYNE COMPONENTS. Ï ö T i v t i Q S □a ob beja 3 CHQ2907 PNP QUAD AMPLIFIER Ä S i §Ji§ JAN, JANTX, JANTXV General Purpose_ _ _pending PA CKA G E OUTLINE Four PNP Transistors Similar to 2N2907 M19500/558-01 CONNECTION DIAGRAM

to48c

Abstract: IC LA 4138 TO-48C LA 4138 2N2432A TELEDYNE
Contextual Info: TELEDYNE COMPONENTS aaE T - s r - i : 0T17bG2 GQObSfiH D D M ILITARY APPROVED LOW LEVEL - HIGH SPEED *2N2432 ‘ 2N2432A 2N4138 SILICON E PITA XIA L JUNCTION NPN SWITCHING TRANSISTORS * AVAILABLE AS JAN, JAN-TX, JAN-TXV, JAN-S GEOMETRY 485 E LEC T R IC A L DATA

fotofet

Abstract: FF413
Contextual Info: TELEDYNE EâE COMPONENTS D □□GbSTT 7 I — T - m ^ i f lW b G E FOTOFET SILICON E PITA XIA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR FF413 GEOMETRY 446 • HIGH SENSITIVITY • LOW DARK CURRENT • FAST RESPONSE • LOW R on • FLAT GLASS TOP FOR EXTERNAL OPTICS

Y446

Abstract: CP643
Contextual Info: 2öE D TELEDYNE COMPONENTS m 0^171,02 ÜOQbSbl T T~3 hSiS POW RFET SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR CP643 GEO M ETR Y 446 • FOR HIGH DYNAMIC RANGE R.F. AMPLIFIERS • SPECIFIED FOR H.F. BAND - USEABLE THRU 500 MHz • LOW NOISE FIGURE DIRECT FROM 50 Ohm LINE2

2N3866

Abstract: CFO20 teledyne 2n3867 2N3868 teledyne fet
Contextual Info: TELEDYNE C011P0NENTS ù ì l T t i Q S GGQbS37 S 2ÖE D r-3 -i-i-i I PNP 3 AMP 2N3867 2N3868 2N6303 POWER TRANSISTORS GEOMETRY 505 • HIGH SPEED • VCEO sus to 80V • HIGH fT MAXIMUM RATINGS PARAMETER SYMBOL 2N3867 2N3868 2NÓ303 UNIT Collector Emitter Voltage

2N4447

Abstract: 2N4448 2N4445 4446 2N4446 Scans-0080321
Contextual Info: Ü T1 7 bQ S HflE D TELEDYNE COMPONENTS GQQtaS4? 5 ULTRA LOW Ro n SWITCHING 2N4445 thru 2N4448 SILICON EPITA XIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY 448-1 .230 MAX. .185 ±.005' • LOW R ds - 4 Ohms TYPICAL • LOW CQD - 15 pfd TYPICAL • HIGH l DSS - 400mA TYPICAL

3n123

Contextual Info: TELEDYNE COMPONENTS SÖE aT17bQ5 D □QQf c. STS S r ~'07-'d3 3N134 3N135 3N136 LOWree sat SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTORS G E O M E T R Y 45 0 • • • • U LTRA LOW ree(sat), 10 S2 TYP. LOW LEAKAGE, 2 na TYP. L 0 W C flb,3pfdTYP.

VA723

Abstract: VA521 Crystalonics PI tuning 100J VA522 VA523 VA621 teledyne crystalonics VA521-824
Contextual Info: 0 T 1 7 t,0 E EÖE D TELEDYNE COMPONENTS üGObbbb 2 Mi T -O -T -/< ? HIGH Q - HIGH CAPACITANCE V A 5 2 1-8 2 4 SILICON EPITAXIAL VARACTRON VOLTAGE-VARI ABLE CAPACITANCE DIODES GEOMETRY 417 VA521 -524 GEOMETRY 423 (VA621 -624) GEOMETRY 418 (VA624-824) • A LL E P IT A X IA L

ferroxcube 1041T060

Abstract: CP666 1041T060 teledyne transistor teledyne fet u
Contextual Info: TELEDYNE COMPONENTS SäE ' T - I l - £ ? ûTiTtoa aoûtss^ 1 D BROADBAND RF FET SILICO N E P IT A X IA L JUNCTION N -C H A N N E L F IE L D EFFECT TRANSISTOR GEOMETRY 424 HIGH DYNAMIC RANGE HF AND VHF AMPLIFIER FOR USE IN COMMON GATE CONFIGURATION • USABLE TO OVER 300 MHz

FF412

Contextual Info: TELEDYNE COMPONENTS 5âE D 0^17^02 QGÜb57Ô 5 •' - T * m - b \ FO TOFET FF412 SILICO N E P IT A X IA L JUNCTION N -CHANNEL FIELD EFFECT TRA N SIST O R G E O M E T R Y 446 • HIGH SENSITIVITY • LOW D A R K CURRENT • FAST RESPONSE • LOW Rqn

2N5432

Contextual Info: r ö^lTbOa üQQt.S4e} T 2ÖE D TELEDYNE COMPONENTS ULTRA LOW RON SWITCHING r - z 2N 5433 2N 5434 GEOMETRY 501 .230 M A X . .199 M A X . LOW R d s - 5 Ohms L O W C q d - 1 5 pfd JL a bso lu te m a x im u m PARAM ETER r a t in g s U N IT S SYM BO L D ra in to G ate V oltag e

IN5139

Abstract: VA5139 VA5139A VA5140 VA5140A VA5141 VA5141A VA5143 VA5143A VAS142A
Contextual Info: TELEDYNE COMPONENTS » B6£ 0^17^05 üGObbbñ k HIGH Q VA5139 Thru VA5143 . S IL IC O N V A R A C T R O N V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S GEOMETRY 415 ♦ Q@ —4V to 350 • 90 VOLT BREAKDOWN MINIMUM MECHANICAL DATA D O -7 P A C K A G E

VA-201

Abstract: teledyne crystalonics VA312 VA-200 VA-202 VA-203 VA-204 VA-205 VA-206 VA-207
Contextual Info: TELEDYNE ! m EÛE D COMPONENTS a=ilT b Q e OClQbbUa ? • -T-0“7-/9 H IG H V O L T A G E - H I Q | VARACTRON V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S VA200-213 GEOMETRY 415 • ALL EPITAXIAL C O N S TR U C TIO N P + N N + • 1SO V O LTS DC RATING (M W V )

33AS9

Abstract: 33B1 teledyne crystalonics CV166S CV830 CV831 CV832 CV833 CV834 CV835
Contextual Info: öTlTbDE QÜObbSS a M L 2ñE D TELEDYNE COMPONENTS ~ T - £ n - ÍT * CV830 thru CV840 V O L T A G E - V A R IA B L E - C A P A C IT A N C E D IO D E S S IL IC O N P A S S IV A T E D CV 830 Series replaces M V830 Series GEOMETRY 415 S IL IC O N V O L T A G E - V A R IA B L E - C A P A C IT A N C E D IO D E S

Contextual Info: PRELIMINARY INFORMATION TSC176 TSC177 TSC15C25A TSC15C27A TSC25C25A TSC25C27A TSC35C25A TSC35C27A WTELEDYNE COMPONENTS The capability of Teiedyne Semiconductor, Philbrick, Crystalonics And more. BiCMOS PWM CONTROLLERS Features • ■ ■ ■ ■ ■ ■

CAG48

Abstract: SPDT FETs Crystalonics 2N5066 dpdt mechanical relays 3v 2N3677 CAG30 CDA28 CDA29 CS4R101A
Contextual Info: H IG H L IG H T S CH-2 These circuits represent the best of combined Monolithic and Hybrid technology. Each uses a specially de­ signed Crystalonics monolithic circuit which interfaces with standard logic and drives discrete chip switching trarrsistors. While the monolithic circuit keeps size and cost to a minimum, the discrete output

TELEDYNE PHILBRICK

Abstract: Teledyne Semiconductor amelco TELEDYNE PHILBRICK V to F VOLTAGE TO FREQUENCY CONVERTER TELEDYNE TELEDYNE PHILBRICK converter philbrick TELEDYNE PHILBRICK f to v teledyne converters TelCom Semiconductor
Contextual Info: , Company Profile 1300 Terra Bella Avenue Mountain View, CA 94043-1836 TelCom Semiconductor, Inc. Company Profile THE COMPANY TelCom Semiconductor, Inc. designs and manufactures analog and mixed signal integrated circuits in five principal product families: thermal management,

lc 7132

Abstract: teledyne crystalonics 16-JE Crystalonics 2N3677 2N5066 CSR301 teledyn teledyne digital teledyne transistor
Contextual Info: D IG IT A L HIGH LEVEL D R IV E R • D IG ITA L HIGH LEVEL DRIVER FOR USE IN LAMP DRIVER AND RELAY DRIVER APPLICATION 0.200 MAX 0 .2 8 0 0 .2 2 0 Vcc 16 15 14 13 12 II 10 9 • j 1 16 n > < E 2 15 > j < E 3 14 n > 4 13 n > < L < L < E < E 5 12 > j 6 11 >

Crystalonics CAG49

Abstract: teledyne crystalonics CAG-49
Contextual Info: • QUAD • LOW ON RESISTANCE, 35 OHMS T Y P IC A L • ton 20 NANO SECONDS M A X . MAXIMUM RATINGS SYMBOL MIN. TYP. MAX. UNITS Operating Temperature Top -55 - +125 °C Storage Temperature Tstg -55 - +150 °C I d on - 15 mA Positive Supply Voltage Vcc -

SAMPLE HOLD AMPLIFIER single supply

Abstract: rf module cs500 2N3677 2N5066 CSH101A teledyne crystalonics
Contextual Info: UNIVERSAL ANALOG MODULE ESPECIALLY FOR CSH101A SAMPLE AND HOLD • • • • • • ± 1 0 V I NP UT RA N GE LOGIC C O MP AT IB LE C O N T R O L SI NGLE O F F S E T A D J U S T M E N T S H O R T C I R C U I T PROOF 10/iS A C Q U I S I T I O N T I M E PROVI SI ON FOR S W I T C H I N G C H A R G E C A N C E L L A T I O N