33B1 Search Results

Contextual Info: 1S1832 TOSHIBA Rectifier Silicon Diffused Type 1S1832 High-Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.7 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 1800 V • Reverse Recovery Time: trr = 6.0 µs •

Contextual Info: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B,S5295G,S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V

1S188

Contextual Info: 1S1885A,1S1887A,1S1888A TOSHIBA Rectifiers Silicon Diffused Type 1S1885A,1S1887A,1S1888A General Purpose Rectifier Applications • Unit: mm Average Forward Current: IF AV = 1.2 A (Ta = 60°C) • Repetitive Peak Reverse Voltage: VRRM = 100 V, 400 V, 600 V

Z6 ZENER DIODE

Abstract: Z6 DIODE LZ13A 2-1Z390 21Z3 zener diode IN 825 1Z18A zener diode si 18 LZ6.8 z390
Contextual Info: TOSHIBA 1Z 6 . 2 - 1Z390,1Z 6 . 8 A - 1Z30A TO SHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2-1Z390, 1 Z 6.8 A -1Z 3 0 A CONSTANT VOLTAGE REGULATION Unit in mm TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation :

Contextual Info: 1S1832 T O SH IB A TO SHIBA RECTIFIER SILICON DIFFUSED TYPE 1 S 1 832 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • • • • Average Forward Current : Ip (AV)= 0.7A Repetitive Peak ReverseVoltage : V r rm = 1800V Reverse Recovery Time

Contextual Info: PM-7524/883 CMOS 8-BIT BUFFERED MULTIPLYING D/A CONVERTER P r e c i s i o n M o n o l i t h i c s Inc. 1.0 SCOPE This specification covers the detail requirements for an 8-bit buffered monolithic multiplying CMOS digital-to-analog converter. The internal latches provide direct interface to most

S5295B

Contextual Info: TO SH IBA S5295B,S5295G,S5295J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE S5295B, S5295G, S5295J Unit in mm HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time

Contextual Info: TOSHIBA 1S 18 29 JS1886 TO SHIBA RECTIFIER • « v ■ «p SILICON DIFFUSED TYPE i u « r • Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS • • • Average Forward Current : If a .V = 1-0A (Ta = 65°C) Repetitive Peak Reverse Voltage : V r r ]V[ = 200, 800V

Toshiba flash

Abstract: Toshiba rectifier 1S1832
Contextual Info: 1S1832 TOSHIBA Rectifier Silicon Diffused Type 1S1832 High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.7 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 1800 V • Reverse Recovery Time: trr = 6.0 µs •

BA41-00727A

Abstract: LE88CLGM 82801 hbm IDTCV179 20D2G q231 samsung lcd tv power supply schematic NH82801HEM NB8M-SE RB1 Wlan Cardbus
Contextual Info: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D TORINO 2 g n l u a s i t m

Q8031

Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED

SLB9635TT12

Abstract: SLB9635TT1.2 32 inch TV samsung lcd Schematic fairchild diode smd code aa35 SC454 slb9635 BA41-00905A 20B3 diode BA09-00009A B503 F
Contextual Info: SENS X360 A B C D 4 SAMSUNG PROPRIETARY 3 4 HJ KIM Jun PARK T.R. Date 3 JS EUH APPROVAL : Dev. Step Revision CHECK BA41-00906A GCE : PR/MP : 1.1 DRAW Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page.

DIODE 22B4

Abstract: BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4
Contextual Info: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision APPROVAL AQUILA MAIN BA92-01774A BA41-#####A SR 1.0 CHECK : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams

RTL8211E

Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

1S1885

Abstract: 1S1888 1S1830 1S1887
Contextual Info: 1S1830,1S1885,1S1887,1S1888 TOSHIBA Rectifier Silicon Diffused Type 1S1830, 1S1885, 1S1887, 1S1888 General Purpose Rectifier Applications • • Unit: mm Average Forward Current: IF AV = 1.0 A (Ta = 65°C) Repetitive Peak Reverse Voltage: VRRM = 100 V, 400 V, 600 V, 1000 V

S5295G

Contextual Info: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B,S5295G,S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V

PHILIPS toroidal core 2P80

Abstract: PHILIPS toroidal core 3c90 push-pull converter design Philips Components, Soft Ferrites 3C11 philips 3e1 ferrite material PHILIPS toroidal core 4a11 ETD29-3C90 smd marking 330 e71 ETD59-3F3 philips 4b1 ferrite rod
Contextual Info: Soft Ferrites and Accessories Contents Introduction Quality Environmental aspects of soft ferrites Ordering information Applications Literature and reference publications Ferrite materials survey and specifications - Ferrite materials survey - Material specifications and graphs

E71/33/32-3C90

Abstract: 43120203664 philips rm8 3C85 a250 P14/8-3H1-A315/N 3C80 philips 4330-030-3779 EC35-3c8 ETD29-3C85 P22/13-3B7 ETD34 3C80
Contextual Info: MAIN MAIN MENU MENU CONVERSION LIST Philips Components Conversion list Type number to 11NC Conversion list type number to 11NC Product status definitions STATUS INDICATION DEFINITION Prototype PROT These are products that have been made as development samples for the purposes of

Contextual Info: 1S1832 TOSHIBA Rectifier Silicon Diffused Type 1S1832 High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.7 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 1800 V • Reverse Recovery Time: trr = 6.0 µs •

1S1835

Contextual Info: 1S1834,1S1835 TOSHIBA Rectifier Silicon Diffused Type 1S1834,1S1835 High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 1.0 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 400, 600 V • Reverse Recovery Time: trr (1) = 1.5 µs

DD15

Contextual Info: Unit: nn 3-3B1A o +i m TQ. Nane JEDEC JE][TA T o s h ib a D iscrete Senlconductor Integrateci Circuit DD-15 DD-15 S C -3 9 3-3B1A — May 2005

TRANSISTOR SUBSTITUTION 1993

Abstract: DHO 165 DV 413 infineon catalog nfc antenna PCT 4111 B70B5 atx power supply 66b9
Contextual Info: P re li m i n a r y D a t a S h e e t , D S 1 , D e c . 2 0 0 0 IWORX Interworking Controller P X B 4 2 2 5 V er s i o n 1 . 1 w it h Fi r m w a r e R e l e a s e 1 . 1 -1 . 1 . 1 Datacom N e v e r s t o p t h i n k i n g . GLWLRQ  3XEOLVKHG E\ ,QILQHRQ 7HFKQRORJLHV $*

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

S5295G

Abstract: S5295B S5295J 95J DIODE TOSHIBA
Contextual Info: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B,S5295G,S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V