TECH MOS TECHNOLOGY Search Results

cecc32101-801

Abstract: cecc32101801 CECC32101 CERAMIC CHIP CAPACITORS temex W CECC32101-801 specification 5KR11 CERAMIC CHIP CAPACITORS temex W 2C1 bx chb temex
Contextual Info: CERAMIC & MOS CAPACITORS Contents CERAMIC & MOS CAPACITORS CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE GENERAL INFORMATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6-2 All specifications contained in that catalog are subject to change without notice.

Contextual Info: f Z 7 SGS-THOMSON TECHNICAL NOTE AN INTRODUCTION TO POWER MOS A POWER MOS transistor is a power transistor pro­ duced with MOS, and not the usual bipolar tech­ nology. Special characteristics are high switching speeds and easy driving. This introductory note describes

Contextual Info: rz T SGS-THOMSON *•7#. ¡»mmgsraraofss TECHNICAL NOTE AN INTRODUCTION TO POWER MOS A POWER MOS transistor is a power transistor pro­ duced with MOS, and not the usual bipolar tech­ nology. Special characteristics are high switching speeds and easy driving. This introductory note describes

Contextual Info: GENERAL INFORMATION POWER MOS devices are made using well proven SGS-THOMSON technology. POWER MOS tech­ nology stands, with equal stature, firmly alongsi­ de the company’s POWER BIPOLAR technologies. This DATABOOK has been produced to comple­ ment the advances in silicon technology and iso­

VDMOS

Abstract: VDMOS DEVICE
Contextual Info: /T T SGS-THOMSON ^ 7 Ê R Æ O iS ^ O ilL tlÊ iri^ lS ^ D Ê S TECHNICAL NOTE EVOLUTION OF POWER MOS TRANSISTORS The vertical double diffused MOS silicon gate tech­ nology represents the final evolution of the deve­ lopment of a process to obtain POWER MOS

VDMOS DEVICE

Contextual Info: S G S -T H O M S O N itLKSTTMIiÎODÊS TECHNICAL NOTE EVOLUTION OF POWER MOS TRANSISTORS The vertical double diffused MOS silicon gate tech­ nology represents the final evolution of the deve­ lopment of a process to obtain POWER MOS devices, started in SGS in 1977.

IRFP450FI

Abstract: IRF540FI ISOWATT221 Tech MOS Technology STLT20FI
Contextual Info: GENERAL INFORMATION The Power M OS devices presented in this databook are made using well proven SGS-THOMSON tech­ nology. SGS-THO MSO N Power MOS technology stands, with equal stature, firmly alongside the com pany's wide range of devices in Power BIPOLAR and

Contextual Info: GENERAL INFORMATION POW ER MOS devices are made using well proven SG S-THO M SO N technology. POW ER M OS tech­ nology stands, with equal stature, firmly alongsi­ de the company’s POWER BIPOLAR technologies. This DATABOOK has been produced to comple­

Tech MOS Technology

Abstract: 27BSC
Contextual Info: Tech MOS Technology E 0.015X45º SOP-8 Packaging Outline H e2 e1 D A1 A C L 0.004max. SYMBOLS Millimeters Inches MIN. Nom. MAX. MIN. Nom. MAX. A 1.35 1.55 1.75 0.053 0.061 0.069 A1 0.10 0.17 0.25 0.004 0.007 0.010 C 0.18 0.22 0.25 0.007 0.009 0.010 D 4.80

Contextual Info: CD74FCT651, CD74FCT652 Data sheet acquired from Harris Semiconductor SCHS262 D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C • CD74FCT652 - Noninverting • Family Features - SCR Latchup Resistant BiCMOS Process and Circuit Design

Contextual Info: CD74FCT651, CD74FCT652 Data sheet acquired from Harris Semiconductor SCHS262 D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C • CD74FCT652 - Noninverting • Family Features - SCR Latchup Resistant BiCMOS Process and Circuit Design

CD74FCT651

Abstract: CD74FCT651EN CD74FCT651M CD74FCT652 CD74FCT652EN CD74FCT652M
Contextual Info: CD74FCT651, CD74FCT652 Data sheet acquired from Harris Semiconductor SCHS262 D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C • CD74FCT652 - Noninverting • Family Features - SCR Latchup Resistant BiCMOS Process and Circuit Design

Contextual Info: CD74FCT651, CD74FCT652 Data sheet acquired from Harris Semiconductor SCHS262 D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C • CD74FCT652 - Noninverting • Family Features - SCR Latchup Resistant BiCMOS Process and Circuit Design

Contextual Info: CD74FCT651, CD74FCT652 Data sheet acquired from Harris Semiconductor SCHS262 D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C • CD74FCT652 - Noninverting • Family Features - SCR Latchup Resistant BiCMOS Process and Circuit Design

CD74FCT651

Abstract: CD74FCT651EN CD74FCT651M CD74FCT652 CD74FCT652EN CD74FCT652M SCHS262
Contextual Info: CD74FCT651, CD74FCT652 Data sheet acquired from Harris Semiconductor SCHS262 D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C • CD74FCT652 - Noninverting • Family Features - SCR Latchup Resistant BiCMOS Process and Circuit Design

CD74FCT541* harris

Abstract: CD74FCT540 CD74FCT540E CD74FCT540M CD74FCT541 CD74FCT541E CD74FCT541M CD74FCT541SM
Contextual Info: Data sheet acquired from Harris Semiconductor SCHS257 D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C • Buffered Inputs • Typical Propagation Delay: 6.4ns at VCC = 5V, TA = 25oC, CL = 50pF • CD74FCT540 - Inverting

VL2793PC

Abstract: vl2797 fd1771 floppy stepping motor diagram VL2797PC VL2797CC FD-179x
Contextual Info: V L S I Tech nology , in c . VL2793 • VL2797 FLOPPY DISK FORMATTER/ CONTROLLER FAMILY FEATURES DESCRIPTION • On-chip PLL data separator • Soft sector format compatibility The VL279X are N-Channel Silicon Gate MOS LSI devices which perform the functions of a Floppy Disk Format­

CD74FCT564

Abstract: SCHS259 CD74FCT564E CD74FCT564M CD74FCT574 CD74FCT574E CD74FCT574M CD74FCT574SM
Contextual Info: CD74FCT564, CD74FCT574 Data sheet acquired from Harris Semiconductor SCHS259 D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C • Buffered Inputs • Typical Propagation Delay: 5.6ns at VCC = 5V, TA = 25oC • Positive Edge Triggered

HARRIS PACKAGE LOGIC FCT

Abstract: CD74FCT843A CD74FCT843AM CD74FCT844A CD74FCT844AEN
Contextual Info: CD74FCT843A, CD74FCT844A Data sheet acquired from Harris Semiconductor SCHS267 BiCMOS FCT Interface Logic, 9-Bit Transparent Latches, Three-State D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C Circuit Design Speed of Bipolar FAST /AS/S

CD74FCT861A

Contextual Info: CD74FCT861A Data sheet acquired from Harris Semiconductor SCHS268 January 1997 Features BiCMOS FCT Interface Logic, 10-Bit Bus Transceiver, Three-State D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR MOS Use C • Buffered Inputs • Typical Propagation Delay: 6.0ns at VCC = 5V,

CD74FCT861A

Contextual Info: CD74FCT861A Data sheet acquired from Harris Semiconductor SCHS268 January 1997 Features BiCMOS FCT Interface Logic, 10-Bit Bus Transceiver, Three-State D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR MOS Use C • Buffered Inputs • Typical Propagation Delay: 6.0ns at VCC = 5V,

CD74FCT861A

Abstract: CD74FCT861AM
Contextual Info: CD74FCT861A Data sheet acquired from Harris Semiconductor SCHS268 January 1997 Features BiCMOS FCT Interface Logic, 10-Bit Bus Transceiver, Three-State D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR MOS Use C • Buffered Inputs • Typical Propagation Delay: 6.0ns at VCC = 5V,

CD74FCT861A

Contextual Info: CD74FCT861A Data sheet acquired from Harris Semiconductor SCHS268 January 1997 Features BiCMOS FCT Interface Logic, 10-Bit Bus Transceiver, Three-State D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR MOS Use C • Buffered Inputs • Typical Propagation Delay: 6.0ns at VCC = 5V,

CD74FCT861A

Abstract: CD74FCT861AM CD74FCT861AM96
Contextual Info: CD74FCT861A Data sheet acquired from Harris Semiconductor SCHS268 January 1997 Features BiCMOS FCT Interface Logic, 10-Bit Bus Transceiver, Three-State D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR MOS Use C • Buffered Inputs • Typical Propagation Delay: 6.0ns at VCC = 5V,