TDT724 Search Results

TC528257

Abstract: n724
Contextual Info: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS multiport m em ory equipped with a 262,144-w ords by 8 -bits dynam ic random access m em ory RAM port and a 512-words by 8 -bits static serial access m emory (SA M ) port. The

Contextual Info: TOSHIBA TC55B4256J-12/15/20 SILICON GATE BiCMOS 262,144 WORD x 4 BIT BiCMOS STATIC RAM Description The TC55B4256J is a 1,048,576 bit high speed BiCMOS static random access memory organized as 262,144 words by 4 bits and operated from a single 5V supply. Toshiba’s BiCMOS technology and advanced circuit design enable high speed operation.

Contextual Info: Technical Data Silicon Monolithic Bipolar Digital Integrated Circuit TD62783AP/AF TD62784AP/AF 8-channel High-Voltage Source Driver The TD62783AP/AF Series drivers are composed of eight source current Transistor Arays. These drivers are specifically designed for fluoBScent

Contextual Info: TOSHIBA INTELLIGENT GTR MODULE MIG30J103H High Power Switching Applications Motor Control Applications • Intelligent GTR Module that Include IGBT drive circuits, overcurrent, undervoltage lockout, and overtemperature protection. • The Electrodes areIsolated from case.

Contextual Info: TOSHIBA INTELLIGENT GTR MODULE MIG100Q201H PRELIMINARY High Power Switching Applications Motor Control Applications • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.

TC551664J

Contextual Info: TOSHIBA TC551664J-15/20/25 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC551664J is a 1.048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.

I-355

Contextual Info: INTEGRATED TO SHIBA QUAD CIRCUIT TECHNICAL 2 - INPUT NOR TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74AC02P/F/FN/FS DATA SILICON MONOLITHIC GATE The TC74AC02 is an advanced high speed CMOS 2-INPUT NOR GATE fabricated with silicon gate and double - layer metal wiring C2MOS technology.

Contextual Info: TOSHIBA TC55BS8125J-10/12 PRELIMINARY 131,072 WORD x 8 BIT SYNCHRONOUS STATIC RAM with Input Registers and Output Registers Description The TC55BS8125J is a 1,048,576 bit synchronous static random access memory fabricated using BiCMOS technology and organized as 131,072 w ords by 8 bits. The TC55BS8125J is similar to the TC55BS8128J but has common data I/O lines and

TC55257

Abstract: tc51832fl-10 tc51832fl 128X8 A12C TC51832 TC51832F TC51832P TC51832PL-10 TC51832SPL-10
Contextual Info: ,_ J TOS H IB A : _ L O G I C / M E M O R Y 4SE D • llg r iHii ^0^7246 D025D11 32,768 WORD x 8 BIT CMOS PSEUDO STATIC RAM □ ■TOSS* - - iDESCRIPTIONl The TC51832 Family is a 256K bit high-speed CMOS Pseudo-Static RAM organized as 32,768

tc528257

Abstract: W640 SFC39 DIN 41162
Contextual Info: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS m ultiport m em ory equipped with a 262,144-words by 8 -bits dynam ic random access mem ory RAM port and a 512-words by 8 -bits static serial access memory (SA M ) port. The

TCFT 1103

Abstract: TC5116400J A173 TC511640J A10RC TCWU
Contextual Info: TOSHIBA TC5116400J/FT -60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5116400J/FT is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400J/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

TA7273P

Abstract: TA7273
Contextual Info: TOSHIBA-. ELECTRONIC 02 9097247 TOSHIBA. \ ÍT~| □□lkcH 7 b 0 2E 16997 D . — - T - 7 y - o j- o i ELECTRONIC TA7273P DUAL AUDIO POWER AMPLIFIER Unit in mm ia7±as The TA7273P is dual audio power amplifier for 4.3MAX 7.6+Q3 consumer applications. This IC provides an output power of 13 watts

ZIP20-P-400A

Abstract: toshiba a75 TSOP26-P-300 TC514400ASJ
Contextual Info: 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION THE TC514400ASJ/AZ/AFT is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC514400ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced

Contextual Info: TO SH IBA MIG75Q202H TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT MIG75Q202H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units

Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74LVQ74F, TC74LVQ74FN, TC74LVQ74FS DATA SILICON MONOLITHIC DUAL D-TYPE FLIP FLOP WITH PRESET AND CLEAR The TC74LVQ74 is a high speed CMOS D-FUP FLOP TC74LVQ74F fabricated with silicon gate and double-layer metal

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC554161FTL-70L/85L PRELIMINARY SILICON GATE CMOS 262,144 WORD x 16 BIT STATIC RAM Description TheTC554161FTL is a 4,194,304 bit static random access memory organized as 262,144 words by 16 bits using CMOS technol­ ogy, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features

transistor 6bw

Abstract: DLA DIODE TOSHIBA
Contextual Info: » » INTEGRATED TOSHIBA CIRCUIT TECHNICAL lU b H IBA TA7805F, TA7809F, TA7818F, DATA blPULMn LiNcMn ii^ 1cortM i c u TA78057F, TA7806F, TA7808F TA7810F, TA7812F, TA7815F TA7820F, TA7824F SILICON MONOLITHIC i THREE TERMINAL POSITIVE VOLTAGE REGULATORS 5V, 5.7V, 6V, 8V, 9V, 10V, 12V, 15V, 18V, 20V, 24V

Contextual Info: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC55V2325FF -7 DATA SILICON GATE CMOS TENTATIVE 65,536 WORD x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V2325FF is a 2.097,152 bit synchronous pipelined burst SRAM that is organized as 65,536

Contextual Info: TO SHIBA TC74VHC153F/FN/FS/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC153F, TC74VHC153FN, TC74VHC153FS, TC74VHC153FT DUAL 4 -CHANNEL MULTIPLEXER The TC74VHC153 is an advanced high speed CMOS DUAL 4-CHANNEL MULTIPLEXERS fabricated with silicon gate

Contextual Info: TOSHIBA 1 C10CI7247 0 0 2 1 4 0 ^ 40b • POWER GaAs MM 1C MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD0708-2 Features* ■ HIGH POWER ■ BROAD BAND INTERNALLY MATCHED PldB= 33 dBm at 7.1 to 8. 5 GHz ■ HIGH GAIN ■ HERMETICALLY SEALED PACKAGE GldB= 22 dB at 7. 1 to 8.5 GHz

Contextual Info: T O S H IB A TC74VH C11F/FN/FS/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC11F, TC74VHC11FN, TC74VHC11FS, TC74VHC11FT TRIPLE 3 -INPUT AND GATE The TC74VHC11 is an advanced high speed CMOS 3-INPUT AND GATE fabricated with silicon gate C2MOS technology.

Contextual Info: TOSHIBA TC55B465P/J-10/12 SILICON GATE BiCMOS 65,536 WORD x 4 BIT BiCMOS STATIC RAM Description The TC55B465P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 65,536 words by 4 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.

Contextual Info: TOSHIBA TC75S57F TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC75S57F SINGLE COMPARATOR TC75S57F is a CMOS type general-purpose single comparator capable of single power supply operation and using lower supply currents than the conventional bipolar

Contextual Info: TO 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION THE TC514400ASJ/AZ/AFT is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC514400ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced