TC55BS8128J Search Results

Contextual Info: TOSHIBA TC55BS8125J-10/12 PRELIMINARY 131,072 WORD x 8 BIT SYNCHRONOUS STATIC RAM with Input Registers and Output Registers Description The TC55BS8125J is a 1,048,576 bit synchronous static random access memory fabricated using BiCMOS technology and organized as 131,072 w ords by 8 bits. The TC55BS8125J is similar to the TC55BS8128J but has common data I/O lines and

Contextual Info: TOSHIBA TC55BS8128J-10/12 PRELIM INARY 131,072 WORD x 8 BIT SYNCHRONOUS STATIC RAM with Input Registers, Output Registers and Pass-Through Feature Description The TC55BS8128J is a 1,048,576 bit synchronous static random access memory fabricated using BiCMOS technology and

Contextual Info: TOSHIBA TC55BS8128J-10/12 P R E L IM IN A R Y 131,072 WORD x 8 BIT SYNCHRONOUS STATIC RAM with Input Registers, Output Registers and Pass-Through Feature D e s c rip tio n The TC55BS8128J is a 1,048,576 bit synchronous static random access memory fabricated using BiCMOS technology and

es 7240

Abstract: SOJ40-P-400 A15C TC55BS8128J-10 TC55BS8128J-12
Contextual Info: TOSHIBA TC55BS8128J-10/12 P R E L IM IN A R Y 131,072 WORD x 8 BIT SYNCHRONOUS STATIC RAM w ith Input Registers, O utput Registers and P ass-Through Feature D e s c rip tio n T h e T C 5 5 B S 8 1 2 8 J is a 1 ,0 4 8 ,5 7 6 bit s ynch rono us sta tic ra n d o m acce ss m e m o ry fab ricate d using B iC M O S te ch n o lo g y and

TC55B4257

Abstract: TC551664J-20
Contextual Info: X6 Capacity 288KBit Type No. Organization 15 15 TC55329AP/AJ-20 20 20 TC55329AP/AJ-25 25 25 TC56329AP/AJ-35 32,768 x 9 35 35 TC55B329P/J-10 10 10 TC55B329P/J-12 12 12 TC55B329P/J-15 15 15 20 20 25 25 TC551632J-36 35 35 TC5SB4256J-12 12 12 TC55B4256J-15 15