TCAC15 Search Results

4A04I

Abstract: tc514100a
Contextual Info: TC51441OAP/AJ/ASJ/AZ—70, TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 PRELIMINARY 1,048,576 W ORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC51441 OAP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

TC51V16405

Abstract: TC51V16405c
Contextual Info: INTEGRATED TOSHIBA " O S H I B A MOS DIGITAL I NT EGR AT ED CIRCUIT ” 51 V 16405 C5JS CST5 - SO TCS1V1c405 CSJ S/CSTS- 60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 W O RD x 4 BIT FAST PAGE DYNAM IC RAM DESCRIPTION The TC51V16405CSJS/CSTS is fast page dynamic RAM organized 4,194,304 words by 4 bits. The

v801

Abstract: tc5165165
Contextual Info: T O SH IB A THM72V8015ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

tc51100ap

Abstract: DIP18-P-300E TC514100
Contextual Info: 4,1 94 ,3 0 4 W O R D X PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC514100AF/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: THM73V8015ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

TC514256

Contextual Info: 524,288 W O RD S x 40 BIT D Y N A M IC RAM M O D U LE DESCRIPTION The THM405120ASG/BSG is a 524,288 words by 40 bits dynamic RAM m odule which assem bled 20 pcs o f TC514256AJ/BJ on the printed circuit board. The THM405120ASG/BSG is optim ized for application to the system s which are required high density

Contextual Info: TOSHIBA THL64V4075ATG-4,-5,-4S,-5S TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THL64V4075ATG is a 4,194,304-word by 64-bit dynamic RAM module consisting of four TC5165165AFT/AFTS DRAMs on a printed circuit board. This module is optimized for applications

MSM5416283-60

Abstract: MSM5416283 SAM256
Contextual Info: O KI Semiconductor MSM5416283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

Contextual Info: T O S H IB A INTEGRATED CIRCUIT D IG IT A L IN T E G R A T E D T C 5 2 3 1 2 5 A ? / A J - 10 T O S H IB A TECHNICAL DATA S IL IC O N GATc C S C JIT , T C 5 2 8 1 2 S A ? / A J - 12 CM O S P R E L IM IN A R Y 131 , Q72 W O R D S x SB II S M U L T iP O R T D R A M

Contextual Info: 1 0 4 8 ,5 7 6 W O R D x 4 BIT DYNAM IC RAM * This is advanced information and specifica­ tions are subject to change without notice. D ESC R IP T IO N The T C 514402A P /A J/A SJ/A Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The T C 514402A P /A J/A SJ/A Z utilizes TO SH IBA ’S CMOS Silicon gate process technology as well as

Contextual Info: TOSHIBA LOGIC/MEMORY 4,194,304 W O R D X 42E » ^ 7 2 4 0 0 Q 2 0 ci7b T B 1 T 0 S 2 PRELIMINARY 1 "BIT D Y N A M IC R A M 7 - ji. - 2 3 - lS r DESCRIPTION The TC514100AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC51V16400 CSJ / CST - 50 TC51V16400 CSJ / CST -60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304-WORD BY 4-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC51V16400CSJ/CST is a fast page dynamic RAM organized as 4,194,304 words by 4 bits. Fabricated

Contextual Info: 1 0 4 8 ,5 7 6 W O R D x PRELIMINARY 4 BIT D Y N A M IC R A M DESCRIPTION The TC514402AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: TENTATIVE DATA 262,144 W O R D x 4 BIT D YN AM IC RAM DESCRIPTION The TC514266AP/AJ/AZ is the new generation dynam ic R A M organized 262,144 words b y 4 bits. The TC514266AP/AJ/AZ utilizes T O S H IB A ’S C M O S Silicon gate process technology as w e ll as advanced

Contextual Info: PRELIMINARY 1,048,576 W ORD x 4 BIT DYN AM IC RAM DESCRIPTION T he T C 514410A P /A J/A SJ/A Z is the n e w g en e ra tio n dyn am ic R A M organized 1 ,0 4 8 ,5 7 6 words by 4 bits. T he T C 514410A P /A J/A SJ/A Z u tiliz es T O S H IB A ’S CM OS S ilico n gate process tech n ology as w e ll as

Contextual Info: TOSHIBA TH M 72V1615ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which

TC5118165

Abstract: TC5118165BFT
Contextual Info: INTEGRATED TO SH IB A M O S D IG ITA L INTEG RATED CIRCUIT CIRCUIT T C 5 1 1 8 1 6 5 BJ / B F T - 60 T C 5 1 1 8 1 6 5 BJ / BFT - 70 TOSHIBA TECHNICAL TE N TA TIV E D A T A 1 ,0 4 8 ,5 7 6 W O R D x DATA SILICON GATE C M O S 16 BIT HYPER PAGE ED O D Y N A M IC R A M

Contextual Info: T O S H IB A D IG IT A L IN T E G R A T E D CIRCUIT INTEGRATED CIRCUIT TO SHIBA T C 5 2 8 1 2 8 \ P / A J- 1 0 , TC528128AP / A J -12 TECHNICAL DATA SILIC O N G A T E C M O S P R E L IM IN A R Y 131,072W ORDSx88ITS M U LT IPO R T D RA M DESCRIPTION The TC528128AP/ A J is a CMOS multiport memory equipped with a 131,072-words by 8-bits

BFT 50 TH

Contextual Info: PRELIMINARY 1,048,576 WORD x 1 BIT DYNAMIC RAM DESCRIPTION T he TC511002BP/BJ/BZ/BFT is th e new g en eratio n dynam ic RAM organized 1,048,576 words by 1 bit. T he TC511002BP/BJ/BZ/BFT utilizes TO SH IB A ’S CMOS Silicon gate process technology a s w ell as

Contextual Info: Ig B g g B g M 111 » f ï j i- filli 2,0 97 ,1 5 2 W O RDS x 4 0 BIT D Y N A M IC RAM 1 >| f 8 : r « ; | H H iiili PRELIMINARY M O D U LE DESCRIPTION The THM402020SG is a 2,097,152 words by 40 bits dynamic RAM module which assembled 20 pcs of TC514400J on the printed circuit board.

az60

Contextual Info: 4,194,304 W O R D x 1 BIT D Y N A M IC R A M * This is advanced inform ation and specifica­ tions are subject to change w ithout notice. D ESC R IPT IO N The TC514101AP/AJ/ASJ/AZ is the new generation dynam ic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: TOSHIBA THL64V8015BTG-4f-5,-4Sf-5S TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The TH L64V8015BTG is a 8,388,608-w ord by 64-bit dynamic RAM module consisting of eight T C 5165805BFT/BFTS DRAMs on a printed circuit board. This module is optimized for applications

Contextual Info: TOSHIBA THM73V1615BTG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM 73V1615BTG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 T C 5165405B FT DRAMs on a printed circuit board. This module is optimized for applications which

THM401020

Contextual Info: 1,048,576 W O R D Sx 4 0 BIT D YN A M IC RAM MODULE DESCRIPTION The THM401020SG is a 1,048,576 words by 40 bits dynamic RAM module which assembled .10 pcs of TC514400J on the printed circuit board. The THM401020SG is optimized for application to the systems which are required high density and