TC53 Search Results

TC5316200bP

Abstract: TC5316200BP/BF
Contextual Info: TOSHIBA TC5316200BP/BF SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM D escription The TC5316200BP/BF is a 16,777,216 bit read only memory organized as 1,048,576 words by 16 bits when BY I t is logical high, and organized as 2,097,152 words by 8 bits when BYTE is logical low.

character generater

Contextual Info: 4M BIT 256K W O RD x 16 B IT / 512K W O R D x 8BIT CM OS M ASK ROM DESCRIPTION The BYTE The The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.

A18D0

Abstract: TC534000AP
Contextual Info: Slsllllf I I I ! llllll ¡11 4M BIT 512K W O R D x 8 B IT CMOS MASK ROM DESCRIPTION The TC534000AP/AF is a 4,194,304 bits read only memory organized as 524,288words by 8bits. The TC534000AP / AF is fabricated using Toshiba’s advanced CMOS technology which provides the

TC531621

Contextual Info: TOSHIBA TC5316210CP/CF PRELIMINARY SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM Description TheTC 5316210C P/C F is a 16,777,216 bit read only m em ory organized as 1,048,576 w ords by 16 bits when BYTE is logical

TC531024P-12

Contextual Info: TOSHIBA TC531024P-12/15 TC531024F-12/15 SILICON STACKED GATE CMOS 65,536 WORD x 16 BIT CMOS MASK ROM Description The T C 5 3 1 0 2 4 P /F is a 1,048,576 bit read only m em ory organized as 65,536 words by 16 bits. The T C 5 3 1 0 2 4 P /F is fabricated using Toshiba’s advanced C M O S technology w hich results in high speed and low pow er features:

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC531621OBP/BF/BFT 16M BIT 1M W O R D x 16 B IT / 2 M W ORD TENTATIVE x 8 B IT C M O S M A S K R O M DESCRIPTIO N T he T C 5316210B P / B F / BFT is a 16,777,216 bits read only m em ory organized as 1,048,576 words by

CA SC-74A

Abstract: 200B DK-2750 TC53
Contextual Info: TC53 VOLTAGE DETECTOR FEATURES • ■ ■ ■ ■ ■ GENERAL DESCRIPTION Highly Accurate . ±2% Low Power Consumption . 1.0µA, Typ. Detect Voltage Range . 1.6V to 6.0V in 0.1V Steps Operating Voltage . 1.5V to 10.0V

tc818a

Abstract: TC514
Contextual Info: DATA ACQUISITION TC500 TC510 TC520A 16 Bit Front End 17 Bit Front End S.I.A. TC500A TC514 17 Bit Front End 17 Bit Front End with 4 Channel Input MUX TC534 17 Bit, 4 Input Channel TC7135* 4-1/2 Digit A/D TC14433/A* 3-1/2 Digit A/D *See Web Site for Data Sheet

TMM333P

Abstract: RC032 TMM333 TC5334P 1ba4 RDD16
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS 4,096 W O R D X 8 B IT C M O S M A S K RO M SI L I C O N G ATE — - - . _ TC5334P CMOS DESCRIPTION The TC5334P is a 32,768 bit low power read only memory organized as 4,096 words by 8 bits using C M O S technology, and operates from a single 5V

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC5316200AP/AF 16M BIT 1M W O R D x 16 B IT / 2 M W ORD x 8 B IT C M O S M A S K RO M DESCRIPTIO N T h e T C 5 3 1 6 2 0 0 A P / A F is a 1 6 ,7 7 7 ,2 1 6 b its r e a d o n ly m e m o ry o rg a n iz e d a s 1 ,0 4 8 ,5 7 6 w o rd s b y 1 6

3A73

Contextual Info: 1M BIT 65,536 W O R D x 16 BIT C M O S M A S K R O M DESCRIPTION The TC531024P/F is a 1,048,576 bits read only memory organized as 65,536 words by 16 bits. The TC531024P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high speed and low power features with access time of 120ns / 150ns, an operation current of 40mA at

TC538000AF

Abstract: OA60
Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS INTEGRATED CIRCUIT TC538000AP/AF SILICON GATE CMOS 8 MBIT 1 M W O RD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538000AP/AF is a 8,388,608-bit Read Only Memory organized as 1,048,576 words by 8 bits. The TC538000AP/AF is fabricated using Toshiba’s advanced CMOS technology which provides the

50702

Abstract: TC531024P-15 C-15 DIP40 TC531024F-15
Contextual Info: .iiiiiiiiiiiiiMiwniniiiti^iginililBiiiii11 1M BIT 65,536 W ORD x 16 BIT CMOS MASK ROM DESCRIPTION The TC531024P/F is a 1,048,576 bits read only memory organized as 65,536 words by 16 bits. The TC531024P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high

toshiba lot number format

Abstract: TC5335P TMM333P TMM33 1ba4 5335P
Contextual Info: 1 TOSHIBA MOS MEMORY PRODUCTS 4 .0 9 6 W O R D X 8 B IT CMOS M A S K ROM TC5335P S IL IC O N G A T E C M O S DESCRIPTION The TC 5335P m e m o ry CMOS is a 3 2 , 7 6 8 o r g a n iz e d t e c h n o lo g y , s u p p ly . The TC 5335P d e v ic e s e le c t io n

TC5316200CP

Contextual Info: INTEGRATED TOSHIBA CIRCUIT TOSHIBA MOS INTEGRATED CIRCUIT TC5316200 C P/ CF / CFT Seiko Instruments Inc TECHNICAL DATA SILICON GATE CMOS 16 MBIT (1 M W O RD BY 16 BITS/2 M W O RD BY 8 BITS) CMOS MASK ROM DESCRIPTION The TC5316200CP/CF/CFT is a 16,777,216-bit Read Only Memory organized as 1,048,576 words by 16

marking ACOM

Abstract: RIFA 430 aCOM marking MCP1525 TC530 TC530COI TC530CPI TC534 TC534CKW TC534CPL
Contextual Info: Obsolete Device TC530/TC534 5V Precision Data Acquisition Subsystems Features General Description • Precision up to 17-Bits A/D Converter • 3-Wire Serial Port • Flexible: User Can Trade Off Conversion Speed For Resolution • Single Supply Operation

TC53

Contextual Info: Temperature Compensated Crystal Oscillators ULTRA MINIATURE 5x3.2x1.7mm SMD TCXO/VCTCXO IN LCC PACKAGE - TC53 Series FEATURES RoHS Compliant (Pb-Free), Tight Stability over Wide Temperature Range Voltage Control Option for Electric Frequency Adjustments

SOP32 525mil

Abstract: DIP32 AF-15
Contextual Info: m ÈÊÈÊm 2M BIT 2 5 6 K W O R D X 8 B IT CM O S M A S K ROM DESCRIPTION The TC532000A P/A F is a 2,097,152 bits read only memory organized as 262,144 words by 8bits. The T C 532000A P/A F is fabricated using Toshiba’s advanced CMOS technology which provides the

TC534200P

Contextual Info: • IIS 4M BIT 256K W O RD x 16 B IT /5 1 2 K W O R D x 8B IT CM OS M ASK ROM DESCRIPTION The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when BVt E is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.

TMM2364

Abstract: tmm2764 TC5364P toshiba mos memory products tmm2364 rom
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS 6 4 K BIT 8K W O R D X 8 BIT C M O S M A S K ROM TC5364P SILICON GATE C M O S DESCRIPTION cells and _clo cke d p eripheral c irc u itry . T h e T C 5 3 6 4 P is a 6 5 ,5 3 6 b it read o n ly m e m o ry organized as 8 ,1 9 2 w ords b y 8 bits w ith a lo w b it

Contextual Info: Obsolete Device TC530/TC534 5V Precision Data Acquisition Subsystems Features General Description • Precision up to 17-Bits A/D Converter • 3-Wire Serial Port • Flexible: User Can Trade Off Conversion Speed For Resolution • Single Supply Operation

MB8316200

Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Contextual Info: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S

200B

Abstract: DK-2750 RG41 TC53 SOT23A
Contextual Info: M TC53 Voltage Detector Features General Description • • • • • • The TC53 is a low power voltage detector. Typical supply current consumption is only 1µA at an input voltage of 2V. The voltage detection threshold setting is factory-programmed and guaranteed to ±2% accuracy.

Contextual Info: TC53H1024P-85 TARGET 1M BIT 64K WORD x 16 BIT HIGH-SPEED CMOS MASK ROM SIUCON GATE CMOS DESCRIPTION The TC53H1024P Is a high-speed 1,048,576 bits read only memory organized as 69,830 words by 16 bits with a low bit cost, thus being suitable for use in program memory of microprocessors.