TC.. 12A MOSFET DRIVERS Search Results

Contextual Info: FDB42AN15A0_F085 N-Channel Power Trench MOSFET June 2013 FDB42AN15A0_F085 N-Channel Power Trench® MOSFET 150V, 35A, 42mΩ D D Features „ Typ rDS on = 30mΩ at VGS = 10V, ID = 12A „ Typ Qg(tot) = 78nC at VGS = 10V, ID = 12A G „ UIS Capability „ RoHS Compliant

CHM3055LAPAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM3055LAPAGP CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE

GS 069

Abstract: Chenmko Enterprise
Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM21A3PAPT CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A

TC. 12A MOSFET Drivers

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM3055LAPAPT CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A

CHM21A3PAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM21A3PAGP CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE

SVD12N65F

Contextual Info: SVD12N65T/SVD12N65F 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’ s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored

irfp9240

Contextual Info: HAJims S IRFP9240, IRFP9241, IRFP9242, IRFP9243 Semiconductor y y -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V • High Input Impedance These are P-Channel enhancement mode silicon gate

2E12

Abstract: FSGL033D1 FSGL033R3 FSGL033R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGL033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

TA17522

Abstract: IRFP9240
Contextual Info: IRFP9240 Data Sheet July 1999 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

IRF9530

Abstract: IRF9531 IRF9530 mosfet
Contextual Info: S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate

Contextual Info: ¡lì h a r r is U U F S S 13A 0 D , FSS1 S E M I C O N D U C T O R 12A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 12A, 100V, rOS ON = 0.1700 The Discrete Products Operation of Harris Semiconductor

IRF9530

Abstract: dc motor 9v DATA SHEET IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
Contextual Info: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

IRFP9240

Abstract: TA17522
Contextual Info: IRFP9240 Data Sheet January 2002 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

IRFP9240

Abstract: IRFP9
Contextual Info: IRFP9240 Data Sheet July 1999 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

irfp9240

Abstract: IRFP9243
Contextual Info: IRFP9240, IRFP9241, IRFP9242, IRFP9243 S E M I C O N D U C T O R -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V These are P-Channel enhancement mode silicon gate

Contextual Info: FSGYE230R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

IRF9530 mosfet

Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
Contextual Info: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs [ /Title These are P-Channel enhancement mode silicon gate power IRF95 field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified

f3055l

Abstract: FP3055LE f3055 Fp3055 RFD3055LESM9A RFP3055 RFD3055LESM AN7254 RFD3055LE RFP3055LE
Contextual Info: LOGIC LEVEL POWER MOSFET DATA SHEETS RFD3055LE, RFD3055LESM, RFP3055LE S E M I C O N D U C T O R 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 12A, 60V SOURCE DRAIN

Contextual Info: FSGL130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

FSYE13A0D

Abstract: FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3 2E12 MIL-STD-750 a3 4741 5
Contextual Info: FSYE13A0D, FSYE13A0R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

IRF9530 mosfet

Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334 JEDEC TO-263A IRF9530 fairchild
Contextual Info: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of

Contextual Info: FSGL033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

SEC irf630

Abstract: IRF630 SEC irf630 datasheet CIRF630 irf630 IRF630 p 4.5V to 100V input regulator 4.5V TO 100V INPUT REGULATORS
Contextual Info: IRF630 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high ‹ Dynamic dv/dt Rating speed power switching applications such as switching ‹ Repetitive Avalanche Rated regulators, converters, solenoid and relay drivers.

Contextual Info: FSGL033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both