TA17511 Search Results

Contextual Info: RFP8P10 Data Sheet 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET Title This P-Channel enhancement mode silicon gate power field FP8 effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, 0 relay drivers, and drivers for high power bipolar switching

Contextual Info: IRFF9130 Data Sheet Title FF9 0 bt A, 0V, 00 m, February 1999 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

AN7254

Abstract: RFP12P08 RFP12P10 TB334 TA17511
Contextual Info: RFP12P08, RFP12P10 Semiconductor June 1999 Data Sheet • 12A, 80V and 100V The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers

RFM8P08

Abstract: RFM8P10 RFP8P08 RFP8P10 TB334
Contextual Info: RFM8P08, RFM8P10, RFP8P08, RFP8P10 Semiconductor Data Sheet -8A, -80V and -100V, 0.400 Ohm, P-Channel Power MOSFETs October 1998 File Number 1496.1 Features • -8 A ,-8 0 V and -1 0 0 V These are P-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such

IRF9530 mosfet

Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
Contextual Info: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs [ /Title These are P-Channel enhancement mode silicon gate power IRF95 field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified

Contextual Info: H a r r IRFF9130, IRFF9131, IRFF9132, IRFF9133 i s s e m i c o n d u c t o r -5.5A and -6.5A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -5.5A and-6.5A ,-80V and-100V These are P-Channel enhancement mode silicon gate

irf9530

Abstract: irf9532 JEDEC TO-263A IRF9531
Contextual Info: H A F R F R IS S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate

RFP12P10

Abstract: RFP12P08 TB334
Contextual Info: RFP12P08, RFP12P10 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers

IRF9530 mosfet

Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334 JEDEC TO-263A IRF9530 fairchild
Contextual Info: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of

Contextual Info: RFP12P08, RFP12P10 Semiconductor June 1999 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators,

Contextual Info: IRF9530, RF1S9530SM Semiconductor A p ril 1999 D ata S h eet -12A, -100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

TB334

Abstract: AN7254 RFP8P10
Contextual Info: RFP8P10 Data Sheet July 1999 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching

Contextual Info: RFP12P08, RFP12P10 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs Title The RFP12P08, and RFP12P10 are P-Channel FP1 enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, 08,

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

IRFF9130

Contextual Info: IRFF9130 Data Sheet February 1999 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET File Number 2216.3 Features • -6.5A, -100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFF9130

Contextual Info: IRFF9130 Data Sheet January 2002 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET Features • -6.5A, -100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRF9530

Abstract: IRF9531 IRF9530 mosfet
Contextual Info: S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate

rfp12p10

Abstract: rfp12p08 TB334 FAIRCHILD to220ab package
Contextual Info: RFP12P08, RFP12P10 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers

f9530

Contextual Info: *f*53S IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V • High Input Impedance These are P-Channel enhancement mode silicon gate

IRF9130

Abstract: gate driver for mosfet irf9130 IRF9130 mosfet power mosfets to 204aa TC.. 12A MOSFET Drivers gate drive for mosfet irf9130
Contextual Info: IRF9130 Data Sheet February 1999 -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

Contextual Info: IRF9130, IRF9131, IRF9132, IRF9133 -10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs July 1998 Description Features -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

AN7254

Abstract: RFP8P10 TB334
Contextual Info: RFP8P10 Data Sheet 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching