TA 2025 B Search Results

T718N

Abstract: T1189N T1509N T1989N T358N T508N T588N T879N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V + - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung [°C] [A] [W] 25 302 431 482 609 943 1225 1406 1791 2025 2910 290 413 462 583

TA 2025 B

Abstract: bv 2025 BV EI 302 2025
Contextual Info: phone: 49 6402 808-0 HAHN - Elektrobau GmbH telefax: 49 (6402) 808-60 Bellersheimer Strasse 45 e-mail: info@hahn-trafo.de D - 35410 Hungen data sheet: BV EI 302 2025 size 2 a: height 21.8 mm 1.5 VA ta 70/F

bt 2025

Abstract: transistor bc 541 2SK334 TRANSISTOR IFW transistor Bc 542 60N11
Contextual Info: S ANYO SEMICONDUCTOR CORP 3SE D 7^707^ 00CHEE1 1 . T-29-25 —— N-Channel Junction Silicon FET 2025 Capacitor Microphone Applications • 933C FEA TU RE •Because it has an ultra-compact outline, sets can be made compact. A BS O L U T E M AXIM U M RATINGS/Ta = 25° C

190mAh

Contextual Info: 0Em EEMB BATTERY Lithium Polymer Battery B rie fD a ta s he e t 1 BASIC SPECIFICATION LP 50 2025 1 Bat tery Type 2 Nomi nal C apaci ty 3 Nomi nal Vol tage 3 . 7V 0. 2C d i sc ha r ge 4 Char gi ng Vol tage 4.2V±0.05V S tandar d Char ge Method: C C / C V ( con s t an t c ur r en t/ c o ns ta n t vol t age)

TT 2206

Abstract: cvr 440 2SK595
Contextual Info: 2SK595 2025 N9- Y * \ ,a * B c,») - - M t t t * * J l t %’ •FBET7ot^ «S. Assolute Ha» 1nun k A tin ça A * - - 5 #C un 1 1 •20 10 1 100 12S -55-025 r - k - r u o W£ V c o o r- > m t 1G ru !0 Po Tj TtlB s a n a ta * E l e c t x i c a l C h *X A ct- ri*tic*/T »- 2 S #C

MSM5052-02

Abstract: thermistor 7 rom clinical Thermometer ki 10938
Contextual Info: O K I Semiconductor MSM5052-02 Clinical Thermometer with Clock Function GENERAL D ESC R IPTIO N The MSM5052-02 is an IC, equipped with both clinical thermometer and clock functions. This device uses a thermistor as its sensing element and displays temperatures in the range of 32 °

Contextual Info: O K I Semiconductor MSM5052-02 Clinical Thermometer with Clock Function GENERAL DESCRIPTION The M SM 5052-02 is an IC, equipped w ith both clinical therm om eter and clock functions. This device uses a therm istor as its sensing elem ent and displays tem peratures in the range of 32 °

thermistor 103

Abstract: t3d2d Ishizuka Electronics 103AT thermistors 103AT 11 40 pin configuration LCD 3.5-DIGIT thermistors 103AT IN 5339
Contextual Info: O K I Semiconductor MSM5052-10 Thermometer with Clock and Alarm Function GENERAL DESCRIPTION The MSM5052-10 is a 4-bit low-power microcontroller, manufactured using CMOS process technology, and is equipped with a digital thermometer, an alarm with a snooze function, and

clinical Thermometer

Abstract: Thermometer clock LCD ic xl 1507 MSM5052-02 lcd N7 Linear Thermometer ic 3.5-DIGIT lcd IC 2025 Thermometer ic oki c301
Contextual Info: O K I Semiconductor MSM5052-02 Clinical Thermometer with Clock Function GENERAL DESCRIPTION The M SM 5052-02 is an IC, equipped w ith both clinical therm om eter and clock functions. This device uses a therm istor as its sensing elem ent and displays tem peratures in the range of 32 °

Contextual Info: O K I Semiconductor M S M 5 5 2 - 1 Thermometer with Clock and Alarm Function GENERAL DESCRIPTION T he MSM5052-10 is a 4-bit lo w -p o w e r m icrocontroller, m a n u fa ctu re d u sin g CM OS p rocess technology, a n d is eq u ip p e d w ith a d ig ital th erm o m eter, a n ala rm w ith a sn o o ze fu n ctio n , an d

thermistor 103

Abstract: thermistor 10k 25 3435 MSM5052-10 3.5-DIGIT lcd IC 2025 Thermometer clock LCD ic Digital alarm clock ic with 28 pin 158T MSM5052-10GS-BK MSM5052-10GS-K
Contextual Info: O K I Semiconductor M S M 5 5 2 - 1 Thermometer with Clock and Alarm Function GENERAL DESCRIPTION T he MSM5052-10 is a 4-bit lo w -p o w e r m icrocontroller, m a n u fa ctu re d u sin g CM OS p rocess technology, a n d is eq u ip p e d w ith a d ig ital th erm o m eter, a n ala rm w ith a sn o o ze fu n ctio n , an d

IC 2025

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

smd diode af3

Abstract: SMD IC 2025 DIODE BAT 85 SMD PACKAGE PLCC28R IC 2025 PEB2025 PEB2025-N PEB2025-P PL-CC-28-R 2025N
Contextual Info: Since April 1, 1999, Siemens Semiconductor is Infineon Technologies. The next revision of this document will be updated accordingly. ATTENTION ISDN Exchange Power Controller IEPC PEB 2025 CMOS IC Features ● Supplies power to up to four transmission lines

AN1955

Abstract: MRF7P20040H J1311 A114 A115 JESD22 ATC600F2R4AT250XT j182 semiconductor J1240 CRCW12061000FKEA
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 1, 8/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 2010 to

C5750X7S2A106KT

Abstract: AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

CW12010T0050GBK

Abstract: CW12010T0050G J965 ATC600F1R1BT250XT Transistor J550
Contextual Info: Document Number: MRF8P20160H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

CW12010T0050GBK

Abstract: J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 11/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 1/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

PE4462

Abstract: PE4462-48MLP7X7-4000C PE4462-48MLP7X7-52A
Contextual Info: ADVANCE INFORMATION PE4462 High Isolation, Non-Blocking 4x6 RF Matrix Switch Product Description The PE4462 is a high-performance monolithic CMOS switch matrix with integrated power splitters for nonblocking operation. Any of the four RF inputs can be connected to one or more of the six RF outputs

PE4462

Abstract: PE4462-48MLP7X7-4000C PE4462-48MLP7X7-52A
Contextual Info: ADVANCE INFORMATION PE4462 High Isolation, Non-Blocking 4x6 RF Matrix Switch Product Description The PE4462 is a high-performance monolithic CMOS switch matrix with integrated power splitters for nonblocking operation. Any of the four RF inputs can be connected to one or more of the six RF outputs

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 2, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 1800 to