AFT20P140 Search Results
AFT20P140 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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AFT20P140-4WGNR3 |
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RF FETs, Discrete Semiconductor Products, TRANS RF LDMOS 24W OM780-4GW | Original | 17 | |||
AFT20P140-4WNR3 |
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RF FETs, Discrete Semiconductor Products, TRANS RF 2GHZ 24W OM780-4 | Original | 17 |
AFT20P140 Price and Stock
NXP Semiconductors AFT20P140-4WNR3RF MOSFET LDMOS 28V OM780-4 |
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AFT20P140-4WNR3 | Digi-Reel | 1 |
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AFT20P140-4WNR3 | 616 | 1 |
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AFT20P140-4WNR3 | Bulk | 250 |
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AFT20P140-4WNR3 | 10,560 | 1 |
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AFT20P140-4WNR3 | 18,000 |
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Rochester Electronics LLC AFT20P140-4WNR3RF MOSFET LDMOS 28V OM780-4 |
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AFT20P140-4WNR3 | Bulk | 4 |
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FLIP ELECTRONICS AFT20P140-4WNR3RF MOSFET LDMOS 28V OM780-4 |
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AFT20P140-4WNR3 | Bulk | 20 |
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Freescale Semiconductor AFT20P140-4WNR3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AFT20P140-4WNR3 | 14 |
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AFT20P140 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth |
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AFT20P140--4WN AFT20P140-4WNR3 | |
C5750X7S2A106KT
Abstract: AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501
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AFT20P140--4WN AFT20P140-4WNR3 AFT20P140--4WN C5750X7S2A106KT AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501 | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 11/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth |
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AFT20P140--4WN 1880-2025dated AFT20P140-4WNR3 AFT20P140-4WGNR3 | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 1/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth |
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AFT20P140--4WN AFT20P140-4WNR3 AFT20P140-4WGNR3 1/2014Semiconductor, | |
MMZ20363B
Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
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BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
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