Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TSD1130 Search Results

    SF Impression Pixel

    TSD1130 Price and Stock

    Daniels Manufacturing Corporation (DMC)

    Daniels Manufacturing Corporation (DMC) TSD1130

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TSD1130 Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    TSD1130 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MMBFJ174

    Abstract: P1087 MMBF5115 2N5019 J176 2N5018 2N5115 2N5116 J174 MMBF5114
    Contextual Info: bflE D N ATL tSD1130 003^501 TDS • NSCS SE„ IC0N] JIS C r e t e ) P C hannel Vp@VDSlD RoS(on) ( a ) @ iD bvgss Device (V) (V) Min Min Ciss (PF) Max Crss (PF) Max ton (ns) Max toff (ns) Max Package (V) (nA) Min (mA) 10 -1 5 1000 75 1 45 10 35 65 T 0 -18(11)


    OCR Scan     		2N5018 2N5019 MMBF5114 O-236* 2N5115 MMBF5115 2N5116 MMBF5116 MMBFJ174 P1087 J176 J174 PDF

    CMD8

    Contextual Info: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)


    OCR Scan     		DD3711b T-39-01 CMD8 PDF

    DIODE 3L2

    Abstract: Complementary MOSFET Half Bridge
    Contextual Info: e? National February 1996 Semiconductor' NPS8852H Complementary MOSFET Half Bridge Features General Description These Complementary M O SFE T half bridge devices are produced using National's proprietary, high cell density, D M O S technology. This very high density process is especially tailored to


    OCR Scan     		NPS8852H b5D113Q DIODE 3L2 Complementary MOSFET Half Bridge PDF

    BC547 surface mount

    Abstract: BC548 T0-92 bc857 to92 MPSA18 BC547 bc856 to 92 T0-9297 bc857 to 92 TIS97
    Contextual Info: Low Noise Amplifiers t.3E D Min Max mA MHz Min BC546 110 450 2 10 300 Typ T0-92(97) 1,2C BC846 110 0.01 10 300 Typ TO-236* 1,2C PNP NPN Package Notes 2 BC556 75 475 2 10 300 Typ TO-92(97) 1,2C BC856 125 475 2 10 300 Typ TO-236* 1,2C 2N2484 100 500 0.01 3


    OCR Scan     		tSD1130 BC546 BC846 T0-92 O-236* BC556 BC856 N3962 PN4249 PN4250A BC547 surface mount BC548 bc857 to92 MPSA18 BC547 bc856 to 92 T0-9297 bc857 to 92 TIS97 PDF

    NDH831N

    Contextual Info: National Semiconductor~ July 1 9 9 6 NDH831N N-Channef Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		NDH831N 125-C bSD1130 NDH831N PDF