T5C1 Search Results

Contextual Info: SANYO SEMICONDUCTOR CORP S3E ]> Ordering number: EN410S 7 t5c17G7b O D l D i n 10b I TSAJ T - ~7 '7 - 2 - / Monolithic Digital 1C LB8106M No.4105 i SA\YO Actuator Driver for Portable CD Players I PINOUT OVERVIEW The LB8106M is a four-channel actuator driver for

Contextual Info: • M T5C1189 TEUWULtXj'' IH«. SRAM 128Kx 9 SRAM WITH SINGLE CHIP ENABLE FEATURES PIN ASSIGNMENT Top View • • • • High speed: 17, 20, 25 and 35ns A utom atic C hip Enable pow er dow n All inputs and outputs are TTL com patible H igh-perform ance, low -pow er, CM O S double-m etal

Contextual Info: p ilC R O N M T5C1005 SRAM 256Kx 4 SRAM FEATURES PIN ASSIGNM ENT Top View • High speed: 20, 25, 35 and 45ns • H igh-perform ance, low -pow er, CM O S double-m etal process • Single +5V ±10% pow er supply • Easy m em ory expansion w ith CE and OE options

MT5C1005DJ-20

Abstract: 5c1005
Contextual Info: |u iic : r o M T5C1005 256K X 4 SR AM n SRAM 256K x 4 SRAM WITH OUTPUT ENABLE FEATURES • High speed: 12,15, 20 and 25 • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options

T5C1005DJ

Contextual Info: p ilC R O N 256K SRAM T5C1005 X 4 SRAM 256K x 4 SRAM FEA TU R ES • High speed: 1 2 ,1 5 ,1 7 ,2 0 ,2 5 and 35 • High-perform ance, low-power, CM OS double-m etal process • Single +5V ±10% pow er supply • Easy m emory expansion w ith CE and OE options

Contextual Info: M IC R O N 128K SRAM M T 5C 1189 X 9 SR AM 128Kx 9 SRAM FEATURES PIN ASSIGNMENT (Top View • High speed: 15*, 17, 20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Automatic CE power down • All inputs and outputs are TTL compatible

Contextual Info: |U |IC =R O N 4K SRAM 4K X M T5C 1605 X 4 SRAM 4 SRAM FEATURES PIN ASSIGNMENT Top View • High speed: 8*, 10,12,15, 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options

kb3925

Abstract: isl6262acrz EC-IT8752 pc817 s6 Asus RTL8111C-GR sr7012 asus schematic diagram intel GM45 cantiga asus f3s
Contextual Info: 4 3 Reset 2 Off Button PWRGD DOWN CPU, VGA Thermal OVERT# FORCE_OFF# Circuit Daughter Board EC_RST# PWR_SW# 2 D AC_BAT_SYS +5VA +3VA 1 3 6 Power On SWITCH EC KB3925 5 PM_RSMRST# VSUS_ON ICH9-M VRMPWRGD C SUSC_EC# From EC 9 +12V +5V +3V +1.8V +1.5V +0.9V GMCH

87C257 equivalent

Abstract: 87C257 "pin compatible" MT5C1628
Contextual Info: I^ H C R O N T5C1628 2K X 8 SRAM LATCHED SRAM WITH ADDRESS LATCH FEATURES PIN ASSIGNMENT Top View OPTIONS • Timing 15ns access 30ns access 45ns access • Packages Plastic DIP (300 mil) Ceramic DIP (300 mil) Plastic SOJ (300 mil) Ceramic LCC (28 pin)

Contextual Info: MICRON TECHNOLOGY INC V SSE D ic in a r s i SRAM blllSMT DGG33bM ITS B U R N T5C1604 4K X 4 S R A M 4K X 4 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply_ • Easy memory expansion with CE option

Contextual Info: T5C1001 1 MEG X 1 SRAM M IC R O N 1 MEG X 1 SRAM 5 VOLT SRAM FEATURES • High speed: 12*, 15», 1 7 ,2 0 ,2 5 ,3 5 and 45ns • High-perform ance, low-power, CM OS double-metal process • Single +5V ±10% pow er supply • Easy m em ory expansion w ith CE option

Contextual Info: T5C1606/7 SRAM 4K X 4 SRAM FEATURES • High speed: 8 ,1 0 ,1 2 ,1 5 , 20, 25 and 35ns • H igh-perform ance, low -pow er, CM O S double-m etal process • Single +5V ±10% pow er supply • Easy m em ory expansion with CE option • All inputs and outputs are TTL com patible

Contextual Info: Data Sheet January 1997 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations T7901 ISA Single Wide Area Connection ISA-SWAC Device Features • Memory-based interrupt queue and command queue. ■ One wide area connection port that can be config­

micron sram

Contextual Info: M T5C 1606/7 4K SRAM X 4 SRAM FEATURES • H igh speed: 8 ,1 0 , 1 2 ,1 5 , 2 0 ,2 5 and 35ns • H igh-perform ance, low -pow er, CM O S double-m etal process • Single +5V ±10% pow er supply_ • Easy m em ory expansion w ith CE option • All inputs and outputs are T TL com patible

Contextual Info: |V|IC=RON 128K S R A M 1 2 8 K x 8 T5C1008 X 8 SRAM S R A M FEATURES • High speed: 12,15,20 and 25 • Available in 300 mil- and 400 mil-wide SOJ packages • High-performance, low-power, CMOS double-metal process • Single +5V +10% power supply • Easy memory expansion with CE1, CE2 and OE

MARKING a10

Contextual Info: M T 5C 1001 lEG X 1 SRAM MICRON SRAM 1 M E G x 1 SRAM 5 VOLT SRAM FEATURES • High speed: 1 2 ,1 5 ,1 7 , 20, 25 and 35 • High-perform ance, low-power, CM OS double-m etal process • Single +5V ±10% pow er supply • Easy m emory expansion w ith CE option

Contextual Info: ADVANCE 1 MEG X 4 SRAM SRAM WITH OUTPUT ENABLE FEATURES PIN ASSIGNMENT Top View • High speed: 20,25, 35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options

T5C1005DJ

Contextual Info: M IC R O N MT8S25632 SRAM MODULE 256K x 32 SRAM FEATURES Industry com patible pinout High speed: 20, 25, 35 and 45ns H igh-density 1MB design H igh-perform ance, low-power, CMOS process Single +5V ± 10^ pow er supply Easy m em ory expansion w ith CE function

ci 4521

Abstract: S13A speed probe MT5LC128K8D4S13A MT5LC64K16D4S13A
Contextual Info: MICRON • S 13A 1 MEG SRAM DIE SCM CONDUCTOR INC SRAM DIE 1 MEG SRAM 1 2 8 K X 8 , 6 4 K x 16 FEATURES • Single +3.3V or +5V power supply • 5V tolerant I/O • Individual byte controls for both READ and WRITE DIE OUTLINE Top View 3.3V none n /a -15*

MT5C1189

Abstract: cc1179
Contextual Info: MICRON SEMICONDU CTOR INC b?E D • blllSHT ODQ'iaññ GfiS ■ MRN M IC R O N B T5C1189 128KX 9 SRAM 5E.MICOMDI.CTOP. INC 128 K x 9 S R A M S R A M FEATURES • High speed: 15*, 17,20,25 and 35ns • High-performance, low-power, CMOS double-metal process

TTA-16

Contextual Info: MICRON TECHNOLOGY INC blllSM'ì DDD33Sb 02^ • MRN T5C1001 1 MEG X 1 SRAM 55E ]> I^ IIC Z R O N - ' V H ^ l ì > 0 5 SRAM 1 MEG X 1 SRAM 5 VOLT SRAM FEATURES • High speed: 12*, 15*, 17,20,25,35 and 45ns • High-performance, low-power, CMOS double-metal

TCP8107

Abstract: u212b ricoh r5c833 RT8203 9lprs9 bg10v mac232 U207A U207B PC821
Contextual Info: 5 4 3 2 1 01_Block Diagram 02_System Setting 03_CPU-PENRYN 1 Penryn 05_CPU-Capacitor 06_NB_-CANTIGA-CPU (1) LVDS LCD 08_NB_-CANTIGA-DDR2 bus (3) P21 09_NB_-CANTIGA-POWER (4) 10_NB_-CANTIGA-POWER (5) 15_SB_-ICH9M(PWR) MXM CONN. 16_SB_-ICH9M-OTHER (Z97V ONLY)

Contextual Info: MICRO N S E M I C O N D U C T O R INC b?E D • t.lllSM'l D D 0 R 3 7 ü RH2 ■ MRN PRELIMINARY T5C128K8A1 REVOLUTIONARY PINOUT 128K x 8 SRAM MICRON I S SEMICONDUCTOR. INC R A M 1 2 8 K x 8 S R A M FEATURES • H igh speed: 1 2 ,1 5 , 20 and 25ns • M ultiple center power and ground pins for greater

MT5C1608

Contextual Info: MICRON SEMICONDU CTOR INC M I C R O N I , L.7E D , • blllSMS 000^330 2bb ■ MRN w SRAM 2K 2K X T5C1608 X 8 SRAM 8 SRAM • H igh speed: 9 ,1 0 ,1 2 ,1 5 , 20 and 25ns • High-perform ance, low-power, CM OS double-m etal process • Single +5V +10% pow er supply