MT5C128K8A1 Search Results

TN-0514

Abstract: micron sram 128K x 8 sram tn0514
Contextual Info: MT5C128K8A1 REVOLUTIONARY PINOUT 128K x 8 SRAM SEMICONDUCTOR, INC. SRAM 128K x 8 SRAM FEATURES • High speed: 12, 15, 20 and 25ns • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with ?C/E and ?O/E options • Automatic ?C/E power down

Contextual Info: MICRO N S E M I C O N D U C T O R INC b?E D • t.lllSM'l D D 0 R 3 7 ü RH2 ■ MRN PRELIMINARY MT5C128K8A1 REVOLUTIONARY PINOUT 128K x 8 SRAM MICRON I S SEMICONDUCTOR. INC R A M 1 2 8 K x 8 S R A M FEATURES • H igh speed: 1 2 ,1 5 , 20 and 25ns • M ultiple center power and ground pins for greater

Contextual Info: MT5C128K8A1 RE VO LU T IO NA RY PINOUT 128K x 8 SRAM M IC R O N SRAM 128Kx 8 SRAM FEATURES • High speed: 12,15,20 and 25ns • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • Automatic CE power down

Contextual Info: MT5C128K8A1 REVOLUTIONARY PINOUT 128K x 8 SRAM I^IICZRON SRAM 128K x 8 SRAM FEATURES • High speed: 1 2 ,1 5 ,2 0 and 25ns • Multiple center power and ground pins for greater noise immunity • Easy m emory expansion w ith CE and OE options • A utom atic CE power down

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

Contextual Info: ADVANCE SRAM 128Kx 8 SRAM WITH SINGLE CHIP ENABLE, CENTER POWER AND GROUND PINS FEATURES • High speed: 1 2 ,1 5 , 20 and 25ns • Multiple center pow er and ground pins for greater noise immunity • Easy m emory expansion w ith CE and OE options • A utom atic CE power down

ci 4521

Abstract: S13A speed probe MT5LC128K8D4S13A MT5LC64K16D4S13A
Contextual Info: MICRON • S 13A 1 MEG SRAM DIE SCM CONDUCTOR INC SRAM DIE 1 MEG SRAM 1 2 8 K X 8 , 6 4 K x 16 FEATURES • Single +3.3V or +5V power supply • 5V tolerant I/O • Individual byte controls for both READ and WRITE DIE OUTLINE Top View 3.3V none n /a -15*

Contextual Info: b llis in O0 10 l b 3 • n RN SEM CQ N O JCTO ftlM C 1 MEG SRAM p3|E | SRAM DIE 1 MEG SRAM 1 2 8 KX 8 , 6 4 K x 16 FEATURES DIE OUTLINE Top View • Single +3.3V or +5V power supply • 5V tolerant I/O • Individual byte controls for both READ and WRITE

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

Contextual Info: PRELIMINARY M ir - E g r - in i 1 m t 5C128K8A1 R E VO LU T IO N A R Y PINOUT 128K X 8 SRAM S R A M 1 2 8 K x 8 S R A M FEATURES • High speed: 12,1 5 , 20 and 25ns • Multiple center power and ground pins for greater noise immunity • Easy m emory expansion w ith CE and OE options