T53 DIODE Search Results
T53 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
T53 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IXYS DIODE
Abstract: mdd142 E72873 MDD142-06N1 MDD142-08N1 MDD142-12N1 MDD142-14N1 MDD142-16N1
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g001712mdd142mdd142-06n1mdd142-08n1+6 | |
schematic receiver parabola
Abstract: MC44000 phillips circuits horizontal flyback 1XFH 50hz notch filter ic MC44001 MC44001P j 9227 DAC10 MC44011
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mc44001schematic receiver parabolamc44000phillips circuits horizontal flyback+6 | |
MOSFET IRF 713Contextual Info: • M302271 0054043 T53 ■ HAS IR F710/711/712/713 IRF71 OR/711R/712R/713R 33 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -22 0A B TOP VIEW • 1.7A and 2.0A, 350V - 400V • i"DS °n = 3.6fl and 5.0fl DRAIN (FLANGE) |
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m302271f710/711/712/713irf71or/711r/712r/713r+7 | |
74LS183
Abstract: IC 74LS183
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74ls183t54ls183/t74ls183t54lst74ls+2 | |
GC1700
Abstract: GC1700A GC1701 GC1702 GC1703 GC1704 GC1705 GC1706 GC1713
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0q00455gc1700ssaq13ngc1700a+7 | |
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Contextual Info: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package . 50“ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger |
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sep8506sdp8406sdp8106sdp8000/8600 | |
Telefunken u 237
Abstract: Telefunken u 267 U237B U237 U 237 BG Telefunken u 257 U237BG U257BG U247B U257B
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t-13-01u237bgu247bgu257bgu267bg10led+13 | |
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Contextual Info: AN7283S AN7283S FM Front-end IC for Car Radio • Description The AN7283S is a monolithic integrated circuit designed for car radio, supporting DTSs other than RF amp. It has buffer output of local oscillation frequency and also incorporates 2 Loop-AGC and PIN diode driver for antenna |
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an7283san7280s122db32fi52 | |
DIODE T53
Abstract: transistor marking p3 SOD15 IGBT trr igbt high frequency 1200V STTA212S DI 380 Transistor TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE DIODE marking ED diode tURBOSWITCH
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stta212sdiode t53transistor marking p3sod15+6 | |
DIODE T53
Abstract: diode sg 35 transistor marking p3 T53 diode STTA212S
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diode t53diode sg 35transistor marking p3t53 diode+1 | |
AN7283S
Abstract: an7283 3FW transistor G1103 lkt 108 40A-3 AN7280S F37A adx 312 SFE107MS3
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an7283san7280s122db20-lead+8 | |
AN7283S
Abstract: 40A-3 AN7280S F37A G1103 SFE107MS3
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an7283san7280s122db20-lead+4 | |
transistor marking 2A H
Abstract: STTA212S
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stta212stransistor marking 2a h | |
T53 diodeContextual Info: KBU6005 Thru KBU610 > 6 AMP SILICON BRIDGE RECTIFIER • FEATURES H Outline Drawing • Ideal for printed circuit board • Surge overload rating to 250 Amperes peak • Reliable low cost construction utilizing molded plastic technique • UL recognized: File #E106441 |
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kbu6005kbu610e106441kbu601+2 | |
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A/smd diode t53Contextual Info: PD -9.1668A International I R Rectifier IRG4ZC70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFREDa ultrafast, |
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irg4zc70udsmd-10a/smd diode t53 | |
STTA212SContextual Info: STTA212S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION ANDRECTIFICATION ULTRA-FAST AND SOFT RECOVERY |
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stta212s | |
STTA212SContextual Info: STTA212S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION ANDRECTIFICATION ULTRA-FAST AND SOFT RECOVERY |
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stta212s | |
cm15ld-12h
Abstract: CM20LD-12H CM10LD-12H CM15LD12 cm10ld CM15LD CM10MD-24H cm20ld CM5MD-24H cm25md-24h
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bp107old-12hcm15ld-12hcm20ld-12h+12 | |
DIODE T53
Abstract: STTA212S SWITCHING DIODE 600V 2A
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stta212sdiode t53switching diode 600v 2a | |
DIODE T53
Abstract: STTA212S
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stta212sdiode t53 | |
MPSL51
Abstract: 1N914 MPS-L51
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mpsl51o-226aa1n914b3b7h55+1 | |
Mikroelektronik Heft
Abstract: information applikation mikroelektronik "Mikroelektronik" Heft "halbleiterwerk frankfurt" mikroelektronik applikation A290D applikation heft mikroelektronik DDR mikroelektronik Heft 12 Mikroelektronik Information Applikation
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47/ufmikroelektronik heftinformation applikation mikroelektronikmikroelektronik" heft+7 | |
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Contextual Info: SGP13N60UFD IGBT CO-PAK FEATURES TO-220 p * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=6.5A) * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37nS (Typ) APPLICATIONS ?C * AC & DC Motor controls * General Purpose Inverters |
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sgp13n60ufdo-220 | |
BYV2100Contextual Info: Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV2100 FEATURES DESCRIPTION • Glass passivated Rugged glass SOD57 package, using a high temperature alloyed construction. • High maximum operating temperature |
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byv2100 | |