GC1713 Search Results

Contextual Info: GC1713E-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10pì C1/C2 Min. Capacitance Ratio7.0 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.950 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: GC1713D-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10pì C1/C2 Min. Capacitance Ratio7.0 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.950 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: GC1713F-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10pì C1/C2 Min. Capacitance Ratio7.0 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.950 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I

Contextual Info: GC1713T-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10pì C1/C2 Min. Capacitance Ratio7.0 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.950 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I

Contextual Info: GC1713EE-+2 Diodes Dual Varactor Diode with Common Anode Ct{Cj} Nom. F Junction Cap.5pì C1/C2 Min. Capacitance Ratio7.0 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.950 P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-T Mounting StyleS

Contextual Info: GC1713A-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10pì C1/C2 Min. Capacitance Ratio7.0 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.950 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: GC1713B-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10pì C1/C2 Min. Capacitance Ratio7.0 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.950 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: GC1713H-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10pì C1/C2 Min. Capacitance Ratio7.0 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.950 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: GC1700A – GC1720 TM CONTROL DEVICES 60 Volt Abrupt Junction Tuning Varactors RoHS Compliant DESCRI PT I ON K EY FEAT URES The GC1700 series varactors are silicon abrupt junction devices. They offer the highest Q and lowest series resistance available in a 60 Volt silicon varactor.

GC1713

Abstract: GC1700 GC1700A GC1701 GC1702 GC1703 GC1704 GC1705 GC1706 GC1720
Contextual Info: GC1700A – GC1720 TM CONTROL DEVICES 60 Volt Abrupt Junction Tuning Varactors RoHS Compliant DESCRIPTION KEY FEATURES The GC1700 series varactors are silicon abrupt junction devices. They offer the highest Q and lowest series resistance available in a 60 Volt silicon varactor.

varactor

Abstract: GC1700 GC1700A GC1701 GC1702 GC1703 GC1704 GC1705 GC1706 GC1707
Contextual Info: TOC Tuning Varactors 60 VOLT ABRUPT JUNCTION VARACTOR DIODES RATINGS DESCRIPTION The GC1700 series varactors are silicon abrupt junction devices. They offer the highest Q and lowest series resistance available in a 60 Volt silicon varactor. Minimum Voltage breakdown: 60 V at 10µA max

GC1700

Abstract: GC1700A GC1701 GC1702 GC1703 GC1704 GC1705 GC1706 GC1713
Contextual Info: .LORAL niCROIilAVE-FSI SIE D • 5SÖQ13D 0000455 OSO 60-VOLT SILICON TUNING VARACTORS DESCRIPTION The GC1700 series tuning varactors are silicon abrupt junction devices. They offer the highest Q and lowest resistance available in 60 volt tuning diodes. A unique silicon dioxide passivation process assures

GC1700

Abstract: GC1700A GC1701 GC1702 GC1703 GC1704 GC1705 GC1706 GC1707 Loral
Contextual Info: LORAL/FREÛUENCY/SEMICOND ND 96D 00 799 D 6O-VOLT ^ D • SSTTbEl 0000711 0 SILICON TUNING VARACTORS D E SC R IP T IO N The G C1700 series tuning varactors are silicon abrupt ¡unc­ tion devices. They offer the highest Q and lowest resistance available in 60 volt tuning diodes.

CT908

Abstract: 709ha c1913 GC1713 ha1711 C1706 Ct609 c1507 f709H MV167
Contextual Info: electronics inc. ce o le e MICROWAVE VARACTOR DIODES ABRUPT - HYPERABRUPT GC S * r ie t G C 1 5 0 0 -G C 151 4 GC1 $00*GC 1609 GC1 702-GC171 7 H A 1 7 0 2 -H A 1 7 1 7 M V 1 t 5 S 'M V 1 870 (GIGA-CAP HA ELEC T R IC A L CHARACTERISTICS (T a = 25°C unless otherwise noted)

C1708

Abstract: gc1602 GC1713
Contextual Info: \Æ HYPERABRUPT - ABRUPT UHF-MICROWAVE TUNING DIODES electronics inc designed for electronic tuning and control applications in the UHF and lower microwave frequency ranges. S E R IE S M V205 M V206 L P 1 0 1 4 -1 0 3 8 E P I Of 4 *1038 • LOW IN D U CTA N C E