GC1602 Search Results

Contextual Info: GC1602D-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2pì C1/C2 Min. Capacitance Ratio4.5 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: GC1602T-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2pì C1/C2 Min. Capacitance Ratio4.5 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I

Contextual Info: GC1602EE-+2 Diodes Dual Varactor Diode with Common Anode Ct{Cj} Nom. F Junction Cap.600fì C1/C2 Min. Capacitance Ratio4.5 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-T Mounting StyleS

Contextual Info: GC1602B-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2pì C1/C2 Min. Capacitance Ratio4.5 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: GC1602A-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2pì C1/C2 Min. Capacitance Ratio4.5 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: GC1602E-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2pì C1/C2 Min. Capacitance Ratio4.5 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: GC1602F-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2pì C1/C2 Min. Capacitance Ratio4.5 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I

Contextual Info: GC1602H-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2pì C1/C2 Min. Capacitance Ratio4.5 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew

GC1600

Abstract: GC1600A GC1601 GC1602 GC1603 GC1604 GC1605 GC1606 tsnh
Contextual Info: LO R A L / F R E d U E NC Y /S EI II CO ND N° _ m 96 D 0 0 796 D 7^-O ? - / ? 45"VOLT ^ » • SILICON TUNING VARACTORS S S 7 ci t i 5 1 0 0 D 0 7 T ti DESCRIPTION The G C 1 6 0 0 series tuning varactors are silicon abrupt ¡unc­ tion devices. They offer the highest Q and lowest resistance

Microsemi Catalog 2000

Abstract: GC1601 30 MHz phase shifters GC1600 GC1600A GC1602 GC1603 GC1604 GC1605 GC1606
Contextual Info: GC1600A – GC1613 TM CONTROL DEVICES 45 Volt Abrupt Junction Tuning Varactors RoHS Compliant KEY FEATURES DESCRIPTION • Highest Q for 45 Volt Varactors • Lowest Rs www.MICROSEMI.com The GC1600 series varactors are silicon abrupt junction devices. They offer the

Contextual Info: GC1600A – GC1613 TM CONTROL DEVICES 45 Volt Abrupt Junction Tuning Varactors RoHS Compliant K EY FEAT URES DESCRIPTION • Highest Q for 45 Volt Varactors • Lowest Rs www.MICROSEMI.com The GC1600 series varactors are silicon abrupt junction devices. They offer the

C1914

Contextual Info: GflSD electron ics m e G C S e r ie s ELECTRICAL CHARACTERISTICS (TA= 2 5 °C R i w m Breakdown Voltage ( min) Vr Reverse Voltage Leakage Current (max) Capacitance Temperature C oefficien t (typl unless otherwise noted) 30 V dc 9 I r = 1 0 u A d c T CC

varactor diode notes

Abstract: varactors GC1600 GC1600A GC1601 GC1602 GC1603 GC1604 GC1605 GC1606
Contextual Info: TOC Tuning Varactors 45 VOLT ABRUPT JUNCTION VARACTOR DIODES DESCRIPTION RATINGS: The GC1600 series varactors are silicon abrupt junction devices. They offer the highest Q and lowest series resistance available in a 45 Volt silicon varactor. Minimum Voltage breakdown: 45 V at 10 µA max

Contextual Info: TUNING VARACTORS 45-VOLT SILICON TUNING VARACTORS DESCRIPTION The GC1600 series tuning varactors are silicon abrupt junction devices. They offer the highest Q and lowest resistance available in 45 volt tuning diodes. A unique silicon dioxide passivation process assures