GC1601 Search Results

LM1000SGL

Abstract: tayeh capacitor solomon lcd display Solomon tayeh GC1601N0SKY1B GC160 pin diagram of lcd display Solomon Goldentek Display
Contextual Info: KAOHSIUNG FACTORY : 18 TA-YEH STREET, TA-FA INDUSTRIAL PARK, TA-LIAO HSIANG, KAOHSIUNG HSIEN 831 TAIWAN , R.O.C. TEL : 886-7-788-6800 FAX : 886-7-788-6806~8 PART NO : GC1601N0SKY1B LM1000SGL FOR MESSRS : CONTENTS NO. ITEM PAGE 1. COVER 1 2. RECORD OF REVISION

Contextual Info: GC1601D-+5 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.0pì C1/C2 Min. Capacitance Ratio4.4 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: GC1601E-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.0pì C1/C2 Min. Capacitance Ratio4.4 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: GC1601T-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.0pì C1/C2 Min. Capacitance Ratio4.4 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I

Contextual Info: GC1601D-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.0pì C1/C2 Min. Capacitance Ratio4.4 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

tayeh capacitor

Abstract: lm1000sgr SP10001 GC1601N GC1601N0SHN1B GC1601N0
Contextual Info: KAOHSIUNG FACTORY : 18 TA-YEH STREET, TA-FA INDUSTRIAL PARK, TA-LIAO HSIANG, KAOHSIUNG HSIEN 831 TAIWAN , R.O.C. TEL : 886-7-788-6800 FAX : 886-7-788-6806~8 PART NO : FOR MESSRS : GC1601N0SHN1B LM1000SGR CONTENTS NO. ITEM PAGE 1. COVER 1 2. RECORD OF REVISION

Contextual Info: GC1601A-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.0pì C1/C2 Min. Capacitance Ratio4.4 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: GC1601B-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.0pì C1/C2 Min. Capacitance Ratio4.4 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: GC1601EE-+2 Diodes Dual Varactor Diode with Common Anode Ct{Cj} Nom. F Junction Cap.500fì C1/C2 Min. Capacitance Ratio4.4 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-T Mounting StyleS

GC1601N0TSY1B

Abstract: LM1000TGL Solomon tayeh capacitor 40 pin lcd led GC1601
Contextual Info: KAOHSIUNG FACTORY : 18 TA-YEH STREET, TA-FA INDUSTRIAL PARK, TA-LIAO HSIANG, KAOHSIUNG HSIEN 831 TAIWAN , R.O.C. TEL : 886-7-788-6800 FAX : 886-7-788-6806~8 PART NO : GC1601N0TSY1B LM1000TGL FOR MESSRS : CONTENTS NO. ITEM PAGE 1. COVER 1 2. RECORD OF REVISION

Contextual Info: GC1601H-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.0pì C1/C2 Min. Capacitance Ratio4.4 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: GC1601F-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.0pì C1/C2 Min. Capacitance Ratio4.4 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I

GC1600

Abstract: GC1600A GC1601 GC1602 GC1603 GC1604 GC1605 GC1606 tsnh
Contextual Info: LO R A L / F R E d U E NC Y /S EI II CO ND N° _ m 96 D 0 0 796 D 7^-O ? - / ? 45"VOLT ^ » • SILICON TUNING VARACTORS S S 7 ci t i 5 1 0 0 D 0 7 T ti DESCRIPTION The G C 1 6 0 0 series tuning varactors are silicon abrupt ¡unc­ tion devices. They offer the highest Q and lowest resistance

Microsemi Catalog 2000

Abstract: GC1601 30 MHz phase shifters GC1600 GC1600A GC1602 GC1603 GC1604 GC1605 GC1606
Contextual Info: GC1600A – GC1613 TM CONTROL DEVICES 45 Volt Abrupt Junction Tuning Varactors RoHS Compliant KEY FEATURES DESCRIPTION • Highest Q for 45 Volt Varactors • Lowest Rs www.MICROSEMI.com The GC1600 series varactors are silicon abrupt junction devices. They offer the

C1914

Contextual Info: GflSD electron ics m e G C S e r ie s ELECTRICAL CHARACTERISTICS (TA= 2 5 °C R i w m Breakdown Voltage ( min) Vr Reverse Voltage Leakage Current (max) Capacitance Temperature C oefficien t (typl unless otherwise noted) 30 V dc 9 I r = 1 0 u A d c T CC

varactor diode notes

Abstract: varactors GC1600 GC1600A GC1601 GC1602 GC1603 GC1604 GC1605 GC1606
Contextual Info: TOC Tuning Varactors 45 VOLT ABRUPT JUNCTION VARACTOR DIODES DESCRIPTION RATINGS: The GC1600 series varactors are silicon abrupt junction devices. They offer the highest Q and lowest series resistance available in a 45 Volt silicon varactor. Minimum Voltage breakdown: 45 V at 10 µA max

Contextual Info: TUNING VARACTORS 45-VOLT SILICON TUNING VARACTORS DESCRIPTION The GC1600 series tuning varactors are silicon abrupt junction devices. They offer the highest Q and lowest resistance available in 45 volt tuning diodes. A unique silicon dioxide passivation process assures

CT908

Abstract: 709ha c1913 GC1713 ha1711 C1706 Ct609 c1507 f709H MV167
Contextual Info: electronics inc. ce o le e MICROWAVE VARACTOR DIODES ABRUPT - HYPERABRUPT GC S * r ie t G C 1 5 0 0 -G C 151 4 GC1 $00*GC 1609 GC1 702-GC171 7 H A 1 7 0 2 -H A 1 7 1 7 M V 1 t 5 S 'M V 1 870 (GIGA-CAP HA ELEC T R IC A L CHARACTERISTICS (T a = 25°C unless otherwise noted)