T4141 Search Results

power LED 650nm

Abstract: 1/Detector/"Detector IC"/"CD"/NSL-4960 NSL-4960 photoconductive cell cdse
Contextual Info: 5 OC 8255271 SILONEX INC SILO N EX SD IN C 0 0 2 1 9 _ 0 DE~Jfl25S271 t -4 1 -4 1 0 0 □□5 n 1 e] T r LU N tX TO-8 PHOTOCONDUCTIVE CELLS FEATURES NSL-2900, 3900, 4900 SERIES TO-8 • Th ree P h o to co n d u ctiv e M aterials • Po w er D issip atio n @ 25° C:

T6440M

Abstract: RCA-CA3058 T2850 RCA t2710 t6430d T2313 T2310 2N5446 T4151 T6420M
Contextual Info: 1 1 ZERO VOLTAGE SWITCH < o H < 31 7 * z o + STANOARO < o ID o 2 < s 3 > + 1.5 4 06 tn < O H < 05 -t* X» n £ o cn o c o o o c3 S Ì 7 2 > A 2 —1 2 to >J o -1 O KJ CT> 2 H 2 fO o a -1 4» KJ O H ? > : T + _ o ä 3 * ? .s < j !° Ï fi5 cn J3 Q >» ^ 05 4k 4k ro -»

M51VA

Abstract: IT8512E-L C4469 U4001D asus 2sc8802 25C0401 Q3705 C4477 G780
Contextual Info: A B C D E F6Ve SCHEMATIC Revision 1.0 1 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 CPU-PENRYN 1 CPU-PENRYN(2) CPU CAP, Thermal Senor

inmos T414

Abstract: Transputer T414 inmos transputer reference manual T414 inmos transputer link adapter Inmos t4142 Inmos transputer imst414 IMS T414
Contextual Info: mos Reference manual transputer i mos INMOS Limited PO Box 424 Bristol BS99 7DD England Telephone 0272 290861 Telex 444723 INMOS Corporation PO Box 16000 Colorado Springs CO 80935 USA Telephone (303) 630 4000 TWX 910 920 4904 INMOS GmbH Danziger Strasse 2

NSL445

Abstract: NSL-446 NSL447 la 4440 NSL446 NSL444 NSL-447
Contextual Info: SILONEX 50G 00225 DE |fl2SSE71 GOODSSS 4 SO INC 1 W ATT PHOTOCONDUCTIVE CELLS lì T-41-41 LONEX NSL-4400 SERIES FEATURES • High Power Dissipation Capability @ 25° C: 1000 mW - Hermetically Sealed 500 mW - Plastic Encapsulated 750 mW on demand* - Plastic Encapsulated

RCA-CA3058

Abstract: RCA t2710 T2850 RCA T2302 T2850 Series t2710 T4140 rca t2800 T4115 Series T8421 Series
Contextual Info: Application Inform ation Triacs Current Voltage ' t R M S a Range - V Package Series T ypical A pplications L OW-C URRENT SEN S ITIV E -G ATE 1.6 -2 .5 100400 Mod. T O -5 & M od. TO-5 w Rad. T 23 0 0 T2301 T 2302 T2310 T2311 T2312 IC C o n tro l C ircu it to Power C ontrol

Contextual Info: 4613315 HUGHES HUGHES AIR CR AF T A IR C R A F T CO/ SANTA 38C CO/ SANTA 3fl 00442 DE | 4U1331S A T-41-41 Dr □ 00 0 4 4 2 1 Detectors Mercury Cadmium Telluride PC IR Detectors H gCdTe (PC) 1012 * I il§ fa lil!a • B B B B II BSSUBSI C ES JE3B BB I m m um i

T41410

Contextual Info: SHEET O FT RECOMMENDED P.C.D LAYOUT FRO NT V IE W 2 Com J 1 3 EPOXY SEAL CIRCUIT: SPDT SW ITCH FUNCTION PDS. 1 pds. a * T 0.51 PDS. 3 ON OFF (ON) 2 -3 OPEN 2-1 3.30 0.51 [.020] TYP SW ITCH SUPPORT 0.41 [.016] THK (DN)=MDMENTARY NOTES: 3.86 [.152] 1. ALL DIMENSIONS IN MM[INCH]

T4148

Abstract: TIC 160 D sm 4109 TIC 160 M T-41410 TIC+160+M
Contextual Info: What H EW LETT 1 "KM PA CK A R D Silicon Bipolar Transistors Selection Guide NF0 and Ga are specified at a low noise bias point, while Pt dB, Gj dB, and IS2lEl- are specified at bias points which optimize these parameters. Low N oise Transistors Typical Specifications @ 25°C Case Temperature

t25 dc he nv

Contextual Info: ECL PRODUCT INFORMATION Test Voltage Values V v ih a MIN Vil a MAX -30 °C +25°C +85°C -0.890 -0.810 -0.700 -1.890 -1.850 -1.825 -1.205 -1.105 -1.035 -1.500 -1.475 -1.440 PARAMETER LOW LEVEL OUTPUT VOLTAGE LOW LEVEL VOH (V) HIGH LEVEL V0 LA <V> THRE8HOLD

T4141

Abstract: NSL384 NSL485 NSL4840 NSL-4810
Contextual Info: JB255271 SO S I LONE X INC DE^fl5SSH71 00DGS1Ô 7 T-41-41 NSL-3800, 4800 SERIES SILONEX TO-5 PHOTOCONDUCTIVE C E L L S TO-5 Silonex Part No. NSL-3810 NSL-3820 NSL-3830 NSL-3840 NSL-3850 NSL-3860 NSL-3870 NSL-4810 NSL-4820 NSL-4830 NSL-4840 NSL-4850 NSL-4860

T4151B

Abstract: bb200 2N5568 2N5570 2N5572 T4120M T4120D 2N5571 T4100M T4111M
Contextual Info: T R IA C S continued C urrent M a x. G ate Trigger RCA TY P E Package (R M S ) >TSM Tem p ., T p Voltage Tem p. Range Operating v DROM (See Current Io t -it i A C ritical R ate o f Rise of: C o m m u tatio n V oltage Modes d v /d t - V//us O ff-S tate Voltage

100 K ohm Trimmer Trim Pot Variable Resistor

Abstract: 100T0002 silver conductive ink resins 10K0H 00t0011 prob sensor moisture
Contextual Info: Until that far-off time when electronic circuits are perfect, you'll need to include variable resistors in your designs. D uring each o f the next 12 m onths. Bourns and EDN w ill bring you easy-to-read excerpts from o u r popular "Trim m er P rim e r" series. For m any o f you, the Trim mer ABG Program w ill be a refresher course; fo r

Thermistor 400k

Abstract: FR 302 Diode 1000 watts power amp circuit diagram ISC-302D ISC-302A ISC-302B ISC-302C ISC-302F
Contextual Info: 3 6 67320 FORO AERQSP» ÀERO N U T R O N I C FOR» AEROSPi ÀERONUTRONIC 43 r T-41-41 4 3C 00.264_ D. D E ~ j3 b t,7 3 2 D □ □□OEbM. û |~ InSb INFRARED DETECTORS ¿ w j Ford Aerospace & Communications Corporation E L E C T R O -O P T IC A L D E V IC E S

RCA-CA3058

Abstract: RCA T2806D T2710B T4706D t28500 T2850 T2302B triac t2850 T2304B T2801 TRIAC
Contextual Info: 400-HZ OPERATION < ISOWATT < O X o 2 < o O H 3 > < — M ounting Tl > < o H X 2 Cfl 4k Ni o o § n Z 2o o Q. ZERO VOLTAGE SWITCH Tl + Z + < O X o 2 < a -f 3 > < n STANDARD + tab electrically + + *> s CP CP 4k K o> o CP O o o o 8 o o H ro CP O 05 □ H KO

T4127M

Abstract: 2N5568 T6420M T6426 T8420D 2N5567 2N5570 2N5571 T4101M T4111M
Contextual Info: 1 1 ZERO VOLTAGE SWITCH < o H < 31 7 * z o + STANOARO < o ID s o 3 > + 1.5 406 tn < O H < 2 < 05 -t* X» o cn o c o o o c3 2 —1 -A 2 to ^1 >J ' J o c0 -1 O KJ CT> 2 H 2 fO o a -1 4» KJ O H ? > T n £ S Ì 7 > 2 : A z !° Ï fi5 cn + _ o ä 3 * ? .s < j

T4700D

Abstract: T2800B 2n5567 T4700B 2N5573 triac 100a t28500 T4151B T2312A T4115
Contextual Info: 400-HZ OPERATION < ISOWATT < O X o 2 < o O H 3 > < — M ounting Tl > < o H X 2 Cfl 4k Ni o o § n Z 2o o Q. ZERO VOLTAGE SWITCH Tl + Z + < O X o 2 < a -f 3 > < n STANDARD + tab electrically + + *> s CP CP 4k K o> o CP O o o o 8 o o H ro CP O 05 □ H KO

Contextual Info: 4613315 HUGHES AIRCRAFT CO/ 38C SANTA •HUGHES AIRCRAFT CO/ SANTA 3 fl DE | 0^ 00456 4^13315 T-41-41 00004S t £ ~V | Detectors Lead Selenide IR Detectors PbSe 10" ion 8fc&WilB*3E3BiB-— .—- - - 8BBss HHHHBBFT,:T r,i3 ^ E a ® H H M i

Contextual Info: 4613315 HUGHES HUGHES AIRCRAFT AIRCRAFT CO/ CO/ SANTA. SANTA 3fl 38C 00454 DE | 4U13315 ~W T-41-41 0000454 1 ^ | Detectors D* Amax, 90 (cmHz'fyW) (ITO and LTO) D* (Amax, 780) (cmHzy7W) (ATO) Lead Sulfide IR Detectors PbS 1012 1012 • ■ ■ ■ ■ ■ n ra E n n a m m

4445a

Abstract: AT-41411 AT-41411-BLK AT-41411-TR1 transistor 41 74t 74t marking
Contextual Info: * W hat H E W L E T T mL/im P A C K A R D Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41411 F eatu res to-em itter pitch enables this tran sisto r to be used in m any different functions. The 14 em itter finger interdigitated geom etry

HgCdTe

Abstract: long range metal detector D05E BARNES ENGINEERING metal detector D10S H11E Nitrogen Relief Valve 15X10 Helium liquid Dewar
Contextual Info: Bulletin 2-360C BARNES . The Lead Tin Telluride Infrared Detector utilizes intrin­ sic photodetection in single-crystal, lead tin telluride PbSnTe material. Barnes now offers two types of PbSnTe detectors. The first type is liquid nitrogencooled and provides optimum sensitivity throughout the

InSb spectral response

Abstract: BARNES ENGINEERING metal detectors circuit D13E metal detector 140C D03E D04EJ D05E Barnes Engineering Company
Contextual Info: F D P CORP. BARNES ENGRG E D 0 CO RP/ BARNES ENGRG _ _4 5 C 0 0 4 5 2 4S DE .jB O S T b S S D . T-41-4r 0D0D4Sa 0 |~ Bulletin 2-312 BARNES Barnes Engineering Company 30 Commerce Road Stamford, Connecticut 06904 Telephone 203 348-5381 The most sensitive detectors in the near infrared

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete

E421 fet

Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Contextual Info: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.