T3D DIODE Search Results

1N914

Contextual Info: T3D J> • ALLEGRO MICROSYSTEMS INC D50433fl 00037^5 0 ■ ALGR PROCESS TTU Process TTU High-Speed Switching Diode A gold-doped silicon epitaxial diode used primarily in high-speed switching applications, Process TTU, with its P-type substrate, is the N P counterpart of PN

T3D 67 diode

Abstract: t3d diode BS6301 EFT 377 A LOA21 T3D 67 T3D 80 diode BS415 BS7002 LDA100
Contextual Info: CLARE CORPORATION bbE ]> H 2144^04 DDODPDfi T3D M C P C L Clirreilt SenSOTS Solid State Products D ivision • CPCIare C P / SOLID STATE • Solid State Current Sensors DESCRIPTION CP C lare's LDA series solid state current sensors provide an optically isolated

E76270

Abstract: T3D 67 diode t3d diode transistor c 2500 BS415 BS6301 BS7002 LDA100 LDA101 LDA110
Contextual Info: CLARE CORPORATION bbE ]> H 2144^04 DDODPDfi T3D M C P C L Clirreilt SenSOTS Solid State Products D ivision • CPCIare C P / SOLID STATE • Solid State Current Sensors DESCRIPTION CP C lare's LDA series solid state current sensors provide an optically isolated

501C

Contextual Info: CLARE CP Ciane C P / S OL I ] ) STATE bbE D H E mM 'i D M DDOOPGfl T3D • C P C L Clirreilt SenSOrS Solid State Products Division CORPORATION Solid State Current Sensors DESCRIPTION CP Clare's LDA series solid state current sensors provide an optically isolated

t3d 57

Abstract: T3D 88 t3d diode T3D 89 Diode T3D 57 GC5510 gc5514g paramp T3D 45 diode GC5511A
Contextual Info: LO RA L niCROülAVE-FSI SIE D • 5 5 0 0 1 3 0 G O O G M ? ! T3D ■ GaAs PARAMETRIC AM PLIFIER VARACTORS DESCRIPTION FEATURES The GC5510 series paramp varactors are diffused junction gal­ lium arsenide devices featuring the lowest series resistance and

indium gallium arsenide phosphide

Abstract: 090Q PREAMPLIFIER TRANSIMPEDANCE optic fet C30617 C30986-010 C30986-090QC-01 C30986-350 35XL 30306 3008D2
Contextual Info: E 6 & 6 / C A N A D A / O P T OELEK I t C / € l 3030bl0 000ülb3 ID T3D * C A N A InGaAs Photodiodes C30986 Series DATA SHEET Optics For Detection of 1000 to 1700 nm Radiation Transimpedance Preamplifier Modules With or Without Integral Fiber Optic Pigtails

T3D DIODE

Abstract: T3D 45 diode diode T3D diode T3D 25 T3D 40 DIODE Diode T3D 08 T3D 18 diode T3D 77 diode Diode T3D 30 Diode T3D 35
Contextual Info: S P RAG UE /S EM IC ON D GROUP 8 5 14019 SPRAGUE, D • S E M I C O N D S / ICS 0513550 0003b27 S 93 D 0 3 6 2 7 SMALL-OUTLINE DIODES i ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type »rr Max. ns

T3D 75 diode

Abstract: T3D DIODE
Contextual Info: SPRAGUE/SEMICOND GROUP 8 5 1 4 0 1 9 SPRAGUE. ^3 D • ÖS13ÖS0 S E M I C O N D S / ICS G003bn 3 ■ 93D 03619 H fö f-O S DIODE CHIPS ‘THD’ Photodiodes ELECTRICAL CHARACTERISTICS at TA = 25°C Id Vbr Device Type THD9751 THD9752 II* Min. V (CtlR (l*A)

T3D 46 diode

Abstract: Diode T3D 56 T3D 65 diode Diode T3D 08 Diode T3D 38 T3D 49 diode t3d 56
Contextual Info: SIEMENS BYP 300 Preliminary data FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type Vrrm ^FRMS irr Package Ordering Code BYP 300 1200V 6.5A 55ns TO-218AD C67047-A2250-A2 Maximum Ratings Parameter Symbol Mean forward current

Contextual Info: SPRAGUE/SEMICOND GROUP 85 14 0 19 SPRAGUE. T3 D • 0513050 ÜDQ3blô 1 ■ S E M I C O N D S / ICS 9 3 D 036 18j> " 0 I " ^ DIODE CHIPS ‘THD’ Rectifiers and General-Purpose Diodes ELECTRICAL CHARACTERISTICS atTA = 25°C vF Device Type THD457 THD458A

T3D 54 DIODE

Abstract: Diode T3D 54 T3D 81 DIODE T3D DIODE T3D 83 DIODE diode T3D 25 Diode T3D 41 CIRCUIT T3D 28 diode MG300M1UK1 T3D 18 diode
Contextual Info: WEST CODE S EMI C OND U CT O RS WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single

Diode T3D 64

Abstract: T3D 62 T3D zener DIODE T3D 25 t3d 62 diode T3D DIODE T3D zener DIODE diode zener t3d 25 T3D 64 diode T3D 75 diode T3D 64
Contextual Info: SPRAGUE/SEMICOND Ô S 1 4 0 1 9 SPRAGUE. GROUP 13 D • ÔS13ÔSG S E M I C O N D S / ICS 00D3b2S 93D 03625 1 ■ iTT-Z^S DIODE CHIPS ‘THZ’ Temperature-Compensated Zener Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C 0 Temp. Coefficient (±ppm/°C)

T3D DIODE

Abstract: T3D 36 diode T3D 43 diode T3D 28 DIODE Diode T3D 24 Diode T3D 44 T3D 34 diode Kodak KAI 2000 T3D 21 diode T3D 37 DIODE
Contextual Info: Performance Specification KAI-2093M KAI - 2093M 1920 H x 1080 (V) Pixel Megapixel Interline CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650-2010 Revision 2 February 11, 2002 Eastman Kodak Company – Image Sensor Solutions

t3d diode

Abstract: KAI-2093M KAI-2093 T3D 55 diode marking t3d T3D 01 DIODE T3D 28 T3D 17 diode
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 3.0 MTD/PS-0307 March 19, 2007 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

DIODE T3D 95

Abstract: t3d diode T3D 34 diode kai-2093cm T3D 01 DIODE T3D 28 DIODE 360NM diode marking code t3d kai image sensor diode marking t3d
Contextual Info: KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR JULY 13, 2012 DEVICE PERFORMANCE SPECIFICATION REVISION 1.0 PS-0026 KAI-2093 Image Sensor TABLE OF CONTENTS Summary Specification . 5

T3D DIODE

Abstract: T3D DIODE clamp diode T3D KAI-2093 kai-2093cm Diode T3D 44 T3D 34 Kodak KAI 2000 T3D 55 diode Diode T3D 55
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 4.0 MTD/PS-0307 June 11, 2010 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

Contextual Info: KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR JUNE 11, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 1.1 PS-0026 KAI-2093 Image Sensor TABLE OF CONTENTS Summary Specification . 5

T3D 35 zener DIODE

Abstract: T3D zener DIODE t3d 99 diode diode zener t3d 23 T3D 91 DIODE T3D 95 Diode T3D 82 T3D 65 diode T3D 82 diode ZENER DIODE T3D
Contextual Info: SPR AGU E/SENIC OND GROUP 8 5 1 4 0 1 9 SPRAGUE. 13 D • 0513050 0003b54 7 ■ 93D 0 3624 I S E M I C O N D S /ICS DIODE CHIPS T H Z ’ S eries ‘W Zener Diodes ELECTRICAL CHARACTERISTICS at Tfl = 25°C Device Type Min. V Nom. (V) Max. (V) («Iff (mA)

Diode T3D 82

Abstract: T3D DIODE Diode T3D 08 Diode T3D 26 T3D 65 diode T3D 82 diode Diode T3D 27 diode T3D 24 T3D 82 T3D 28 DIODE
Contextual Info: MF7643 4-Channel High-Speed Non-Inverting 15 M H z Input Bandwidth 8-Bit DACs with Outpul EJuffers and Parallel Digi :al Data Port M M icro Power System s FEATURES • DACs Matched to ±0.5% typ • Low Harmonic Distortion: 0.25% ypical with VREF = 1 V p - p 0 1 MHz

t3d diode

Abstract: Diode T3D 64 T3D 65 diode T3D 64 diode Diode T3D 03 T3D 89 DIODE T3D 55 diode diode t3d 663 t03 T3D 28 diode
Contextual Info: 711GöSb □Q4Db71 Ib ö • PHIN SbE D P H IL IP S INTERNATIONAL B YV28 SERIES SbE » EPITAXIAL AVALANCHE DIODES Glass passivated epitaxial rectifier diodes in hermetically sealed axial-leaded glass envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching

T3D zener DIODE

Abstract: T3D 63 ZENER DIODE ZENER DIODE T3D T3D zener T3D 87 T3D 47 diode T3D 66 diode T3D 19 zener DIODE T3D 15 zener DIODE Diode T3D 56
Contextual Info: SP RA GUE /S EMIC OND GROUP 8 5 14 01 9 SPRAGUE. =13 D • Ô513Ô5D 0D03bE2 3 ■ S E M I C O N D S / ICS 93D 03622 p T '/S-C S DIODE CHIPS ‘THZ’ Series ‘B’ Zener Diodes ELECTRICAL CHARACTERISTICS atTfl = 25°C Leakage Current Zener Voltage Zener Impedance

T3D 29 zener DIODE

Abstract: diode zener t3d 23 T3D 67 diode T3D 58 diode T3D zener DIODE T3D 83 DIODE T3D 81 DIODE T3D 98 diode Diode T3D 57 Diode T3D 81
Contextual Info: SPRAGUE/SEMICOND 85 14 01 9 SPRAGUE. GROU P TB D • Ô513ÔSG S E M I C O N D S / ICS ÜQD3bEG T ■ 93 D 0 3 6 2 0 T ~ t f ~ Q t t DIODE CHIPS / ‘THZ’ Series ‘A ’ Zener Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C

2SK2352

Contextual Info: TOSHIBA Discrete Semiconductors 2SK2352 Field Effect Transistor Unit in m m Silicon N Channel M O ST ype m-MOS IV High Speed, High Current Switching, DC-DC Converter Chopper Regulator and Motor Drive Applications Features • 4V Gate Drive • Low Drain-Source ON Resistance

T3D diode

Abstract: T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30
Contextual Info: Ju n e 1996 National Semiconductor ” NDT451N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.