T3D 53 Search Results

T3D 55

Abstract: 07E-07
Contextual Info: ALLEGRO MICROSYSTEMS INC T3D D • 0504336 0003713 S ■ ALGR PROCESS SKL Process SKL NPN Small-Signal Transistor The S K L Process produces double-diffused, NPN silicon epitaxial planar transistors intended for use in general-purpose amplifier or switching applications

Contextual Info: b5E D TOKO AMERICA/ SIGNAL SIGNAL PROCESSING TECHNOLOGIES flEMÖTl? DDÜB2SÖ T3D « S P T SPT78 I O 10-BIT, 20 MSPS, ECL OUTPUT A/D CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • Monolithic 20 MSPS Converter On-Chip Track/Hold

T3D+53

Abstract: t3d 05 T3D 53
Contextual Info: SPRAGUE/SEMICOND GR OU P T3 85 14 01 9 SPRAGUE. D • 0513050 OGGBSTfl T ■ S E M I C O N D S / ICS D 93D 03598 PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain IcBO Device Type

t3d 66

Abstract: T3D 64 737 s1g t3d 29 T3D 90
Contextual Info: DISC CERAMIC CAPACITORS T U S O N IX S T Y L E N U M B E R M A X I M U M D IA M E T E R D L E A D S P A C IN G (S ) W IR E G A U G E (A W G ) T E M P E R A T U R E C O M P E N S A T IN G E X T E N D E D T E M P E R A T U R E C O M P E N S A T IN G G EN ERAL PU RPO SE

Contextual Info: DISC CERAMIC CAPACITORS TU SO N IX S T Y LE N U M B ER M A X IM U M D IA M E T E R D L E A D S P A C IN G (S) W IR E G A U G E (A W G ) TEMP. CHAR. CODE N T E 5. (% ) MIN TC TOL 858 878 818 848 828 3848 3858 3878 3888 .4 5 7 / 11.61 .5 1 0 / 1 2 .9 5 .6 1 3 / 1 5 .5 7

TY527

Abstract: panduit 22CC37 WIT-50 t3d 18 n 308 al T3D 6 TY35/535/5354 TYTO PLM-24
Contextual Info: CROSS REFERENCE BY SERIES CABLE TIES NTE 04-xx18 04-xx40 04-xx50 04-xx120 04-xx175 ACT AL-xx-18 AL-xx-40 AL-xx-50 AL-xx-120 AL-xx-175 Catamount L-xx-18 L-xx-30/-40 L-xx-50 L-xx-120 L-xx-175 GB 46-1 46-2 46-3 NA 46-4 Panduit PLTxM PLTxI PLTxS PLT2H/4H PLT6H

Contextual Info: CROSS REFERENCE BY SERIES CABLE TIES NTE 04-xx18 04-xx40 04-xx50 04-xx120 04-xx175 ACT AL-xx-18 AL-xx-40 AL-xx-50 AL-xx-120 AL-xx-175 Catamount L-xx-18 L-xx-30/-40 L-xx-50 L-xx-120 L-xx-175 GB 46-1 46-2 46-3 NA 46-4 Panduit PLTxM PLTxI PLTxS PLT2H/4H PLT6H

T3D 53

Abstract: t3d 57
Contextual Info: C02E9.pdf 02.4.27 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage storageand andoperating, operating,rating, rating,soldering solderingand andmounting, mounting,handling handling)ininthis thisPDF

Diode T3D 54

Abstract: T3D 53 diode T3D 53 Diode T3D 55 LLL185 t3d 54 T3D 55 diode C02E10 LLL216 LLL219
Contextual Info: C02E10.pdf 04.1.20 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF

473 capacitor

Abstract: t3d 54 T3D 53 AR230
Contextual Info: C02E10.pdf 03.9.2 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF

Kodak KAI 2000

Abstract: t3d 99 KAI-4000M kodak ccd KAI-4000 ccd image area sensor 120 fps "saturation value" kodak kai t3d+99
Contextual Info: Performance Specification KAI-4000M KAI - 4000M 2048 H x 2048 (V) Pixel Megapixel Interline CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650-2010 Revision 1 December 20, 1999 Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010

Contextual Info: 500 VOLT TUSONIX 801 M A X IM U M D IA M E T E R D 235/596 290/737 360/9 14 437/12 45 490/12 45 593/15 06 675/17 15 750/1905 800/2032 857/22 23 937/23 80 1 100/27 94 L E A D S P A C IN G (S ) 200/508 250/635 250/635 250/6 35 250/6 35 375/9 52 375/9 52 375/952

Contextual Info: N AMER P H I L I P S / D I S C R E T E b'lE D bb 5 3^ 31 □D3fi3fl? SOT H A P X Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2525A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in

T3D 53

Abstract: t3d 54 T3D 38 fl03
Contextual Info: HN29W3221 Series Preliminary Product Preview 4M word x 8-bit CMOS AND Flash Memory HITACHI The Hitachi HN29W 3221 is a 4M word x 8-bit C M O S Flash Memory, realizing on-board programming. It programs or erases data with only on-board power supply 3.3V V c c supply . It dose

85310AYI-01LF

Abstract: ICS5310I-01 ICS85310AYI-01 ICS85310I-01 MC100LVEP111 MS-026 ICS85310-01 85310AYI-01LFT
Contextual Info: ICS85310I-01 LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-3.3V, 2.5V LVPECL/ECL FANOUT BUFFER General Description Features The ICS85310I-01 is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V ECL/LVPECL HiPerClockS Fanout Buffer and a member of the HiPerClockS™

T3D 77

Abstract: OM7612NM Adjustable negative Voltage Regulator 50v LM137HV T3D 42
Contextual Info: OM7612NM SURFACE MOUNT 1.5 AMP HIGH VOLTAGE NEGATIVE ADJUSTABLE REGULATOR Three Terminal, High Voltage, Precision Adjustable Negative Voltage Regulator In Hermetic Surface Mount Package FEATURES • • H erm etic S u rfac e M o un t P a c k a g e A d justab le O utp u t V o ltag e

Contextual Info: W ie tm v i V 1 U a W ill A DISC CERAMIC CAPACITORS TUSONIX STYLE NUMBER 861 831 801 M A X IM U M 2 3 5 / 5.96 2 9 0 /7 37 .3 6 0 / 9.14 2 0 0 /5 00 . 2 50 /6 2 5 0 /6 35 . 250 / 6.35 250 / 6 . : 5 . 3 75 / 9.52 22 22 22 22 D IA M E T E R D L E A D S P A C IN G (S)

Contextual Info: Low Skew, 1-to-10 Differential-to-3.3V, 2.5V LVPECL/ECL Fanout Buffer ICS85310I-01 DATA SHEET General Description Features The ICS85310I-01 is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V ECL/LVPECL Fanout HiPerClockS Buffer. The CLKx, nCLKx pairs can accept most

T3D 34

Abstract: T3D 67 T3D 87 t3d 99 T3D 79 t3d 96 T3D 64 T3D 63 Tusonix u1g 007
Contextual Info: DISC CERAMIC CAPACITORS TUSONIX Ceramic capacitors, because of their inherent reliability, small size, low cost and wide choice of elec­ trical characteristics available, now outsell all other types combined. TUSONIX manufactures both fixed and variable ceramic capacitors in

Contextual Info: C jT O fc D 124-Position 4 x 6 Header 2> ^ l£) I <£><N I nimni in n ii_ in m i niinii. Ä] 7] (7 7 7 7 7 7 ^ ^ [• 86 (3.386) iH m n II U U II U U 24 (HD Ti ADD U U II II U II II U U 11 Ü II II 1918 13 12 7 U U II II II II 6 F 1 contact No. 75.82 (2.985)

T3D 35 zener DIODE

Abstract: T3D zener DIODE t3d 99 diode diode zener t3d 23 T3D 91 DIODE T3D 95 Diode T3D 82 T3D 65 diode T3D 82 diode ZENER DIODE T3D
Contextual Info: SPR AGU E/SENIC OND GROUP 8 5 1 4 0 1 9 SPRAGUE. 13 D • 0513050 0003b54 7 ■ 93D 0 3624 I S E M I C O N D S /ICS DIODE CHIPS T H Z ’ S eries ‘W Zener Diodes ELECTRICAL CHARACTERISTICS at Tfl = 25°C Device Type Min. V Nom. (V) Max. (V) («Iff (mA)

T3D diode

Abstract: T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30
Contextual Info: Ju n e 1996 National Semiconductor ” NDT451N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

T3D 87

Contextual Info: International p R e c li Í 1er 22GQ100 SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Characteristics Description/Features The 22GQ100 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic isolated

BF 830 transistor

Contextual Info: TIP42F; 42AF TIP42BF; 42CF _ / V . SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are TIP41F, TIP41AF, TIP41BF and TIP41CF.