T1P30 Search Results

transistor B 764

Abstract: P1D8 179502 P3003 T1P3003028-SP 012673 0823838
Contextual Info: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3003028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.

T1P3005028-SP

Abstract: 50w transistor RF power transistor
Contextual Info: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3005028-SP 50W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction Table 1. M axim um Ratings Sym The T1P3005028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed

Contextual Info: TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF J SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, fo r use in audio output stages and for general purpose amplifier and high-speed switching applications.

TIP-30B

Abstract: tip30
Contextual Info: TIP30 S E R IE S TIP30/30A/30B/30C PNP EPITAXIAL SILICON TRAN SISTO R MEDIUM POW ER LINEAR SWITCHING APPLICATIONS • Complement to TIP29/29A/29B/29C ABSO LU TE MAXIMUM RATINGS Characteristic Collector Emitter Voltage : T1P30 : TIP3QA Symbol Rating Unit

RF POWER TRANSISTOR

Abstract: T1P3002028-SP transistor jc 817
Contextual Info: T1P3002028-SP 20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 20watts across

transistor sc 1972

Abstract: TIP3055 TIP2955 NPN power transistor TIP2955 transistor PNP TIP2955 texas instruments tip3055
Contextual Info: TIP2955 PNP SILICON POWER TRANSISTOR _ JA N U A R Y 1972 • R E V IS E D M AY 1995 • Designed for Complementary Use with the T1P3055 Series • 90 W at 25°C Case Temperature • 15 A Continuous Collector Current SOT-93 PAC KAG E

transistor B 764

Abstract: 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 T1P3002028-SP powerband N4030
Contextual Info: TriQuint It TM PO W ER BAN D SEMICONDUCTOR T1P3002028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.

transistor 746

Contextual Info: T1P3003028-SP 30 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 30watts across

pHEMT transistor 360

Abstract: "RF Power Transistor" T1P3005028-SP
Contextual Info: T1P3005028-SP 50 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3005028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 50watts across

30df

Abstract: AI mm sot 553 TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF TIP30CF TIP30DF
Contextual Info: TIP30F TIP30AF; TIP30BF ^ T1P30CF; TIP30DF SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S O T 1 8 6 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

I8212

Contextual Info: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL 5 bE D I 7 1 1 DflEb [IDM3 4 bb 7 G 0 « P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.

2n6125

Contextual Info: Power Transistors TYPE POLA­ NO. RITY M AXIM UM RATINGS CASE Pd IC VCEO mW (A) (V) H FE VCE(sat) min max IT CO M P L E ­ IC VCE max IC min MENTARY (mA) (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

30BF

Abstract: TIP30DF TIP3 TIP29AF TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF
Contextual Info: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL Sb E D I 7110ä2b 00M34bb 700 « P H I N SILICON EPITAXIAL POWER TRANSISTORS T - & - IT PNP silicon power transistor in a S O T 186 envelope w ith an electrically insulated mounting base, for use in audio output stages and for general purpose am plifier and high-speed switching applications.

T1P3055

Abstract: t1p29 CSD1047 TIP295 CSD1047Y
Contextual Info: r-B OIM A C £ F G H K L M N P C- MIN. 17.75 5.2 3.8 0 1.9 14,50 33.25 20.75 11.50 1.0 18.75 0 .4 0 3.15 5.21 MAX. 18*25 5.7 4.2 0 2.1 15.10 36.75 21.25 12.25 1.30 21.65 0.60 3.45 5.72 1. 2. 3. B A SE CO LLECTO R EM ITTER A LL DIM ENSIO NS A R E IN M.M. TO BE MOUNTED WITH SIUCONE GREASE ON THE BACK SIDE.

LM1011N

Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
Contextual Info: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44

Contextual Info: INTRODUCTION PLASTIC ENCAPSULATED TRAN SISTO RS TRI ACS AND THYRISTO RS This catalogue provides technical descriptions and specifications on Plastic Power Semiconductors manufactured by Texas Instruments. From the earliest days o f transistors Sem iconductor C ircuit Designers have

jrc386d

Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Contextual Info: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

1n52408

Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which