T17 PC Search Results

CS12

Abstract: CX16
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CX16

Abstract: CS12
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CS12

Abstract: CX16
Contextual Info: -=> 产品总汇 >>其它传感器 >>其它传感器 - 霍尔传感器>>T17 霍尔传感器>>T17 系列霍尔传感器>>FT17 系列霍尔传感器>>FT17>>FT17-D10PH 浏览次数：5 -=> 产品图片 会员价: 欲知价格请登陆 主要技术参数 工作电压：

Contextual Info: TECHNICAL DATA SHEET - Draft SnapN 50 Ω 53QS101-273N3 STRAIGHT PLUG All dimensions are in mm; tolerances according to ISO 2768 m-H Interface Compatible to IEC 60169-16, MIL-PRF-39012, CECC 22210 Documents Assembly instruction 53 T17 Material and plating

Transformer 500 volt to 24 a c 24 dc 240 ac volt

Abstract: P575
Contextual Info: C OMPUT ER PRDTS/ POWER T=IC D • 2313103 OOQD3bP T17 ■ CPR T ' 57' ° 5 SPECIFICATIONS All Specifications Typical at Nominal Line, Full Load and 25°C Unless Otherwise Noted. OUTPUT SPECIFICATIONS MED 300/500 SERIES Single, Dual and Triple Outputs ■

transistor 6c x

Abstract: T17 pc
Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DPT-020-105 PT204-6C/T17 ECN: REV: Page: Package Dimensions: Office: NO 25,Lane.76, Chung Yang Rd., Sec.3, Tucheng, Taipei 236, Taiwan, R.O.C. TEL: 886-2-2267-2000,2267-9936 22Lines FAX: 886-2-2267-6189

EDL5132CBMA

Abstract: b008m
Contextual Info: PRELIMINARY DATA SHEET 512M bits Mobile RAM MCP 2 pcs of 256Mb components EDL5132CBMA 16M words x 32 bits Description Pin Configurations The EDL5132CBMA is a 512M bits Mobile RAM MCP (Multi Chip Package) organized as 4,194,304 words × 32 bits × 4 banks, 2 pieces of 256M bits Mobile RAM in

nt5sv8m16fs-6k

Abstract: Nanya NT5SV8M16FS NT5SV8M16FS NANYA Nanya NT5SV8M16FS-75Bi NT5SV8M16FS-6KI NT5SV8M16FS-75BI NT5SV8M16FT NT5SV8M16FS-75B NT5SV8M16FT-6K
Contextual Info: NT5SV8M16FS / NT5SV8M16FT 128Mb Synchronous DRAM • • • • • • • • • • • • Features • High Performance: Maximum Operating Speed CAS Latency PC166 6K/6KI PC133 (75B/75BI) 2 7.5 10 ns 3 6 7.5 ns • • • • • Single Pulsed RAS Interface

NT56V6610C0T-75

Abstract: NT56V6610C0T-8A NT56V6610C0T NT56V6610C0T-75B NT56V6610C0T-8B NT56V6620C0T
Contextual Info: NT56V6610C0T NT56V6620C0T 64Mb : x8 x16 PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.1 April, 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

NT5SV8M16FS

Abstract: Nanya NT5SV8M16FS NT5SV8M16FS-75BI Nanya NT5SV8M16FS-75Bi NT5SV8M16FS-6KI NT5SV8M16FT NT5SV8M16FT-6KI nt5sv8m16fs-6k 54-PIN NT5SV8M16FT-6K
Contextual Info: NT5SV8M16FT-6KI NT5SV8M16FS-6KI NT5SV8M16FT-75BI NT5SV8M16FS-75BI 128Mb Synchronous DRAM • • • • • • • • • • • • Features • High Performance: Maximum Operating Speed CAS Latency PC166 6KI PC133 (75BI) 2 7.5 10 ns 3 6 7.5 ns •

NT56V6610C0T-8A

Abstract: nanya part guide 56 NT56V6610C0T-8B NT56V6610C0T-75B NT56V6610C0T NT56V6610C0T-75 NT56V6620C0T NT56V6620C0T-8A
Contextual Info: NT56V6610C0T NT56V6620C0T 64Mb : x8 x16 PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.1 June, 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

T17 motorola

Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

la7358

Abstract: Reference sine wave s13 package SW21B
Contextual Info: Ordering number : ENA0638 Monolithic Linear IC LA7358 For VCR SECAM Chroma Signal Processor Overview LA7358 is a VCR-use SECAM chroma signal processor. Function • 4.3MHz BPF • 1.1MHz BPF • Limiter • AGC in PB mode • 4-divide circuit • 4-fold circuit

Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

EM636165

Contextual Info: EtronTech EM636165 1Mega x 16 Synchronous DRAM SDRAM (Rev.3.2, Nov./2007) Features Fast access time: 4.5/5/5/5.5 ns Fast clock rate: 200/183/166/143 MHz Self refresh mode: standard and low power Internal pipelined architecture 512K word x 16-bit x 2-bank

EM638165TS

Abstract: COMMAND EM638165
Contextual Info: EtronTech EM638165 4Mega x 16 Synchronous DRAM SDRAM (Rev 1.9, 04/2007) Features • • • • • • • • • • • • • Key Specifications Fast access time from clock: 4.5/5/5.4 ns Fast clock rate: 200/166/143 MHz Fully synchronous operation

sdram 1m x 4x 32

Abstract: EM636165 EM636165TS
Contextual Info: EtronTech EM636165 Industrial 1Mega x 16 Synchronous DRAM SDRAM (Rev.3.1, Jul/2007) Features Fast access time: 5/5.5 ns Fast clock rate: 166/143 MHz Self refresh mode: standard and low power Internal pipelined architecture 512K word x 16-bit x 2-bank Programmable Mode registers

T431616D-5S

Abstract: T431616E
Contextual Info: tm TE CH T431616D/E SDRAM 512K x 16bit x 2Banks Synchronous DRAM FEATURES GRNERAL DESCRIPTION Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Internal pipelined architecture • 512K word x 16-bit x 2-bank

T4312816B

Contextual Info: tm TE CH T4312816B SDRAM 2M x 16bit x 4Banks Synchronous DRAM 8M x 16 SDRAM FEATURES GRNERAL DESCRIPTION • The T4312816B SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a

lr transistor t7

Abstract: Q 72 t5 T436416D
Contextual Info: tm TE CH T436416D 4M x 16 SDRAM SDRAM 1M x 16bit x 4Banks Synchronous DRAM FEATURES GRNERAL DESCRIPTION • Fast access time from clock: 4.5/5/5.4 ns • Fast clock rate: 200/166/143 MHz • Fully synchronous operation • Internal pipelined architecture • 1M word x 16-bit x 4-bank

AS4C16M16S

Abstract: 3MA18 AS4C16M16S-6TCN AS4C16M16S-7BCN AS4C16M16S-5TCN
Contextual Info: FEBRUARY 2011 AS4C16M16S 256Mb / 16M x 16 bit Synchronous DRAM SDRAM Alliance Memory Table 1. Key Specifications AS4C16M16S tCK3 Clock Cycle time (min.) tAC3 Access time from CLK (max.) tRAS Row Active time (min.) tRC Row Cycle time (min.) Features • •

Contextual Info: VIS VG3617801CT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617801CT is CMOS Synchronous Dynamic RAMs organized as 1,048,576-word X 8-bit X 2bank. It is fabricated with an advanced submicron CMOS technology and is designed to operate from a single 3.3V power supply. This is packaged using JEDEC standard pinouts and standard plastic TSOP.

Contextual Info: 57P SERIES CENTRONIC PCB MOUNT Straight MATERIAL Blue PBT UL 94V-0 Phosphor Bronze Gold Over Nickel (see "Plating" below) Nickel Over Steel Tin Over Brass Insulator: Contact: Contact Plating: Shell: Board Locks: SPECIFICATIONS Current Rating: Insulator Resistance:

VG36128161

Abstract: VG36128161A VG36128401A VG36128801 VG36128801A
Contextual Info: VIS Preliminary VG36128401A VG36128801A VG36128161A CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 8,388,608 - word x 4 -bit x 4 - bank, 4,194,304 - word x 8 - bit x 4 - bank, or 2,097,152 - word x 16 - bit x 4 - bank. These various organizations