T1521 Search Results

Contextual Info: in te l M80C51FB CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER MiHtary M80C51FB — 3.5 MHz to 12 MHz, VCc = 5V ± 10% M80C51FB-16 — 3.5 MHz to 16 MHz, Vcc = 5V ± 10% High Performance CHMOS EPROM 32 Programmable I/O Lines Three 16-Bit Timer/Counters 7 Interrupt Sources

00A75

Abstract: INTEL Core i7 860 J 80222 lm 6358 J1 3009-2 271121 Texture mapping CC1105 Intel i860
Contextual Info: P K H IL D fiflD M M V MILITARY i860 XR 32/64-BIT MICROPROCESSOR • Parallel Architecture that Supports Up to Three Operations per Clock — One Integer or Control Instruction per Clock — Up to Two Floating-Point Results per Clock ■ High Performance Design

ctx02-16076

Abstract: CTX02 CTX02 16076 ultrasound TRANSFORMER P-Channel Depletion Mosfets pwm lm2903 logic SOT-23 Depletion Mode mosfet TN2106K HV738DB1 HV748DB1
Contextual Info: Supertex inc. AN-H59 Application Note High Voltage DC/DC Converter for Supertex Ultrasound Transmitter Demoboards By Afshaneh Brown, Applications Engineer, and Jimes Lei, Applications Manager Introduction The Supertex AN-H59DB1 demoboard is a high voltage

attansic f1

Abstract: RC415M Attansic l1 RC415ME asus attansic lan schematic Attansic f2 PAD381 PT6319 d1106
Contextual Info: 5 4 3 F5R BLOCK DIAGRAM 2 1 CPU Yonah Single core Yonah Celeron D D Page 2 AGTL+ 133/166MHz LVDS Page 10 DDR2 533/667 RC415ME CRT Single Channel PCIE Page 11 DUAL DDR2 SO-DIMM Page 12,13,14 Page 5,6,7,8,9 PCIE X4 C C MINICARD SB600 Page 28 LAN 10/100 ATTANSIC L2

Attansic L1

Abstract: pr6239 RC415M RC415ME ICS951463AGLFT ASUS attansic f1 RTS5117 C3902 ICS951463
Contextual Info: 5 4 3 F5R BLOCK DIAGRAM 2 1 CPU Yonah Single core Yonah Celeron D D Page 2 AGTL+ 133/166MHz LVDS Page 10 DDR2 533/667 RC415ME CRT Single Channel PCIE Page 11 DUAL DDR2 SO-DIMM Page 12,13,14 Page 5,6,7,8,9 PCIE X4 C C MINICARD SB600 Page 28 LAN 10/100 ATTANSIC L2

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

intel 27123

Abstract: 29043 intel motherboard 915 CIRCUIT diagram M28F008SA
Contextual Info: ß ff llE U B lß O M y in te i M28F008SA 8 MBIT 1 MBIT x 8 FLASH MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64 Kbyte Blocks Very High-Performance Read — 120 ns Maximum Access Time Extended Cycling Capability — 10K Block Erase Cycles

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

CSM 6850

Abstract: mg80960xa 80960XA BV EI 303 3628 80960CA 80960KA 80960KB 80960MC M8259A 77106
Contextual Info: 80960XA EMBEDDED 32-BIT MICROPROCESSOR WITH 33RD TAG BIT TO SUPPORT OBJECT-ORIENTED PROGRAMMING AND DATA SECURITY M ilita ry • Implements JIAWG 32-Bit ISA Standard ■ High-Performance Embedded Architecture — 25 MIPS Burst Execution at 25 MHz — 9.4 MIPS* Sustained Execution at

ctx02-16076

Abstract: CTX02 CTX02 16076 P-Channel Depletion Mosfets T1521 p-channel 250V power mosfet ultrasound HV748 AN-H59 SOT R23 lm2903 external schematic application note
Contextual Info: AN-H59 Application Note High Voltage DC/DC Converter for Supertex Ultrasound Transmitter Demoboards By Afshaneh Brown, Applications Engineer, and Jimes Lei, Applications Manager Introduction The Supertex AN-H59DB1 demoboard is a high voltage DC/DC converter. It can provide up to +90V voltage supply

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

152133

Abstract: LTC1521-3 SDT-223 LTC1521 t-1521 T1521
Contextual Info: u T1521/T1521-3 T1521 -3,3/LTl 521 -5 m TECHNOLOGY 300mA Low Dropout Regulators with M icropower Quiescent Current and Shutdown F€ATUR€S DCSCRIOTIOn • Dropout Voltage: 0.5V ■ Output Current: 300mA ■ Quiescent Current: 12|jA ■ No Protection Diodes Needed

FGT 313

Abstract: N06010 a3058c 271121 intel i860
Contextual Info: [ p fô iy iiM A O W in te L MILITARY i860 XR 32/64-BIT MICROPROCESSOR Parallel Architecture that Supports Up to Three Operations per Clock — One Integer or Control Instruction per Clock — Up to Tw o Floating-Point Results per Clock High Perform ance Design

RC415ME

Abstract: Attansic L1 TPC28T attansic f1 RC415M ICS951463 RTS5117 ATI RC415ME asus Attansic f2
Contextual Info: 5 4 3 F5R BLOCK DIAGRAM 2 1 CPU Yonah Single core Yonah Celeron D D Page 2 AGTL+ 133/166MHz LVDS Page 10 DDR2 533/667 RC415ME CRT Single Channel PCIE Page 11 DUAL DDR2 SO-DIMM Page 12,13,14 Page 5,6,7,8,9 PCIE X4 C C MINICARD SB600 Page 28 LAN 10/100 ATTANSIC L2