T0247 AC Search Results

PHW7N60

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor PINNING - SOT429 T0247 PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance Id F*tol RdS(ON) PIN CONFIGURATION MAX. UNIT 600 7 147 1.2

TRANSISTOR 9642

Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

9544 transistor

Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

T0247

Abstract: 8N60M SW8600 Z357 L4080B l3540 L5545 L5050BN L3580 M/ve09 240
Contextual Info: Power Management Division Please note that our 4th Generation power MOSFETs are currently available in Europe only. T0264 Power Management Division PowerMOS IV plastic power M OSFETs S e m e la b ’s P ow erM O S I V 1M range offers VMOS switching speeds, very low on-resiscance,

LD 33 regulator

Abstract: LM2937-5.0VT0-220 MIC29502 ADJ so-8 2951 MIC29750 T0263
Contextual Info: Section 2. Low-Dropout Regulator Design Charts Regulator Selection Charts Output Current Low Accuracy Noise Single or Dual MIC5210 MSOP-8 Dual 150mA LDO w / Noise Bypass 3.0, 3.3, 3.6, 4.0, 5.0V Single MIC5205 SOT23-5 150mA LDOw/ Noise Bypass 2.8, 3.0, 3.3, 3.6, 3.8, 4.0, 5.0V, Adj

Contextual Info: r Z 7 SGS-THOMSON ^[] æ[l[L[iCT^©[lïl[]©i STPS60xxCP/CPI STPS6045CW POWER SCHOTTKY RECTIFIERS FEATURES AND BENEFITS • ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLESWITCHING LOSSES EXTREME FAST SWITCHING HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE

DHG60C600HB

Abstract: 1.5kv fast recovery diodes DOUBLE FAST DIODE dh40-18a DH20-18A DH60-18A DHF30IM600PN DHF30IM600QB DHG30I600HA T0-247
Contextual Info: N E W P R O D U C T B R I E □ IXYS F SQNIC-FRD . New Soft Recovery Diodes U L T R A F A S T R E C T IF IE R W ITH V E R Y L O W T A IL C U R R E N T March 2006 Overview: IX Y S Corporation - a leader in pow er sem ico ndu cto rs for P ow e r C onversion and M otion

2SJ56

Abstract: 2SJ50 equivalent 2SJ56 equivalent 2SKI76 BUZ90QP BUZ90I BUZ90IP z901 BUZ90S 2SJ568
Contextual Info: Magnatec Engineering Distribution M agnatec - lateral M O S F E T s for the audio m arket M ag n a tec , a co m p an y w ith in th e S e m e la b G ro u p , in tro d u c e s a ran g e o f c o m p le m e n ta ry lateral M O S F E T pow er transistors. Supplied in a range of outlines, the 8/16Amp,

Contextual Info: BYW99P/PI/W HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ ■ ■ SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION T O P 3I: Insulating voltage = 2500 V DC

M7 DIODE POLARITY

Abstract: DIODE M7 marking M7 DIODE MARKING
Contextual Info: SGS-THOMSON IM O M iL iig ra fM O O S B Y W 9 9 P /P I/W HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET FEATURES • . . . . ■ SUITED FORSMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY

Contextual Info: : SG S-THO M SO N BYW99P/PI/W HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET FEATURES • . ■ . . ■ SUITED FORSMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY

T0247AC

Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m

stps3045cw

Contextual Info: SGS-THOMSON STPS30xxCP/CPI STPS3045CW IMSIlaillLiOTIHMDCS POWER SCHOTTKY RECTIFIERS • . ■ ■ . ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE

STPS 50 45

Abstract: STPS 100 3045CP STPS3045CW STPS3045CP
Contextual Info: 30 3045 SGS-THOMSON IMOMiLiigrafMOOS STPS xxCP/CPI STPS CW POWER SCHOTTKY RECTIFIERS • . ■ ■ . ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE

Contextual Info: STPS60L30CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f a v 2x30 A V rrm 30 V Tj (max) 150 °C V f (max) 0.38 V FEATURES AND BENEFITS • ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING

CLP212s

Abstract: ICS Sensors 1220 FT 147 M 78215 T0218 T0247 T092 ft 103 CLP212T 78315
Contextual Info: THE MAX CLIP SYSTEM ™ THE THE PROPRIETARY PROPRIETARY THERMAL THERMAL MANAGEMENT MANAGEMENT SOLUTION SOLUTION FOR FOR ALL ALL POWER POWER COMPONENTS COMPONENTS AAVID THERMALLOY ONE COOL IDEA AFTER ANOTHER THE MAX CLIP SYSTEM™ FOR POWER TRANSISTORS How do you optimize the thermal management of power transistors while saving labor and costs?

T0247 package

Contextual Info: r= Z SCS'THOM SON ^ 7# R IHOTIMDIBS STPS30L40CW POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS lF av 30 A V rrm 40 V V f (max) 0.50 V A1— W— —- K FEATURES AND BENEFITS . • . ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP

IRFZ44G

Abstract: IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor 9721 transistor IRFP140N
Contextual Info: Quarterly Reliability Report for HEXFET Assembly IRGB Number 8 January 1999 Prepared by QA Services Page 1 of 60 Contents Prepared by QA Services 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions/Schematics

Contextual Info: Philips Semiconductors Preliminary specification Rectifier diodes ultrafast, rugged BYQ40EW series FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance

T0247 package

Contextual Info: Philips Semiconductors Preliminary specification Rectifier diodes ultrafast, rugged BYQ60EW series FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance

PWM welding

Contextual Info: @ M ITEL ITZ25F12 - _ Powerline N-Channel IGBT SEM ICON D UCTOR . . . , A dvance Inform ation DS5054-1.2 January 1999 The ITZ25F12 is a very robust non punch through nchannel, enhan cem ent m ode insulated gate bipolar transistor IGBT designed for low power dissipation in a

a 1757 transistor

Abstract: transistors a 1757
Contextual Info: Philips Semiconductors Preliminary specification PowerMOS transistors FHW14N50E Avalanche energy FEATURES • • • • • SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics

T0247 package

Contextual Info: SGS-THOMSON RfflDOœUlLiOir^OiDSi STPS60xxCP/CPl STPS6045CW POWER SCHOTTKY RECTIFIERS FEATURES AND BENEFITS • ■ ■ ■ . VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREME FAST SWITCHING HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE A1

Contextual Info: Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy rated_ FEATURES • • • • • SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics