T0240AA Search Results

diode DSDI 9

Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
Contextual Info: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B

Contextual Info: Part num ber schem e TO-240AA compatible package PS MT 91 N 16 KNX 1 80 6.2 6 7 21 2 3 20 M5 20 2 3 4 5 6 1 Power Semiconductors initials 2) Circuit designation 3) Series number 4) Designates standard recovery time 5) Voltage Multiplier example: 16 x 100 = 1600 Volts)

Contextual Info: St a n da r d Re cove r y Re ct ifie r P WER Semiconductors Inc. Pa r t # PSM D 2 5 N . . se r ie s I F AVE 2 5 A V RRM 1 2 0 0 V ~ 1 8 0 0 V TO-240AA compatible package Short Form Data Sheet 80 6.2 6 7 Part num ber schem e 2 21 3 20 4 5 1 13 20 PS MD 25 N 12 KNX

E78996 rectifier module

Abstract: IRFK2D450 9453B 100-C IRFK2D451 hex-pak
Contextual Info: H E D MflSSMSa INTERNATIONAL □ 0 0 ö cn 4 & I Data Sheet No. PD-9.453B r e c t if ie r T-39-27 INTERNATIONAL. RECTIFIER S \ 1 RECOGNIZED File no E78996 I“R HEXPAK POWER MODULE IRFKSD450 IRFKSD451 Isolated Base Power HEXFET Assembly Half Bridge Configuration

Contextual Info: St a n da r d Re cove r y Re ct ifie r P WER Semiconductors Inc. Pa r t # PSKD 2 5 N . . se r ie s I F AVE 2 5 A V RRM 1 2 0 0 V ~ 1 8 0 0 V TO-240AA compatible package Short Form Data Sheet 80 6.2 6 7 Part num ber schem e 2 21 3 20 4 5 1 13 20 PS KD 25 N 12 KNX

Contextual Info: Bulletin 127136 rev. B 09/97 International Rectifier I S R i THYRISTOR/THYRISTOR r k u / • S tandard JE D E C package ■ S im p lifie d m echa n ical desig n s, rapid a ssem b ly ■ A u xilia ry cathode te rm in a ls o r w irin g conve n ien ce H igh s u rg e ca p a b ility

IRF460 in TO220

Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching irf460 to247 IRF250 TO-247 IRF244 Application of irf250 IRFD9120 N CHANNEL
Contextual Info: HEXFET Power MOSFETs Products From IR FullPak N-Channel FullPak Fully-isolated HEXFETs from the heatsink/enclosure , then the FullPak is for you. Until now, semiconductors were insulated from grounded heatsinks with insulating w ashers and nylon screws. Improper Installation of

Contextual Info: Part num ber schem e TO-240AA compatible package PS KT 110 N 16 STD 1 80 6.2 6 7 21 2 3 20 M5 20 2 3 4 5 6 1 Power Semiconductors initials 2) Circuit designation 3) Series number 4) Designates standard recovery time 5) Voltage Multiplier example: 16 x 100 = 1600 Volts)

Contextual Info: St a n da r d Re cove r y Re ct ifie r P WER Semiconductors Inc. Pa r t # PSM D 9 1 N . . se r ie s I F AVE 9 0 A V RRM 1 2 0 0 V ~ 1 8 0 0 V TO-240AA compatible package Short Form Data Sheet 80 6.2 6 7 Part num ber schem e 2 21 3 20 4 5 1 13 20 PS MD 91 N 12 KNX

Contextual Info: Part num ber schem e TO-240AA compatible package PS MT 25 N 16 STD 1 80 6.2 6 7 21 2 3 20 M5 20 2 3 4 5 6 1 Power Semiconductors initials 2) Circuit designation 3) Series number 4) Designates standard recovery time 5) Voltage Multiplier example: 16 x 100 = 1600 Volts)

v105

Abstract: 16S90 tsr 002
Contextual Info: Bulletin 127136 rev. B 09/97 International Rectifier I S R i THYRISTOR/THYRISTOR r k u / Features Electrically Isolated: DBC base plate • ■ ■ ■ 350 0 V RMS Isolating voltage Standard JED E C package Simplified mechanical designs, rapid assembly Auxiliary cathode terminals or wiring convenience

I8031

Contextual Info: Outline drawings Dimensions in mm and inches 1 mm = 0.0394" TO-252 AA (D PAK) i 'l 1 TO-251 AA r * r L2 1 - E - - - 12 I— 62 ^ i-±- - t “ 1 J ' • o 1 T0-220 AC -o J - ft* - - i F t * B f i •" * i * A r J l r 13 I 9 i r ? U l]!L h T E1 . _[

IRFZ44 equivalent

Abstract: IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf*234 n IRFCG50 IRFC034
Contextual Info: I I n t e r n a t io n a l R e c t if ie r HEXFET Power MOSFETS BVdss Drain Sourct Vofcag* Vote PMt Numbtr Rd s m Ondate IMltMCI (Ohm) H E X -P a k M o d u l« P a ra lle l Chip N-Cham xel 60 IRFK4H054 100 IRFK4H150 200 IRFK4H250 400 IRFK4H350 500 IRFK4H450

Irfp250 irfp460

Abstract: Irfp250 irfp260 irfp9240
Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r HEXFET Power MOSFETS Rd V B« 0SS Drain-to-Source Breakdown Voltage (Volts) Part Number sm On-State Resistance (Ohms) IßCofitinuous Drain Current 25'C IW C RthJC Max Thermal Resistance (Amps) (Ampi) row) PD«To 2PC

mcc4412i01b

Abstract: ixys mcc95 mcc56-12i08b MCC44-12I01B MDD95-16N1 MCC72-12I01 T0240AA MCC95-08I08B IXYS MCC44 IXYS MDD95
Contextual Info: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 TupucTopHbie m .qMOflHbie MOflynM ^ m p m u IXYS Kofl: U r rm I t(r m s ) I t (a v ) M CC44-12I01B M CC56-12I08B M CC72-12I01B M CC95-08I01B M CC95-08I08B MCC162-08I01 M CD26-08I08B M CD56-08I08B

3 phase inverter 120 conduction mode waveform

Abstract: inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter
Contextual Info: Using HEXFET III in PWM Inverters for Motor Drives and UPS Systems HEXFET is a registered trademark of International Rectifier by D. Grant The PWM Inverter Introduction The advantages o f MOSFETs for high frequency pulse-width modulated (PWM) inverters and choppers for variable speed

FL110

Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
Contextual Info: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case

IXTH7P50

Contextual Info: VM M MOSFET Modules VM K N-Channel Enhancement Mode V DSS max. B *D25 Tc = 25°C A DS{on max. Te * 25°C mû ciM Cr8S typ. typ. trr typ. typ. Q0 ^thJS max. nF nF ns nC Package style K/W PD max. T > 2 5 “C W Fig. No. Type TJM = 150°C ► New ► VMM 600-007F *

IRFK20450

Abstract: IRFK20350 IRFK6H450 IRFK3F350
Contextual Info: International HEXFET Power MOSFETs ^ R ectifier HEX-Pak Modules TO-240 N-Charnel Part Number BVq s s Drain Source Voltage Volt RDS(on) On-State Resistance (Ohms) Iq Continuous Drain Current 25°C Case (Amps) IRFK2D054 IRFK2D150 IRFK2D250 IRFK20350 IRFK20450

Contextual Info: Part num ber schem e TO-240AA compatible package PS KT 25 N 16 STD 1 80 6.2 6 7 21 2 3 20 M5 20 2 3 4 5 6 1 Power Semiconductors initials 2) Circuit designation 3) Series number 4) Designates standard recovery time 5) Voltage Multiplier example: 16 x 100 = 1600 Volts)

Contextual Info: Part num ber schem e TO-240AA compatible package PS KT 91 N 16 STD 1 80 6.2 6 7 21 2 3 20 M5 20 2 3 4 5 6 1 Power Semiconductors initials 2) Circuit designation 3) Series number 4) Designates standard recovery time 5) Voltage Multiplier example: 16 x 100 = 1600 Volts)