IRFP244 Search Results

Contextual Info: IRFP244_RC, SiHFP244_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: PD - 95313 IRFP244PbF • Lead-Free Document Number: 91211 6/1/04 www.vishay.com 1 IRFP244PbF Document Number: 91211 www.vishay.com 2 IRFP244PbF Document Number: 91211 www.vishay.com 3 IRFP244PbF Document Number: 91211 www.vishay.com 4 IRFP244PbF Document Number: 91211

IRFP244

Contextual Info: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 12 Qgd (nC) 39 Configuration • Repetitive Avalanche Rated 0.28 • Simple Drive Requirements

Contextual Info: IRFP244 A d van ced Power MOSFET FEATURES B V dss = 250 V ^D S o n = 0 .2 8 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 16 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V

035H

Abstract: IRFPE30 95313
Contextual Info: PD - 95313 IRFP244PbF • Lead-Free Document Number: 91211 6/1/04 www.vishay.com 1 IRFP244PbF Document Number: 91211 www.vishay.com 2 IRFP244PbF Document Number: 91211 www.vishay.com 3 IRFP244PbF Document Number: 91211 www.vishay.com 4 IRFP244PbF Document Number: 91211

Contextual Info: N-CHANNEL POWER MOSFETS IRFP244 FEATURES • L o w e r Rds<on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: International 4655455 0015476 651 • • • • • • PD-9 588B IRFP244 Rectifier HEXFET P o w e r M O S F E T H I NR INTERNATIONAL REC TIFIER Dynam ic dv/dt Rating Repetitive Avalanche Rated Isolated Central M ounting Hole Fast Switching Ease of Paralleling

mosfet irfp 250 N

Abstract: IRFP244B
Contextual Info: IRFP244B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

irf644

Abstract: Irfp244
Contextual Info: IRF644/645 IRFP244/245 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 12 Qgd (nC) 39 Configuration • Repetitive Avalanche Rated 0.28 • Simple Drive Requirements

IRFP244

Abstract: IRFP245 IRFP246 IRFP247 TB334
Contextual Info: IRFP244, IRFP245, IRFP246, IRFP247 Semiconductor 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 15A and 14A, 275V and 250V • High Input Impedance These are N-Channel enhancement mode silicon gate

Contextual Info: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 63 Qgs (nC) 12 Qgd (nC) 39 Configuration Available • Repetitive Avalanche Rated

Contextual Info: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 63 Qgs (nC) 12 Qgd (nC) 39 Configuration Available • Repetitive Avalanche Rated

IRF644

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 5 G0172flfl ?4fl IRF644/645 IRFP244/245 SH6K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

Contextual Info: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 63 Qgs (nC) 12 Qgd (nC) 39 Configuration Available • Repetitive Avalanche Rated

035H

Abstract: IRFPE30 IRFP244PBF
Contextual Info: PD - 95313 IRFP244PbF • Lead-Free 1 IRFP244PbF 2 IRFP244PbF TO-247AC Package Outline Dimensions are shown in millimeters inches TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H"

IRFP244

Abstract: nrf d
Contextual Info: IRFP244 A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .2 8 Î2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 16 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFP244 FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.28Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 16 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V

IRFP244B

Contextual Info: IRFP244B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

Contextual Info: H E 0 I MÖSS4SE INTERNATIONAL ÜGDÖ74S 3 | Data Sheet No. PD-9.588A T-39-13 RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFP244 IRFP245 N-CHANNEL Product Summary 250 Volt, 0.28 Ohm HEXFET TO-247AC TO-3P Plastic Package

IRFP244

Contextual Info: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 63 Qgs (nC) 12 Qgd (nC) 39 Configuration Available • Repetitive Avalanche Rated

irfs250a

Contextual Info: Device List TO-3P IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A SSH25N40A IRFP440A IRFP450A SSH22N50A SSH7N60A SSH10N60A SSH17N60A TO-3PF IRFS140A IRFS150A SSF70N10A IRFS240A IRFS250A SSF45N20A IRFS244A IRFS254A

IRFP244A

Contextual Info: IRFP244A Advanced Power MOSFET FEATURES B V dss = 2 5 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA M ax. @ ■ Lower R ^oa, : 0.214 £2 (Typ.)

Contextual Info: h a r r IRFP244, IRFP245, IRFP246, IRFP247 i s s e m i c o n d u c t o r 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 15A and 14A, 275V and 250V • High Input Impedance These are N-Channel enhancement mode silicon gate