T0240 Search Results

DCF1900-T0240

Contextual Info: DCF Drop-in Isolators & Circulators DCF1900-T0240 2.3 GHz to 2.7 GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Power Forward Power Reverse Package Size 2.3 GHz to 2.7 GHz 20 dB min 0.4 dB (max) 1.25:1 1000 Watts (max)

DCF1900-T0240

Abstract: T0240
Contextual Info: DCF Drop-in Isolators & Circulators DCF1900-T0240 2.3GHz to 2.7GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Power Forward Power Reverse Package Size 2.3GHz to 2.7GHz 20 dB min 0.4 dB (max) 1.25:1 1000 Watts (max)

Contextual Info: Request a Quote | Ask an Engineer Image description. Print this Sheet End of image description. Image description. as PDF EndSave of image description. DCF1900-T0240 2.3 GHz to 2.7 GHz DCF Drop-in ISOLATORS & CIRCULATORS Specifications RF Frequency Isolation

D-68623

Abstract: T0240 westcode igbt
Contextual Info: An IXYS Company Provisional Data Data Sheet Issue:- 3  WESTCODE Date:- 1 Dec, 2005 Absolute Maximum Ratings VOLTAGE RATINGS   Insulated Gate Bi-Polar Transistor Type T0240NA45E MAXIMUM LIMITS UNITS 4500 V Collector – emitter voltage VDC link Permanent DC voltage for 100 FIT failure rate.

Halbleiterbauelemente DDR

Abstract: mikroelektronik Heft 12 VEB mikroelektronik information applikation Mikroelektronik Information Applikation Transistoren DDR information applikation mikroelektronik mikroelektronik Heft sy 710 applikation heft
Contextual Info: m o t ^ o e l e l - c f a n c i r Information Applikation Bauelemente der Leistungs­ elektronik SW77 Bipolare SchaltTransistoren i i l - c m t n r D o lk in î^ e lB l-c ta n a r iik Information Applikation H e f t : BAUELEMENTE DER LEISTUNGSELEKTRONIK

Contextual Info: VMK 90-02T2 Dual Power MOSFET Module VDSS Id25 = 200 V “ 83 A ^ D S o n “ 25 m Q Common-Source connected N-Channel Enhancement Mode Sym bol Test C onditions vv DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS = 6.8 kß 200 V VGS V GSM

MCC44-12IO1B

Abstract: io1B mcc94-22io1b MCC56-08IO8B MCC56-12IO8B MCC95-14IO1B MCC95-12io1B MCC26-14IO1 MCC26 MCC56-16IO1B
Contextual Info: j Thyristor/Thyristor Modules lTAV = 18-116 A Type M CC .io1B v v RRM 1 TAV M CC.io8B p T c ^TRMS *TSM A 45°C 10 ms A V DRM rr "^ VJM ^ th J C Package style thCH per Chip per Chip o z d> V A MCC19-08io1B MCC19-12io1B MCC19-14io1B MCC19-16io1B 800 1200

Contextual Info: s e MIKROn V rsm V rrm Ifrm s Ifa v V Ultrafast Epitaxial Diode Modules maximum value for continuous operation 110 A | (sin. 325 A 1 8 0 ; Tease = 8 5 ° C ; 5 0 4 8 ,5 A Hz) 207 A 100 SKKD 50 E 01 200 SKKD 50 E 02 SKND 50 E 02 SKMD 202 E 02 SKND 202 E 02

ior e78996

Abstract: FK6H350 IR E78996 e78996 india E78996 rectifier module hex-pak IRFK6H350 IRFK6J350 J350
Contextual Info: Bulletin E27112 International B Rectifier IRFK6H350,1RFK6J350 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.

14MQ

Abstract: IRFK4H150 IRFK4J150
Contextual Info: Bulletin E27104 International IxsrIR a tifie r 1RFK4H150,IRFK4J150 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically isolated Base Plate. Easy Assembly into Eauipment

diode DSDI 9

Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
Contextual Info: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B

Contextual Info: Part num ber schem e TO-240AA compatible package PS MT 91 N 16 KNX 1 80 6.2 6 7 21 2 3 20 M5 20 2 3 4 5 6 1 Power Semiconductors initials 2) Circuit designation 3) Series number 4) Designates standard recovery time 5) Voltage Multiplier example: 16 x 100 = 1600 Volts)

Contextual Info: St a n da r d Re cove r y Re ct ifie r P WER Semiconductors Inc. Pa r t # PSM D 2 5 N . . se r ie s I F AVE 2 5 A V RRM 1 2 0 0 V ~ 1 8 0 0 V TO-240AA compatible package Short Form Data Sheet 80 6.2 6 7 Part num ber schem e 2 21 3 20 4 5 1 13 20 PS MD 25 N 12 KNX

Contextual Info: 4bôfe>E2b D O O l b S ? 230 « I X Y n i x Y S MCC26 iTAV= 2 x 27 A MCD26 VRRM= 400-1600 V Thyristor Modules Thyristor/Diode Modules i 1 > > > 500 700 900 1300 1500 1700 Vrrm V.*», V 400 600 800 1200 1400 1600 Type Version 1 B MCC26-06ÌO1 MCC26-08ÌO1 MCC26-12io1

DIODE 22-35 L

Contextual Info: □ IXYS Diode Modules MDD ^RSM ^RRM TYP6 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MDD MDD MDD MDD MDD Test Conditions_ ^FRMS ^FAVM TVJ Tc = 92°C; 180° sine Tc = 100°C; 180° sine ^FSM TVJ = 45°C; VR= 0 T Maximum Ratings 100

e78996 india

Abstract: E78996 rectifier module F350 IRFK3D350 IRFK3F350 E2799
Contextual Info: Bulletin E2799 International IïôrI Rectifier IRFK3D350,IRFK3F350 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • H igh C urrent C apability. UL re cognised E 78996. E lectrically Isolated B ase Plate. E asy A s s e m b ly into E quipm ent.

E78996 rectifier module

Abstract: IRFK2D450 9453B 100-C IRFK2D451 hex-pak
Contextual Info: H E D MflSSMSa INTERNATIONAL □ 0 0 ö cn 4 & I Data Sheet No. PD-9.453B r e c t if ie r T-39-27 INTERNATIONAL. RECTIFIER S \ 1 RECOGNIZED File no E78996 I“R HEXPAK POWER MODULE IRFKSD450 IRFKSD451 Isolated Base Power HEXFET Assembly Half Bridge Configuration

Str W 5754

Abstract: cny 76 IRFK2D054 Str 5754 L1298 DIODE 76A e78996 india IRFK2F054 60788 772200
Contextual Info: Bulletin E2790 International Iîsr I Rectifier IRFK2D054, IRFK2F054 Isolated B ase Power H E X -p a k A s s e m b ly - Half Bridge Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.

diode 0A90

Abstract: B0937 0A90
Contextual Info: Bulletin 127140 rev. B 09/97 International IS R Rectifier ir k .56, STANDARD DIODES .71 s e r ie s NEW ADD-A-pak Power Modules Features 60 A 80 A • Electrically isolated: DBC base plate ■ 3 50 0 V RMS isolating voltage ■ Standard J E D E C package

ma 8630

Abstract: MCC56-14i01 MCC56-14i01 B MCC56-16IO1 MCC56-06IO1 MCD56-04IO8 MCC56-08IO8 B
Contextual Info: 4bE D • 4bflb22fc. 00011fl4 b B I X Y 'T Z S - i y I X Y S CORP n ix Y S Thyristor Modules Thyristor/Diode Modules Vrm VotM V VM V ra V 500 700 900 1300 1500 1700 400 600 800 1200 1400 1600 Type Version 1 Version 8 Version 6 MCC56-06IO1 MCC56-08IO1 MCC56-12I01

diode g1s

Contextual Info: INTERNATIONAL RECTIFIER b5E D • MÛSS4S2 G D l b m 43T ■ INR Bulletin E2790 International [ïq rI R e c tifie r IR F K 2 D 0 5 4 , IR F K 2 F 054 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • High Current Capability.

463345

Contextual Info: INTERNATIONAL RECTIFIER b5E J> MflSSLfiS DOlbaDS 735 INR Bulletin E27110 International S Rectifier IRFK6H150,IRFK6J150 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.

ztuc

Abstract: MDD26 MDD26-04N1 inverter SM 1600 output 48 V E72873 MDD26-06N1 MDD26-08N1 MDD26-12N1 MDD26-14N1 MDD26-16N1
Contextual Info: 4bE D • MböbEEb DDDlElb H HIXY I X Y S CORP E ilX Y S _ MDD26 Diode Modules iTAV= 2 x 36 A VRRM= 400-1600 V V rsm VflRM Type V V Version 1 500 700 900 1300 1500 1700 400 600 BOO 1200 1400 1600 MDD26-04N1 MDD26-06N1 MDD26-08N1

press-pack igbt

Abstract: T0240NB45E T2400GB45E E0800QC25C E0280YH25C snubber IGCT T1200TB25A westcode igbt IGBT 5kV T1500TB25E
Contextual Info: PRODUCT BRIEF d e v o V r Imp nd 4.5k a V s k t 5 e . s 2 chip Press-Pack IGBTs Features and Benefits May 2010 Issue 2 Featuring the improved 2.5kV and 4.5 kV chipsets with typically 25% reduced Vce sat With a track record spanning more than 10 years as a leading