BU326
Abstract: Itron 326A BU326A BU 2578 SOLITRON DEVICES
Contextual Info: 8368602 SOL ITRON DEV ICES_I NC.jTl DE |fl3bfltiDa DD 01415 fi TÌà. Solitron D E V I C E S , INC. BU 326 BU 326A KPU SILICON POWER TRANSISTORS 6 AMPERES FEATURES: HIGH VOLTAGE FAST SWITCHING APPLIC A TIO N S SWITCHING MODE POWER SUPPLIES; CAN BE USED IN HORIZONTAL OUTPUT STAGE
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2SB205
Abstract: GERMANIUM TRANSISTOR 2SC1468 1470 LM 2SC1470 2SB214 transformerless inverter 2SB206 ac-ac inverter 2sd206
Contextual Info: SHINDENGEN C A T . N o . E 326 100W ty p e high v o lta g e silic on p o w e r t r a n s i s t o r d e velope d n e w ly by S H IN D E N G E N has such and V ceo = 3 6 0 V and 4 0 0V and AC 2 0 0V is r e c t if ie d d ir e c tly it can be used in the t r a n s f o r m e r le s s c ir c u it d i r e c t ly . T h e r e f o r e , it is
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2SC1468
2SC1469
T10M36
T10M40
T10M36)
T10M40)
T30M36)
T30M40)
2SB205
GERMANIUM TRANSISTOR
2SC1468
1470 LM
2SC1470
2SB214
transformerless inverter
2SB206
ac-ac inverter
2sd206
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C67078-S3112-A2
Abstract: J 326 t 326 Transistor
Contextual Info: BUZ 326 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 326 400 V 10.5 A 0.5 Ω TO-218 AA C67078-S3112-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218
C67078-S3112-A2
C67078-S3112-A2
J 326
t 326 Transistor
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TL 2272
Abstract: TL 2272 R sft 43 2SA993 138D 2SA1021 2SA982 2SA984 2SA985 2SC2262
Contextual Info: - 5 - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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175MHz
18dBm)
/-175MHz,
26dBm)
175MHz,
-34dBm)
28MHz,
200/unit
TL 2272
TL 2272 R
sft 43
2SA993
138D
2SA1021
2SA982
2SA984
2SA985
2SC2262
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transistor tt 2206
Abstract: TT 2206 transistor transistor BU 102 t 326 Transistor transistor npn 326 BU326 W2206 326 Transistor
Contextual Info: ESC D Ml fl2 3 5 bOS G 0 G M Ô 4 M *] H S 1 E G , NPN Silicon Power Transistor BU 326 A - SIEMENS AKT IENÛ ES ELLS CH AF BU 326 A is a triple diffused silicon NPN power switching transistor in TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength and is
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Q62702-U268
0t304
transistor tt 2206
TT 2206 transistor
transistor BU 102
t 326 Transistor
transistor npn 326
BU326
W2206
326 Transistor
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2SA1090
Abstract: TE 2556 P17W 25p8 2SA1081 2SA1082 2SA1083 2SA1084 2SA1085 2SC2532
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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860MHz,
2SA1090
TE 2556
P17W
25p8
2SA1081
2SA1082
2SA1083
2SA1084
2SA1085
2SC2532
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IR 92 0151
Abstract: transistor BU 109 bu326 t 326 Transistor transistor BU 184
Contextual Info: MO TO RO LA SC XSTRS/R F 12E D | b3b?2S4 QGâMflQâ 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6 AM PERES HIGH VO LTAGE NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS . . . Designed far use in the switch-mode power supplies of colour television receivers.
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AN415A)
IR 92 0151
transistor BU 109
bu326
t 326 Transistor
transistor BU 184
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KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
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TRANSISTOR BDX
Abstract: transistor BDX 62 A transistor BU 184 bdx 330 BU800 transistor BDX 65 transistor BU 109 darlington NPN 1000V 8a transistor ESM855 h21e BU 208
Contextual Info: SUPERSWITCH high power transistor M U 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV
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130CIV
109DP
O-220
104DP
BUX37
CB-159)
BUV54
CB-19
TRANSISTOR BDX
transistor BDX 62 A
transistor BU 184
bdx 330
BU800
transistor BDX 65
transistor BU 109
darlington NPN 1000V 8a transistor
ESM855
h21e BU 208
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55A400
Abstract: BUZ60
Contextual Info: Standard Power MOSFETs File Number BUZ 60 2260 N-Channel Enhancement-Mode Power Field-Effect Transistors 5 .5 A , 4 0 0 V N-CHANNEL ENHANCEMENT MODE fDSioni - 1 .0 f î Features: • SOA is pow er-dissipation lim ite d ■ N anosecond sw itching speeds ■ Linear transfer characteristics
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O-220RRENT
55A400
BUZ60
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MOS 6509
Abstract: 400v 50A DIODE
Contextual Info: UNITRODE CORP 9347963 TS UNITRODE CORP DGlDbbQ 1 920 10660 DT' ^ /i POWER MOSFET TRANSISTORS 400 Volt, 0.55 Ohm N-Channel UFN342 UFN343 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available, This efficient design achieves a very low Rosiom and a high transconductance.
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UFN342
UFN343
UFN341
UFN340
MOS 6509
400v 50A DIODE
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NE24300
Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
Contextual Info: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator
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b4E7414
00D2371
NE243
NE24300
NE243187
NE243188
NE243287
NE243288
transistor 81 110 w 63
transistor 81 110 w 85
NE243499
NE24318
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928 606 402 00
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5008
2SC5008
928 606 402 00
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IRF 850
Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Contextual Info: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400
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s0205
Abstract: UFNZ20
Contextual Info: POWER MOSFET TRANSISTORS ^z2o 50 Volt 0.1 Ohm N-Channel FEATURES DESCRIPTION • • • • • • These low voltage pow er MOSFETS have been designed for optim um performance in low voltage applications. They utilize the m ost advanced technology available. The efficient
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UFNZ20,
UFNZ22
I7101
s0205
UFNZ20
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IC SEM 2105
Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
IC SEM 2105
3771 nec
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TO205AD
Abstract: 2N3866 MOTOROLA TO-205AD MRF525 MRF309 MOTOROLA TO205AD MRF5174 MRF390 2N3866 2N4428
Contextual Info: IF PRODUCTS — BIPOLAR POWER TRANSISTORS continued CASE 79-02 TO-205AD (TO-39) CASE 145A-09 (.300” Stud) CASE 215-02 CASE 244-04 (.280" Stud) CASE 79-03 (TO-205 Type) CASE 305-01 (.204" Stud) CASE 305A-01 (.204” Pill) 3ASÊ 316-01 For UHF Applications
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O-205AD
O-205
05A-01
MRF313,
2N6439
T0-205
MRF525*
2N4428
2N5160f
TO205AD
2N3866 MOTOROLA
TO-205AD
MRF525
MRF309
MOTOROLA TO205AD
MRF5174
MRF390
2N3866
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A 564 transistor
Abstract: 3181 R33 transistor A 564
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
A 564 transistor
3181 R33
transistor A 564
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N mosfet 100v 500A
Contextual Info: DE~1 cl B 4 7 citi3 OOIQSBM 1 UNITRODE. CORP 9347963 U N I T R O D E CORP 920 POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Ghannel 1Û5 2 4 D7"-J^-o7 JTX jtkvI K FEATURES DESCRIPTION • • • • • Th e Unltrode power M O SFET design u tilize s the m ost advanced technology available.
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2N6782
N mosfet 100v 500A
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Motorola MPSU45
Abstract: b0507 MPSU45 MPS-U10 Motorola MPSU95 MPS-U45 MPS-U06 motorola mpsu05 BD529 MPS-U04
Contextual Info: POWER TRANSISTORS — BIPOLAR PLASTIC continued CASE 152 STYLE 1: PIN 1. 2. 3. EMITTER BASE COLLECTOR (COLLECTOR CONNECTED TO TAB) Resistive Sw itching HS t, ^s Max Max ts lcCont Amps Max VcEO (sus) Volts Min 0.5 0.8 1 2 Device Type ^FE M in/M ax @ lc Am p
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MPS-U10
MPS-U60
MPS-U02
MPS-U52
MPS-U03
MPS-U04
BD505
BD506
BD507
MPS-U01
Motorola MPSU45
b0507
MPSU45
Motorola MPSU95
MPS-U45
MPS-U06
motorola mpsu05
BD529
MPS-U04
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FMT1061
Abstract: MD918A se3002 fairchild to-106 FTR129A 2N3571 2N3572 2N5770 FMT1061A FMT2090
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN RF-IF AMPLIFIER AND OSCILLATOR TRANSISTORS BY ASCENDING FREQUENCY (Cont’d) Item PG [GM A] (O S C POW ER) dB @ f Min MHz D EV ICE NO. vCEO V Min *T MHz Min Cob [C ce] (C cb) pF Max (0.8) Pd ta NF dB Max @f MHz 25°C
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FMT2090
O-120
2N5770
PN3563
PN918
SE3002
O-106
FMT1061
FMT1061A
FTR129A
FMT1061
MD918A
se3002
fairchild to-106
FTR129A
2N3571
2N3572
2N5770
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TLN103
Abstract: TPS603 fulse
Contextual Info: TOSHIBA {DI SC RE TE /O PT O} Ti 9097250 TOSHIBA <DISCRETE/OPTO D E I1 C H 7 E 5 D 99D 17328 □□173SÖ DT-MU?! TPS603 SILICON NPN EPITAXIAL PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR . OPTICAL SWITCH . POSITION SENSOR . TAPE, CARD READERS . ENCODERS
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TPS603
TLN103
TLU103
TLHX03
TLN103
TPS603
fulse
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diode sy 710
Abstract: sy 710 diode FN121 ufn120 V01T
Contextual Info: POWER MOSFET TRANSISTORS UFN120 100 Volt, 0.3 Ohm N-Channel 122 U F N 123 UFN FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • N o Second Breakdown • Excellent T em perature Stability D ESCRIPT IO N The Unitrode power M O S F E T design utilizes the m ost advanced technology available.
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UFN120
UFN121
UFN122
UFN123
diode sy 710
sy 710 diode
FN121
ufn120
V01T
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transistor NEC D 587
Abstract: 3181 R33 transistor c 3181
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
2SC4227-T1
transistor NEC D 587
3181 R33
transistor c 3181
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