T 250 N 1200 Search Results

EUPEC TT 105 N 12

Abstract: EUPEC TT 251 N 14 EUPEC powerblock TT251 N 14 erl 35c EUPEC tt 250 n EUPEC powerblock TT251 powerblock tt 251 n EUPEC tt 251 n Eupec TT251 DDG1123
Contextual Info: L IE EUPEC 34032^7 D 0001122 TbT IU PEC T T 250 N, TD 250 N, D T 250 N Elektrische Eigenschaften Electrical properties Höchstzulässige W erte M axim um rated values P e r io d is c h e V o r w ä r ts - u n d R ü c k w ä r ts - S p it z e n s p e r r s p a n n u n g

S50055

Abstract: 11 AK 30 S-2 g2501 s200 251 5
Contextual Info: ATC 0 8 0 5 W L S E R I E S W I R E W O U N D CHIP INDUCTORS Inductor Selection Guide Inductance Tolerance Code nH T T JÄ . yK 2.8''j'2ÍO ( 3.0 <? 250 (MHz) 3.3 <? 250 (MHz) <g>2501 6.8 €* 2501 7.5 <S* 250 « 8.2 <?>250 (MHz) 10<5>250( 12 <5*250 ( 15<3*250(

Contextual Info: 9 ChipInductors-0805HTSeries 2012 A t just .035" high, these are our lowest profile surface m ount inductors. Their w ire w ound ceram ic Part N um ber In d u ctan ce1 nH @ @ @ @ @ 250 250 250 250 250 P ercent T o leran ce2 Q M in3 10 10 10 10 10 55 50 50

ss7553

Contextual Info: ATC 0 6 0 3 W L S E R I E S W I R E W O U N D CHIP I N D U C T O R S Inductor Selection G uide Inductance nH 1.6 « 2 5 0 1.8 « 250 3.3 « 250 3.6 « 250 3.9 « 250 4.3 « 2 5 0 4.7 « 2 5 0 5.1 « 250 5.6 « 250 6.8 « 250 7 . 5 « 250 8.2 « 250 8.7 « 250

Contextual Info: TUSONIX CA^cm RSIC T U S O N IX S T Y L E N U M B E R 868 838 808 M A X IM U M D IA M E T E R 0) 200/5 08 300/7 62 370/940 L E A D S P A C IN G (S) 250/6 35 250/6 35 250/635 250/635 250/6 35 375/952 375/952 375/9 52 375/9 52 375/952 375/9.52 375/952 22 22

Contextual Info: 5EMIKRDN V drm V rsm V rrm Irms1> Volw = 4 l/min., Tw = 40 °C, ED = 50 %, n = 10 V 280 A 580 A 1200 SKIW 250/12 SKIW 500/12 1400 SKIW 250/14 SKIW 500/14 1600 SKIW 250/16 SKIW 500/16 Symbol Conditions SKIW 250 VoU = 4 l/min, T w = 40 °C, ED =100 % 250 A

A190A

Abstract: a190d A500LC GE A390C Rectifier Diode 1N3735 1N4045 A190 A197 A197A A390
Contextual Info: RECTIFIERS 250 TO 740 AM PERES JE D E C GE T Y P E S PEC IFICATIO N S Max. average forward current 1 phase ' f m ( a v operation) (A) @ Tc = (°C) io<u - - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110

"scr manual"

Abstract: A397 Metric Torque Specifications for copper Bolts GE SCR Manual scr manual A397PB General electric SCR manual metric bolts torque m 32 A397A 1N3735
Contextual Info: RECTIFIERS 250 TO 740 AM PERES JE D E C GE T Y P E S PEC IFICATIO N S Max. average forward current 1 phase ' f m ( a v operation) (A) @ Tc = (°C) io<u - - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110

GE SCR Manual

Abstract: "scr manual" scr manual GE A390C Rectifier Diode general electric a390e A390 ge a390t Dow corning 744 1N4053 GE SCR 1000
Contextual Info: RECTIFIERS io<u - 250 TO 740 AMPERES JE D E C GE T Y P E S PEC IFICATIO N S Max. average forward current 1 phase ' f m ( a v operation) (A) @ Tc = (°C) - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110

Contextual Info: 250 mW EPITA XIA L PLANAR DIODES D a ta Sheet Semiconductor Mechanical Dimensions JEDEC DO-35 . t .060.1 n .120 .200 " I . 1.00 tVD. r 1 t Features • INDUSTRY STANDARD DO-35 PACKAGE ■ MEETS UL SPECIFICATION 94V-0 ■ PLANAR PROCESS ■ 250 mW POWER DISSIPATION

IN4106

Contextual Info: K n o x S e m ic o n d u c t o r , In c LOW LEVEL ZENER DIODES LOW CURRENT: 250jiA - LOW NOISE 1N4614 - 1N4121 TYPE NU M BER N O M ZEN ER VOLTAGE Vz @ 250 nA VOLTS M AX ZEN ER IM PED ANCE Z zt @ 250 ^iA (OHM S) M AX REVERSE LEAKAGE CU R REN T Ir @ Vr (|iA dc)

Contextual Info: K n o x S e m ic o n d u c t o r , I n c LOW LEVEL ZENER DIODES LOW CURRENT: 250jiA - LOW NOISE 1N4614 - 1N4121 TYPE NUMBER NOM ZENER VOLTAGE Vz @ 250 \iA VOLTS MAX REVERSE LEAKAGE CURRENT Ir @ Vr (Vdc) (liAdc) MAX ZENER IMPEDANCE Zzt @ 250 nA (OHMS) MAX NOISE

IN3091

Abstract: IN3740 stud type diodes IN3738 IN3085-92 IN3741 IN3742 A177P A177A A197PB
Contextual Info: R I C H A R D S O N / N A T I O N A L EL t.2E D • 7 7 3 4 ^ 1 7 G G 0 0 7 G C] Iñl ■ NAT SILICON DIODES IN 3735-44 IN 4044-56 250 103 250 130 275 120 300 120 3000 5000 4500 5000 5750 46000 37500 100000 84000 100000 138000 1.3 500 1.2 470 1.7 1000 1.3

Contextual Info: K n o x S e m ic o n d u c t o r , I n c LOW LEVEL ZENER DIODES LOW CURRENT: 250jiA - LOW NOISE 1N4614 - 1N4121 TYPE NU M BER N O M ZEN ER VOLTAGE V z @ 250 iA (VOLTS M AX REVERSE LEAKAGE CURRENT Ir @ Vr (nA dc) (Vdc) M AX ZEN ER IM PED ANCE Z zt @ 250 |iA

EL2180C

Abstract: EL2186C EL2280C EL2286C EL2386C EL2386CN EL2386CS EL2480C capacitor 5L7
Contextual Info: EL2386C 250 MHz Triple Current Feedback Amp w/Disable G en era l D e sc r ip tio n T he EL2386C is a trip le current-feedback operational am plifier w hich achieves a —3 dB b andw idth of 250 M H z a t a gain of + 1 w hile consum ing only 3 m A of supply cu rren t per am plifier. I t

Contextual Info: s e m ik r o n SKiiP 292 GD 170 - 375 CTV Absolute Maximum Ratings Symbol |Conditions 1 Values Units 1700 1200 250 - 4 0 . + 150 4000 250 500 2160 23,4 V IGBT & Inverse Diode VcES Vcc 91 lc T j3) V jgo l 4 ' If If m If s m l2t Diode) Operating D C fink voltage

1XYS

Abstract: 1RFZ40 IRFZ41 1XTH5N100 1RLZ34 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510
Contextual Info: - f M € tí: € ft t V ds Vg s or Vd g * V (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N 50 60 60 100 250 500 IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR

GU 2-125

Abstract: Elec-Trol R4561-2 ELECTROL R2677-2
Contextual Info: G E Pow er Electrolytic Capacitors 105 ° C Product 50 to 250 WVDC 250 to 150,000 uF — E X T E M M rT m P E fW W M • t im Broad Capacitance Range • Increased Volumetric Efficiency • Low E S R • Standard Ratings â Genera! Specifications r C A P A C ITA N C E RANGE -

Contextual Info: 3 0E P • 7121237 0 G 2 1 CT H 5 ■ ^ T V 2 > °M 3 / Z T S G S -T H O M S O N s G SGSP363 * J M * M ^(Q i[Li irö«n(gS_ SGSP367 S " T H M S N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP363 SGSP367 V qss 250 V 200 V ^DS(on)

6DM4

Abstract: EI 38-12 000D 30-FRAME rs tube RECTIFIER DIODE 5000A
Contextual Info: 6DM4 TUMO-SOL \ DIODE . 1.188 MAX UN I P O T E N T I A L CAT HOD E FOR DA M P E R S E R V I C E T E L E V IS IO N IN R E C E IV E R S 3 . 250 “ T -9 MAX 3.812 MAX ANY M O U N T IN G P O S I T I O N w 80TT0M BASING 0 ED EC GLASS SHORT ICG BULB INTERMEDIATE

Contextual Info: P O W E R O P E R A T IO N A L A M P L IF IE R S APÉX M IC R O T EC H N 0 L DC PA05 • PA05A V H TTP://W W W .APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • • H IG H IN T E R N A L D IS S IP A T IO N — 250 W ATTS

D1651

Abstract: d1047 c3987 B817 c2078 D1650 d1402 D1649 B1273 d1878
Contextual Info: MOS FET : VDSS, I D C o n t i n u e d on n e x t p a g e T O - 2 2 0 . F I ( L S , t y p e ) 50 60 75 80 D1394* A1258* B507 B1273 B1346 C3144* D313 D1912 D2027 C2078 C4547* 3 3. 5 4 4. 5 B824 D1060 D1395* 5 5. 5 6 8 9 10 12 15 150 200 250 J 282 B884* D1194 *

diode D83

Abstract: D83 - 004 d83 004 diode D83 004 D22 diode marking code r63400 D51X d95-3000 D93G D75-1100
Contextual Info: T W L À M I N A S J EN ISO 9001:2000 v^Z ertifik a t: 75 .1 0 0 .6 7 3 TUV Rheinland InterCert SEMICONDUCTOR POWER DEVICES DIODES , €UROPRODUKT 2004 Marking D61D - 250 - 22 - N O -Œ D -D special requirements and selections code external leads code base code for stud types letter sign

HT 1000 4

Abstract: din 46245 HO125
Contextual Info: HERRMANN T h y ris to re n ty p Type of th y ris to rs Type de th y ris to rs 12 OJ 6 HT 450/09 - OH 6 16 13 18 KG 900 1200 1650 1350 ,1 8 0 0 710 5570 800 550 1500 1000 45E ]> y~ > V/A • M43b27S 1,03 0000105 250 250 i b ■ HRMN l'Z 5 r 2 D 0,05 24 0