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Reel Taping Specification JEDEC

Contextual Info: i V. AXIAL TAPING FOR DO-35 PACKAGE A. PRODUCT NAMING SYSTEM Type of package for shipment is classified by a symbol suffixed to a diode name. [Example] 1N4148 TPA2 © - © i- © B. Indicates the taping specifications Indicates JEDEC registration no.

TIM1414-4LA-371

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation

2SC994

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC994 Unit in mm VHF BANO POWER AMPLIFIER APPLICATIONS. 09.Z9UAX. FEATURES : Output Power '• Po=0.95W Min. ( f=l75MHz, VCC=13.5V, Pi=40mW ) Í¿Q.45 05 .C 8 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING vCBO

GT15Q101

Contextual Info: GT15Q101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm #3 2±0.2 MOTOR CONTROL APPLICATIONS. I5.9MAX . High Input Impedance . High Speed : tf= 0 . 5ys Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode I1AXIMUM RATINGS (Ta=25°C) SYMBOL

thyristor

Abstract: reverse-conducting thyristor Gate Turn-off Thyristor Thyristor triac
Contextual Info: 7. GRAPHICAL SYMBOL Type P Gate Thyristor SCR Bi Directional Triode Thyristor (Triac) Reverse-Conducting Thyristor Gate Turn-off Thyristor Graphical Symbol - ^ T,- 1 - - N-Gate Thyristor (PUT) 84 V T'

2SA1302

Abstract: Toshiba 2Sa1302
Contextual Info: 2SA1302 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm PO W ER AM PLIFIER APPLICATIONS. • • 20.5M AX. Complementary to 2SC3281 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. 03 .3 ± 0.2 3Í- M A X IM U M RATINGS Ta = 25‘,C SYMBOL

1SS239

Contextual Info: SILICON EPITAXIAL SCHO TTKY BARRIER TY P E DIODE C A T V /U H F /V H F MIXER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Reverse Voltage Forward C urrent Junction Tem perature Storage Tem perature Range Vr Ip Tj Tstg RATING 6 30 125

TA8622N

Contextual Info: TOSHIBA TA8622N TENTATIVE T V S O U N D M P X D E M O D U L A T O R F O R U.S.A . S Y S T E M . Internal filters for SUB and SAP . SUB/SAP display . Space Wide . Volume, balance, bass, treble control M A X IM U M R A T IN G S T a = 2 5 ° C ITEM SYMBOL

F585

Contextual Info: February 6, 1997 TIM5964-16L-151 1•RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Pow er at 1dB SYMBOL CONDITION P id B Ta= 25 °C MIN. TYP. MAX. UNIT 41.5 42.5 6.0 7.0 — dBm Com pression Point Pow er G ain at 1dB G id B Com pression Point V d s = 10V

Contextual Info: Apr. 1998 T IM 3 7 4 2 -4 5 S L -3 4 1 1. RF PERFORMANCE SPECIFICATIONS f Ta= 25 °C CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at 1dB 46.0 46.5 PldB — dBm Compression Point VDS= 10V GldB — Power Gain at 1dB 10.0 f=3.3-3.6GHz —

TC40H051P

Contextual Info: TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA TiMnUflRI P/F I U l U n U w l l / l TC40H051 C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC DUAL A N D -O R -IN V E R T GATE TRUTH TA B LE CHARACTERISTIC Supply Voltage Input Voltage SYMBOL RATING UNIT VDD Vss-0.5 ^Vss+10

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2414 SM U nit in mm HIGH CURRENT SW ITCH IN G APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. • Low Saturation Voltage : V q e (s a t)= 0.5V (M ax.) (at Ic= 4A ) M A X IM U M R ATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 AUDIO POWER AMPLIFIER APPLICATIONS. • High DC Current Gain: MAXIMUM RATINGS Unit in mm hpE=100~320 (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage v CBO 30 V Collector-Emitter Voltage VCEO

ic 748

Abstract: 2SC4688
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in ram Weight: ELECTRICAL CHARACTERISTICS CHARACTERISTIC Ta=25°C SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage

2SC2319

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2319 Unit in mm HIGH POWER AMPLIFIER FOR CATV APPLICATIONS. FEATURES : . Hide Band and High Gain for Class A Amplifier. . Excellent Cross Modulation Characteristics. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING

2SH14 toshiba

Abstract: toshiba 2sh13 2SH21 2SH13 2SH13 TOSHIBA 2SH14 2SH20 tn41a
Contextual Info: _ 9097250 TOSHIBA 39C 02370 < D IS C R E T E / O P T O D 'T- 3 5 ~-L.i T R IG G E R D E V IC E FOR T H Y R IS T O R TOSHIBA { D I S C R E T E / O P T 0} P U T 1 TN41A, TN41B 1 3T Ï Ë J t OITSSD 0Q0S37D 7 I ~ Unit in m M AXIM UM RATINGS CHARACTERISTIC SYMBOL

Contextual Info: 2SC4793 SILICON NPN EPITAXIAL TYPE POW ER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • • High Transition Frequency : fr=100M H z Typ. Complementary to 2SA1837 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

2SB863

Abstract: 2SD1148
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB863 o POWER AMPLIFIER APPLICATIONS. Unit in mm 159 M AX. 0O.2ÌO.2 FEATURES: . Complementary to 2SD1148 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL

Contextual Info: UT54ACS253/UT54ACTS253 a d v a n c e i n fo r m a t i o n R ad iatio n -H ard e n e d D u a l 4 -In p u t M u ltiplex e rs FEATURES LOGIC SYMBOL • Permits multiplexing from N lines to 1 line • Performs parallel-to-serial converstion • 1.2 1 radiation-hardened CMOS

Contextual Info: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 37.0 38.0 — dBm

S1377

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE S1377 Unit in ram MEDIUM POWER AMPLIFIER APPLICATIONS. 9.9MAX. 0Z.2±aZ TV HORIZONTAL DRIVER APPLICATIONS. FEATURES: . High Collector to Emitter Breakdown Voltage -• Vcfi0=250V MAXIMUM RATINGS Ta =25°C CHARACTERISTIC SYMBOL

Contextual Info: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S 891C - A U G U S T 1996 - R EVISED O C TO BE R 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section.

s27c64

Abstract: TMS27C64JL
Contextual Info: TM S27C64 65,536-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TM S27PC64 65,536-BIT PROGRAMMABLE READ-ONLY MEMORY NOVEM BER 1 9 6 5 - REVISED APRIL 1 9 8 8 This Data Sheet is Applicable to A ll TMS27C64s and TMS27PC64s Symbolized with Code " A " as Described on Page 12.

WO-61

Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO SSR (ZERO-CROSS TYPE) TOSHIBA {DISCRETE/OPTO} 1>FJ Í D ^ a S D □0DE37b ñ 600V 2A TSS2J44 Unit in na C H A R A C TER ISTIC SYMBOL a O T SS2G 44 T SS2H 44 T S S 2J44 RMS On-state Current P e ii O at C jd e S irfe O r i U t C t n o t IKa-Rcyctitrre}