SXIO Search Results

diode tv18

Contextual Info: fa s t re c o v e ry d io d es stu d s Stud D evices Part and Ordering Number VRRM Urm @ T v *F AV) Tc = 65°C (A) @ T V, l2t @ T V) vT0 @ T V| rT @ T v| (kA) (A’ sxIO3) (V) (mO) ^RRMS) ^FSM p thO-c) p th(J-hs) T V, CC/W) (°C/W) CO (V) (mA) @ T C= 65°C

SXS10-100

Abstract: SXS25 SXS40 SX10 SX15 SX25 SX30 SX40 SX60 SXS15
Contextual Info: sxio 100 HIGH VOLTAGE SILICON RECTIFIERS PO W ER STA C K 400mA - 1.0A High Current, M iniature FEATURES • PIV: From 1kV to 10kV • 400m A to 1.0A • 250nS Reverse Recovery • H igh S urge Ratings • Low Reverse Leakage • C orona Free D ESCR IPTIO N

671-8039

Abstract: sierra modem v.34 SC34323 c code for interpolation and decimation filter delta demodulator 103k lk
Contextual Info: A SC34323 StERRA SEMICONDUCTOR V.34 Analog Front End V.34 AFE with Speakerphone V □ Full echo canceling capability □ 16-bit oversampling A /D and D /A converters - Programmable downsampling frequency from 0 to 10.3K - Sampling frequency can be 3, 4, 6, 8 ,1 2 ,1 6 x symbol rate

ESG456

Abstract: BC109C NPN C17S Transistor BC177 TO18 ir diode oerlikon BC107A BC107B ESG 456 BC109
Contextual Info: / A] VANI OERLIKON/ SEÏIICONJ) 3bE DSblbMfi DDODGDT fi H S E L I D -oi-ol SILICON DIODES - “¿ 7 - 0 \ T f - o i/o<y h) Trigger devices Pd Ta=25«C TYPE - ESG 4 5 6 • ESG 4 5 7 ESG 4 5 8 Von I f (P e a k ) mA mW 200 200 200 SEMICONDUCTOR* If Vt (Trigger Voltage)

SENSYM sx150

Abstract: SENSYM sx01 SX300N SENSYM SX01DN SSAN-16 SENSYM SENSYM SX05 SX15DD4 sensym vacuum SX1000
Contextual Info: SXOl, 05, 15/ 30/ 100/ 150 0 to 1 psî and 0 to 150 psi PRESSURE SENSORS FEATURES GENERAL DESCRIPTION • Low Cost • High Impedance Bridge • Absolute and Differential Gage The SX Series of pressure sensors provide the lowest cost components for measuring pressures up to 150 psi.

SENSYM sx150

Abstract: SENSYM SX100D SenSym SX15D SX100 LM324 rtd with wheatstone bridge- temperature sensor SX15 AT-2150 SX30AN Wheatstone Bridge amplifier
Contextual Info: SENSYM INC b5E D 3 4 ^ 7 3 7 00G23EE 437 SenSym s x i 5, SX30, s x i 00, s x i 50 0 to 15 psi and 0 to 150 psi PRESSURE SENSORS FEATURES GENERAL DESCRIPTION • High Impedance Bridge • Absolute and Differential Gage Devices The SX Series of pressure sensors

5N 3011

Contextual Info: MIL-M—38510/114A 9 November 1979 SUPERSEDING MIL-M-38510/114 25 April 1979 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON This specification is approved for use by all De­ partments and Agencies of the Department of Defense.

D2324

Contextual Info: MOTOROLA wm SEM ICO NDUCTO R TECHNICAL DATA MCM62110 Advanced Information 32K x 9 Bit Synchronous Dual I/O Fast Static RAM with Parity Checker The M CM 62110 is a 294.912 bit synchronous static random access memory organized as 32,768 words of 9 bits, fabricated using Motorola's high-performance silicon-gate

D126D

Contextual Info: [V ìa n IV la c h in e In te r fa c e L O P d r iv e r BU 9768K ►Description • D i m e n s i o n Unit mm B U 9768K o o IiSlf17 ;v^ Q FP -A 64 •F e a tu r e s 1 ) Maximum display up to 126 segments, 32 segments outputs, 3common outputs. 2) 1/3 dutycycle.

SenSym SX15D

Abstract: SSAN-16 SENSYM SX05 adc0804 national semiconductor sensym SX sensym differential pressure SX15AN SENSYM sx150 SENSYM SX01DN Wheatstone Bridge operational amplifier lm324 SX30DN
Contextual Info: SeñSvffi SXOl, 05, 15, 30, 100, 150 O to 1 psi an d 0 to 150 psi PRESSURE SENSORS FEATURES GENERAL DESCRIPTION • Low Cost The SX Series of pressure sensors provide the lowest cost components for measuring pressures up to 150 psi. These sensors were specifically designed

QFP100-P-1420-0

Abstract: SEG80 T6B65A T6B66A
Contextual Info: TOSHIBA T6B65A TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T6B65A COLUMN DRIVER LSI FOR A DOT MATRIX LCD The T6B65A is a column segment driver for a small- or medium-scale dot matrix LCD. It is manufactured using the CMOS process. By using the T6B65A, power

Contextual Info: Advanced Power MOSFET E R F W FEATURES /I8 4 0 A B V dss = 5 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max. @ VOS= 500V

EI011

Abstract: supi SXio
Contextual Info: Audio Education Series Vol. 3 Korean Version ± l ä £ 2 C I2 M A ld is eBook National Semiconductor 1 ^ 3 m g Z l g ( l ä B | 5 L | f ¿ ^ Audio Products Group Hl § Santa Clara, California E f M B f B f ) to !>• CONTENTS Ell ¡ill £2 2>hsf (Stereo Enhancement).Pg. 6

Contextual Info: L S I TECHNOLOGY VLSI I NC 47E ¡VTI » T e c h n o l o g y , in c . T - lS - H S - O H GOVERNMENT PRODUCTS DIVISION PREVIEW VM1553 BUS CONTROLLER REMOTE TERMINAL INTERFACE FEATURES • C om prehensive MIL-STD-1553B dual-redundant Bus C ontroller BC , Bus M onitor (BM), and Remote

Contextual Info: ANALOG DEVICES □ FEATURES Laser Trimmed to High Accuracy: 5.000V ±2.0mV M Grade Trimmed Temperature Coefficient: 2ppm/°C max, 0 to +70°C (M Grade) 10ppm/°C max, -55°C to + 125°C (T Grade) Noise Reduction Capability Low Quiescent Current: 3mA max

671-8039

Contextual Info: SC34325 V.34 Analog Front End V.34 AFE > tr SIERRA SEMICONDUCTOR 4 4 P in PQ FP n Full echo canceling capability □ 16-bit oversampling A /D and D /A converters - Programmable downsampling frequency from 0 to 10.3K - Sampling frequency can be 3, 4, 6, 8 ,1 2 ,1 6 x symbol rate

ESG457

Abstract: C17S BC107A BC107B BC108C BC109 BC109B BC109C C108A 7bc1
Contextual Info: / A] VANI OERLIKON/ SEÏIICONJ) DSblbMfi DDODGDT fi H S E L I 3bE D - o SILICON DIODES T - ESG 4 5 6 • ESG 4 5 7 ESG 4 5 8 Pd Ta=25«C mW If Peak) mA 200 200 200 150 150 150 l - “¿ 7 - 0 \ (h) Trigger devices TYPE i - o Von Vt (Trigger Voltage) mm/max

tc40h393p

Abstract: tc40h393
Contextual Info: k TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA TC40H393P/F TC4QH393 DUAL 4 - B I T BINARY C 2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC COUNTER The TC40H39 3 is a dual binary counter with CLEAR function. When CLEAR input is set to ’’H" level, the contents of each flip-flop are cleared, and all

RG71

Abstract: Digitron B17A B26A B27A SXio
Contextual Info: TENTATIVE DATA SHEET *DIGITRON - Long Life 10 Digit Side-Viewing Cold-Cathode Numerical Register Tube GR10J Limit Ratings Maximum cathode current Minimum voltage necessary to ensure breakdown 4 mA 150 V Characteristics Nominal running voltage A cathode left floating will assume some

5N 3011

Abstract: PSRI
Contextual Info: MIL-M—38510/114A 9 November 1979 SUPERSEDING MIL-M-38510/114 25 April 1979 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON This specification is approved for use by all De­ partments and Agencies of the Department of Defense.