SWITCH NPN SOT Search Results

esr meter circuit diagram

Abstract: AP3015A AP3015 inductor design formula delay line 400ns
Contextual Info: Application Note 1011 Design Consideration with AP3015 Prepared by Yuan Shanshan System Engineering Dept. hysteresis is 8mV , the Feedback Comparator enables the chip and the NPN power switch is turned on. When the NPN switch is on, the inductor current begins to

NPN Transistor 1A 400V SOT-89

Abstract: "NPN Transistor" NTE2431
Contextual Info: NTE2430 Silicon NPN Transistor High Voltage Amp/Switch Compl to NTE2431 Description: The NTE2430 is a silicon NPN transistor in a SOT–89 type surface mount package designed for use in amplifier and switching switching applications. Absolute Maximum Ratings:

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-223 „ ORDERING INFORMATION Ordering Number

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 SOT-23

Contextual Info: UNISONIC TECHNOLOGIES CO., MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING SOT-523

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-223 „ ORDERING INFORMATION Ordering Number

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  3 DESCRIPTION 2 The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-23 JEDEC TO-236 3

MMBT4401L-AL3-R

Abstract: MMBT4401G MMBT4401 MMBT4401-AE3-R MMBT4401L-AE3-R 1S2040
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ 3 DESCRIPTION 2 The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-23 3 2 1 SOT-323 „

pzt2222a

Abstract: QW-R207-001
Contextual Info: UTC PZT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 1 2 3 4 SOT-223 1:EMITTER 2,4:COLLECTOR 3:BASE

MMBT4401

Abstract: MMBT4401 UTC
Contextual Info: UTC MMBT4401 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. 2 1 MARKING 3 2X SOT-23 1:EMITTER 2:BASE 3:COLLECTOR

UTC 225

Contextual Info: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE

Contextual Info: UTC PZT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 3 4 SOT-223 1:EMITTER 2,4:COLLECTOR 3:BASE

MOSFET TRANSISTOR SMD MARKING CODE 11

Abstract: k 1058 mosfet SMD transistor MARKING CODE 312 MOSFET TRANSISTOR SMD MARKING CODE NA tsop6 marking 312 MOSFET TRANSISTOR SMD MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE 7 PMD9050D SC74 marking 345 MARKING CODE SMD IC
Contextual Info: PMD9050D MOSFET driver Rev. 01 — 27 November 2006 Product data sheet 1. Product profile 1.1 General description NPN transistor and high-speed switching diode supplemented by an NPN/PNP transistor pair connected as a silicon-controlled switch in a SOT457 SC-74 small Surface-Mounted

UTC 225

Contextual Info: UTC PN2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

SOT-23 1D

Contextual Info: UTC MMBTA42 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. 2 FEATURES 1 *Collector-Emitter voltage: VCEO=300V *High current gain *Collector Dissipation:

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  3 1 2 FEATURES SOT-23 * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. 3 1 2 SOT-323 3 2 1 SOT-523 

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ 3 1 2 FEATURES SOT-23 * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. 3 1 2 SOT-323 3 2 1 SOT-523 „

free transistor and ic equivalent data

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT2222A Preliminary DUAL TRANSISTOR DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DESCRIPTION „ The UTC MMDT2222A is a Dual NPN small signal surface mount transistor. It’s suitable for low power amplification and switch.

MMBT2222AG-AL3-R

Abstract: MMBT2222A MMBT2222A-AE3-R MMBT2222A-AN3-R MMBT2222AL-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ 3 1 2 FEATURES SOT-23 * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 3 1 2 SOT-323 3 2 1 SOT-523 „

1N916

Abstract: BSR17A
Contextual Info: BSR17A BSR17A C E SOT-23 B Mark: U92 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings*

Contextual Info: UTC MMBTA42 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. 2 1 FEATURES *Collector-Emitter voltage: VCEO=300V *High current gain *Collector Dissipation:

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA42 NPN SILICON TRANSISTOR HIGH VOLTAGE RANSISTOR „ DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. „ FEATURES * Collector-Emitter voltage: VCEO=300V * High current gain

I v48a

Abstract: BUX48A BUV48A BUV48AFI v48a BUX48 transistor bux48
Contextual Info: BUX48/48A BUV48A/V48AFI HIGH POWER NPN SILICON TRANSISTORS • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED 1 3 2 2 APPLICATIONS ■ SWITCH MODE POWER SUPPLIES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PZTA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ DESCRIPTION The UTC PZTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. „ FEATURES * Collector-emitter voltage: VCEO=300V UTC PZTA42