SWICHING 30A CURRENT SOURCE Search Results

swiching 30A current source

Abstract: 48N60C3 ixgh48n60c3 IXGH 48n60c3
Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 48A 2.5V 38ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C

48N60C3

Abstract: IXGH48N60C3 IXGH 48n60c3 swiching 30A current source IXGA48N60C3 IXGP48N60C3 48N60
Contextual Info: GenX3TM 600V IGBT High Speed PT IGBTs for 40-100kHz switching IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 48A 2.5V 38ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

12V 30A diode

Abstract: swiching 30A current source IRGP30B60KD-EP 035H C-150 IRFPE30
Contextual Info: PD - 95120 IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

irf 1830

Abstract: C-150 IRF1010 IRF530S IRGB30B60K IRGS30B60K IRGSL30B60K
Contextual Info: PD - 94799 IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

AN-994

Abstract: C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
Contextual Info: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

Contextual Info: IXGH56N60B3D1 GenX3TM 600V IGBT w/ Diode VCES = = IC110 VCE sat  600V 56A 1.80V Medium-Speed-Low-Vsat PT IGBT 5-40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 600 600 V

Contextual Info: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

irf 1830

Abstract: 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
Contextual Info: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

Contextual Info: TOSHIBA DISCRETE/OPTO 4SE » • ^0^7250 □ GlV'ìTfl 1 ■ T 0 S 4 TOSHIBA FIELD EFFECT TRANSISTOR_ Y T F P 9*59 SILICON N CHANNEL MOS TYPE (ir - YTFPZoZ MOSI) INDUSTRIAL APPLICATIONS Unit In mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: GenX3TM 600V IGBT VCES = IC110 = VCE sat ≤ IXGH56N60B3D1 Medium speed low Vsat PT IGBTs 5-40 kHz switching Symbol Test Conditions TO-247 (IXGH) Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 600 600 V V Continuous

irgb30b60kpbf

Abstract: C-150 IRGS30B60K IRGSL30B60K IRL3103L
Contextual Info: PD - 95356 IRGB30B60KPbF IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.

IXGH56N60B3D1

Abstract: IXGH 56N60B3
Contextual Info: IXGH56N60B3D1 GenX3TM 600V IGBT VCES = IC110 = VCE sat ≤ Medium speed low Vsat PT IGBTs 5-40 kHz switching Symbol Test Conditions TO-247 (IXGH) Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 600 600 V V Continuous

transistor c 2335

Abstract: C-150 IRFI840G IRGIB15B60KD1
Contextual Info: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

transistor BR 9013

Abstract: C-150 IRFI840G IRGIB15B60KD1 transistor c 2335
Contextual Info: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

60-06A

Abstract: 60N60C2D1 60N60C2D IF110 PLUS247
Contextual Info: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM

transistor BR 9013

Abstract: C-150 IRFI840G IRGIB15B60KD1 swiching 30A current source
Contextual Info: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: TOSHIBA DISCRETE/OPTO 45E D ^□^7250 0017^7^ TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - fl • TOSM - YTFP251 MOSI) INDUSTRIAL APPLICATIONS Unit in HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. l&SMAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR

C-150

Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
Contextual Info: PD - 94383C IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
Contextual Info: PD - 94383B IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

swiching 30A current source

Abstract: YTFP253
Contextual Info: i TOSHIBA FIELD EFFECT TRANSISTOR y r r p ^ SILICON N CHANNEL MOS TYPE tt - MOSI YTFP253 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 1 &9UAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 0124Û* DRIVE APPLICATIONS.

200v dc voltage regulator

Abstract: swiching transistor VDs-200V ISS16
Contextual Info: TOSHIBA FIELD EFFECT YTFP9R9 SILICON N CHANNEL MOS TYPE it - MOSI YTFPZ5Z INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 1&9MAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR

IRGS15B60KD

Abstract: IRGSL15B60KD AN-994 C-150 IRGB15B60KD
Contextual Info: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

AN-994

Abstract: C-150 IRGS15B60KD IRGSL15B60KD IRGB15B60KDPBF
Contextual Info: PD - 95194 IRGB15B60KDPbF IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.