SWICHING 30A CURRENT SOURCE Search Results

swiching 30A current source

Abstract: 48N60C3 ixgh48n60c3 IXGH 48n60c3
Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 48A 2.5V 38ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C

irf 1830

Abstract: 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
Contextual Info: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

Contextual Info: TOSHIBA DISCRETE/OPTO 4SE » • ^0^7250 □ GlV'ìTfl 1 ■ T 0 S 4 TOSHIBA FIELD EFFECT TRANSISTOR_ Y T F P 9*59 SILICON N CHANNEL MOS TYPE (ir - YTFPZoZ MOSI) INDUSTRIAL APPLICATIONS Unit In mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

transistor c 2335

Abstract: C-150 IRFI840G IRGIB15B60KD1
Contextual Info: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

60N60C2D1

Contextual Info: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM

transistor BR 9013

Abstract: C-150 IRFI840G IRGIB15B60KD1 swiching 30A current source
Contextual Info: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: TOSHIBA DISCRETE/OPTO 45E D ^□^7250 0017^7^ TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - fl • TOSM - YTFP251 MOSI) INDUSTRIAL APPLICATIONS Unit in HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. l&SMAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR

C-150

Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
Contextual Info: PD - 94383C IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

swiching 30A current source

Abstract: YTFP253
Contextual Info: i TOSHIBA FIELD EFFECT TRANSISTOR y r r p ^ SILICON N CHANNEL MOS TYPE tt - MOSI YTFP253 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 1 &9UAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 0124Û* DRIVE APPLICATIONS.

200v dc voltage regulator

Abstract: swiching transistor VDs-200V ISS16
Contextual Info: TOSHIBA FIELD EFFECT YTFP9R9 SILICON N CHANNEL MOS TYPE it - MOSI YTFPZ5Z INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 1&9MAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR

IRGB15B60K

Abstract: AN-994 C-150 IRGB15B60KD IRGS15B60KD IRGSL15B60KD 94383D
Contextual Info: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

SICK D-79183

Abstract: D-79183 D-79183 waldkirch sick optic typ WL 9 sick WL DOS-1204-G OBS-W24 d 79183 AG D-79183 SICK D-79183 waldkirch
Contextual Info: 23.08.1999 12:42 Uhr Seite 1 The design is also user-friendly, which is proved by the easily accessible terminal chambers, the rotatable plug connection, easy alignment of the sensors thanks to visible red light and the different supply voltages, including two

R20 marking

Abstract: AN-1028 AN-1029 AN-1030 AN-1043 AN-1047 7489 logic diagram Designing Type II Compensation for Current Mode 2sr19
Contextual Info: PD- 97108 iP1203PbF Single Output Full Function Synchronous Buck Power Block Integrated Power Semiconductors, PWM Control & Passives Features • • • • • • • • • • 5.5V to 13.2V Input Voltage 0.8V to 8V Output Voltage 15A Maximum Load Capability

R20 marking

Abstract: AN-1028 AN-1029 AN-1030 AN-1043 AN-1047 AN1030
Contextual Info: PD- 96921C iP1203 Single Output Full Function Synchronous Buck Power Block Integrated Power Semiconductors, PWM Control & Passives Features • • • • • • • • • • 5.5V to 13.2V Input Voltage 0.8V to 8V Output Voltage 15A Maximum Load Capability