SWICH Search Results

Contextual Info: TK13H90A1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type MACHⅡ π-MOSIV TK13H90A1 Swiching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.78 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.)

POWER CR2032

Abstract: swich CR2032
Contextual Info: Untitled Document 页码，1/1 Back Use and Features : Weigh the weight of body FootFoot -tap Switch Automatic Zero Resetting Automatic Swich off OverLoad and Low Battery Indicator 1. Capacity 2. Division 3. Display 4. Precision 5. Operation Temperature

swich

Abstract: Alkaline Alkaline Batteries
Contextual Info: Untitled Document 页码，1/1 Back Use and Features : Weigh the weight of vegetables Automatic Zero Resetting Automatic Swich off OverLoad and Low Battery Indicator 1. Capacity 2. Division 3. Display 4. Precision 5. Operation Temperature 6. Safe Overload

30kG

Abstract: swich weigh
Contextual Info: Untitled Document 页码，1/1 Back Use and Features : Weigh the weight of vegetables Automatic count price Automatic Zero Resetting Automatic Swich off OverLoad and Low Battery Indicator 1. Capacity 2. Division 3. Display 4. Precision 5. Operation Temperature

DKs smd marking

Abstract: marking AF BCX42 high voltage swiching transistors marking AF SOT
Contextual Info: Transistors SMD Type PNP Silicon AF an Swiching Transistors BCX42 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High breakdown voltage 1 Low collector-emitter saturation voltage 0.55 For general AF applications +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1

K25A10K

Abstract: TK25A10K TK25A10K3
Contextual Info: TK25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK25A10K3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 31 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)

Contextual Info: Product specification 1PS76SB62 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Ultra high swiching speed +0.1 2.6-0.1 Very low capacitance High breakdown voltage 0.475 1.0max 0.375 +0.05 0.1-0.02 Guard ring protected Two pin very small plastic SMD package.

FCA50CC50

Abstract: IG2U
Contextual Info: MOSFET MODULE FCA50CC50 UL;E76102 （M） FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（2 devices are serial connected with a fast recovery diode （trr≦100ns）reverse connected across each MOSFET.） The mounting base of the

caldaro joystick

Abstract: sfcp22eg caldaro potentiometer s50jck S50JCK-YO-24R2G-6845 caldaro S50JCK-YQ-24R2G-6845 SE-104 joystick controller S50JCK-YQ
Contextual Info: JOYSTICK CONTROLLERS SPECIFICATIONS 1. Model No. S50 JCK-Y 0-24R2G-6845 2. Mechanism With With With With spring return device knob type 102A swich potentiometer Code-pattern switch center position detection microswitch MECHANICAL PERFORMANCES 3. Outer appearance and dimensions

transistor MJe13007

Abstract: mje13007 equivalent MJE13007 transistormje13007
Contextual Info: NPN SILICON TRANSISTOR MJE13007 ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT ABSOLUTE MAXIMUM RATINGS TA=25oC CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 8 80 Emitter-Base Voltage Collector Current

mtm13127

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . MTM13127 Silicon P-channel MOS FET For DC-DC converter circuits For swiching circuits • Overview  Package MTM13127 is the P-channel MOS FET that is highly suitable ofr DC-DC converter and other switching circuits.

5V SMPS charger circuit diagram

Abstract: 110V ac to 9V dc converter circuit 5V 2A SMPS circuit diagram charger 230 AC to 9V dc smps 230 AC to 5V dc smps smps 110v 1.6a 5v dc 500ma variable transformer 9V 1A smps PJM110 switching power transformator
Contextual Info: PJM110 High Voltage Power Switching Regulator T he M110CD/M110CZ high voltage power swiching output power up to 20W M110CZ with a variable AC input regulators use a breakthrough design to provide a low that ranges from 85V to 265V. cost, high efficiency off-line switcher solution for chargers,

FBA75CA45

Abstract: FBA75CA50
Contextual Info: MOSFET MODULE FBA75CA45/50 UL;E76102 （M） FBA75CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（ 2 devices are serial connected.） The mounting base of the module is electrically isolated from semiconductor elements for

sod-323t

Contextual Info: SCS355T SurfaceMount Swiching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 0805 Features 0.086 2.2 0.071(1.8) Designed for mounting on smal l surface High speed 0.057(1.45) 0.041(1.05) High mounting capability,strong surge withstand,

unizon corporation

Abstract: Unizon F45k D3SM
Contextual Info: l û Wüdd 11 3 11 I 3 j 3 d — r * « I t l|f O A 9 S / o S ~ 3 & -0 & Ì User ! M essrs. •J Jype. Q A 9 S High reversa Nc X X - H H - S 0 7 6 - ¿ > voltage type AM Detector, Swichmg, e t c / -C athode 3 * M ark(i) : _ C o l° r . • . F* JEDEC

2SA571

Abstract: 2SC97A swiching TC5A high frequency amplifier TO-205MD
Contextual Info: r 2SC97A 2SC97A ij ^ NPN V h 7 > v > T . ? / N P N SILICON EPITAXIAL TRANSISTOR High Speed Switching, High Frequency Amplifier H f l H f f l/ln d u s t r i a l Use £ ^/FEATURES •800mA < tV 'iT 'C O iS JS X 'i f- v Large current high speed swiching. •

w241

Contextual Info: Ordering number : ENN6939 N-Channel Silicon MOSFET FW241 'SAMYO, Ultrahigh-Speed Swiching Applications Features Package Dimensions • T his c o m p o s ite device allow s high density m o u n tin g by unit : m m in corpo rating tw o M O S F E T chips in one p ackag e that

503 Variable Resistor

Abstract: 100N RKJXS1004001
Contextual Info: Multi Control Device 8-directional Stick Switch with Center-push Function RKJXS Series 8-direction center push type switch in 2.3mm low-profile design. Typical Specifications Items Specifications Swich ON position 7˚ max. Operating force 0.8±0.5N Push operating force

Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO

Microswitch Hall

Abstract: swich LT253A
Contextual Info: Hall IC LT253A GaAs Hall IC for Noncontact Swich Unidirectional magnetic field-type • Features ■ Outline Dimensions 2.7±0.3 ¡Operation by small magnet due to high sensitivity Operating point<30mT Y ¡Combining a GaAs Hall device and an IC in a compact

B1030

Abstract: high voltage swiching transistors swiching full KSC2752
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic Unit Collector- Base Voltage Collector-Em itter Voltage V cbO 500 V V cE O 400 V Emitter- Base Voltage VEbo 7 V

PJ13007 equivalent

Abstract: PJ13007 swiching transistor PJ13007CZ swiching pj13007
Contextual Info: PJ13007 NPN Epitaxial Silicon Transistor HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Swiching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS Ta= 25 ℃ Characteristic Symbol Rating Uint Collector Base Voltage

Contextual Info: TK150F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK150F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 210 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 40 V)

Contextual Info: TK100F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications • Low leakage current: IDSS = 10 A (max) (VDS = 40 V) • Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)