MTM13127 Search Results

mtm13127

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . MTM13127 Silicon P-channel MOS FET For DC-DC converter circuits For swiching circuits • Overview  Package MTM13127 is the P-channel MOS FET that is highly suitable ofr DC-DC converter and other switching circuits.

MTM131270BBF

Contextual Info: Doc No. TT4-EA-13636 Revision. 2 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOSFET Unit: mm For Switching 2.9 0.4 0.16 3  Low Drain-source On-state Resistance : RDS on typ = 92 m  (VGS = -4 V)  Low Drive Voltage : 1.8 V Drive

mtm861270

Abstract: MTM86127 mtm13127
Contextual Info: Doc No. TT4-EA-10304 Revision. 2 Product Standards MOS FET MTM861270LBF MTM861270LBF Silicon P-channel MOSFET Unit : mm For Switching 1.6 0.2 MTM13127 in WSSMini6 type package 0.13 6 5 4 1 2 3 • Features  Marking Symbol : MK 1.4 1.6  Low Drain-source On-state Resistance : RDS on typ = 80 m  (VGS = -4 V)

Contextual Info: Doc No. TT4-EA-13636 Revision. 3 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOS FET Unit : mm For switching 2.9 0.4 • Features 0.16  Low Drain-source On-state Resistance : RDS on typ = 92 m  (VGS = -4.0 V)  Low drive voltage: 1.8 V drive

Contextual Info: Doc No. TT4-EA-13636 Revision. 4 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOS FET Unit : mm For switching 2.9 0.4 • Features 0.16  Low Drain-source On-state Resistance : RDS on typ = 92 m  (VGS = -4.0 V)  Low drive voltage: 1.8 V drive

MN864779

Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
Contextual Info: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.