SVC201SP Search Results

Contextual Info: Ordering number : ENN501I SVC201SPA Diffused Junction Type Silicon Diode SVC201SPA Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions unit : mm 1184 [SVC201SPA] 2.2 3.0 4.0 1.8 0.4 0.5 15.0 The SVC201SPA, 201Y are varactor diodes of

FUH -29A001B

Abstract: FUH -29A001F GVC2013PA SVC201SPA
Contextual Info: PutiHpig FKinHnr B j g H j l SVC201SPA, 201 y D u llu ie d J u n c tio n s Tvpw 5 il llç u ii f r o d o Varactor Diode {IOC AP for FM Receiver Electronic Tuning / / Features Package Dimensions Itic 5 V C 2 0 IÍP A . 2 0 ! Y aal vlii «hiciücs a ttu tii j m ieli <m s ir ^ im e ftb ric fljò f) * i ' l i hm mìplim

ENN501I

Abstract: SVC201SPA
Contextual Info: Ordering number : ENN501I SVC201SPA Diffused Junction Type Silicon Diode SVC201SPA Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions unit : mm 1184 [SVC201SPA] 2.2 3.0 4.0 1.8 0.4 0.5 15.0 The SVC201SPA, 201Y are varactor diodes of

kt 501

Abstract: SVC201SPA SVC201Y "FM receiver"
Contextual Info: Ordering number :EN501H SVC201SPA, 201Y Duffused Junctions Type Sillicon Diode Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions • The SVC201SPA, 201Y are varactor diodes of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in FM

SVC303

Abstract: BQ 6100 SVC251 ND3048 ND3049-3D ND3049-5E ND3050-3D ND3050-5E SVC201SPA SVC201Y
Contextual Info: - & s ND3048-5E ND3049— 3D ND3049-5E ND3050-3D ND30S0-5E N D31 3 6 1 -3D ND3138(1)-5B ND3138(2)-3D ND3138(2)-5E SVC201SPA # « mm sn Bis nn an hn Bn * * £ ft Vr m Vr (m W) (V) (V) P mm £1* « Ÿ B B M Ct. Cj* (pF) nin typ max typ max VI (V) V2 (V) 50

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

1271a

Abstract: P 1271A ND3048 ND3049-3D ND3049-5E ND3050-3D ND3050-5E SVC201SPA SVC201Y SVC202
Contextual Info: - & s ND3048-5E ND3049— 3D ND3049-5E ND3050-3D ND30S0-5E N D31 3 6 1 -3D # « mm * * £ ft Vr m Vr (m W) (V) (V) P Tan 200 25 0. 7 Bis 200 25 4.0 Tun 200 25 Tun 200 Tun max V r (V) min typ max VI (V) V2 (V) 50 6 50 0. 23 6 6 50 0. 6 6 50 0. 6 6 6 50 0.

BQ 6100

Abstract: svc203cp SVC303 ND3048 ND3049-3D ND3049-5E ND3050-3D ND3050-5E SVC201SPA SVC201Y
Contextual Info: - & s # « mm sn * *£ P m W «ŸBBM ft Vr m Vr (V) (V) mm £1* Ct. C j * (pF) nin typ max gs.tk Q min V r (V) mi n typ max VI (V) V2 (V) <Q) & Umax $ V r (V) f (MHz) - n f d max Ct(Vl)/Ct(V2) 199 (UA) V r (V) ND3048-5E Tan 200 25 0. 7 1.1 1. 5 8 25 50 0. 1

2SK2335

Contextual Info: I n t r o d u c t i o n of H i g h - F r e q u e n c y D e v i c e s AM. RM Tuner* C ase O u t l i n e s u n it:m m F o r TRs SANYO:MCP , 1 '-Base, 2:Emi t t e r , 3 : C o l l e c t o r ; R * n~ ANT 1C AM o s e FM u s e ♦ R F Amp L A I 1 37 L AI 1 9 3

RF1119

Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
Contextual Info: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written

Audio Power Amplifier MOSFET TOSHIBA

Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Contextual Info: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

455 khz if amplifier

Abstract: toko OSCILLATOR 12.8mhZ CFWS455F ILV00150 ILV00151 LV2210V SSOP24 mitsumi RF 611sns
Contextual Info: Ordering number : ENN7028 Bi-CMOS IC LV2210V Basic Data Communication Receiver IC Overview Package Dimensions The LV2210V is a basic data communication receiver IC that integrates on a single chip a frequency synthesizer that can be controlled by serial data, a downconverter

BQ 6100

Abstract: svc203cp ND3048 ND3049-3D ND3049-5E ND3050-3D ND3050-5E SVC201SPA SVC201Y SVC202
Contextual Info: - * & s # « m m P m W ND3048-5E s n N D 3 0 4 9 —3 D * £ ft Vr m Vr (V) (V) gs.tk « Ÿ B B M nin typ max V r (V) - fdmax Ct(Vl)/Ct(V2) n m m £1* Ct. C j * (pF) 199 Umax Qmin & min typ max V I (V) V 2 (V) <Q) V r (V) f(MHz) (UA) V r (V) Tan 200 25

svc203cp

Abstract: BQ 6100 SVC251 ND3048 ND3049-3D ND3049-5E ND3050-3D ND3050-5E SVC201SPA SVC201Y
Contextual Info: - * * £ & s # « mm P m W ND3048-5E sn N D 3 0 4 9 — 3D ND3049-5E ND3050-3D ND30S0-5E N D 3 1 3 6 (1)-3D Bis nn an hn Bn ft Vr m Vr (V) (V) «Ÿ B B M gs.tk nin typ max f d max Ct(Vl)/Ct(V2) mm £1* Ct. C j * (pF) V r (V) mi n typ max <Q) VI (V) V2 (V)

BA 7891 NG

Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Contextual Info: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进

CV Series sanyo

Abstract: 92256 max3819 SVC352 PACKAGE sanyo SVC363 svc2115
Contextual Info: a u m > VARIABL E- CA PA CI TA NC E DIODES IQCAP Case Outlines(unit:mm) 1 :Anode/Cathode SANYO:MCP 2:Anode 3:Cathode Low-voltage and high-voltage variable capacitance diodes are available for both of AMM electronic tuning use ana FM electronic tuning use.

nec d882

Abstract: D882 NEC nec d882 p j112 fet 2SK163 2SK508 D7540185 ON4831-2 MC7722 3SK290
Contextual Info: Se m i c o n d u c t o r s RF 手册 第 6版 RF 产品的应用和设计手册 2005年5月 发布日期： 2005 年5月 文件顺序号：9397 750 15125 Semiconductors Henk Roelofs, 副总裁&总经理 RF产品 序言 RF手册涉及了材料和许多关于RF系统方面的广泛领域。产品范围包括：RF小信号分

2SK2073

Abstract: 3SK251 spa semiconductor lf SVC355 tuner 92 2SK715
Contextual Info: I n t r o d u c t i o n of H i g h - F r e q u e n c y Devices 1 . AM, F'M T u n e r ANT V LAI 137 LAI 193 ♦ B F Amp ★ T u n i nR Diode use SV C 321SPA SVC352 SYC323 SVC353 SVC333 SVC 3 5 4 SVC341 SVC355 SVC3Í2 SVC363 SVC364 SVC343 SVC34 4 S VC 34 5 S VC 3 4 6

d1684

Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
Contextual Info: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249

Contextual Info: DIODES, THYRISTORS High-speed Switching Diodes Plastic-package Diodes k A ) VR (V) Package type 0.10 80 CP5 Common anode (4 elements) FC 8 0 8 0.10 80 CP5 Common cathode (4 elements) FC 8 04 0.20 30 CP5 2-element parallel Common anode F C 8 05 0.50 30 CP5

2SK163

Abstract: BB142 BF245c SMD BF245A spice ON4831-2 BB184LX BF1109 spice bf998 2SK508 BFG480W
Contextual Info: RF!๮֩!‫ڼ‬7Ӳ RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2005౎11ሆ ݀քන೺;!!2005౎11ሆ! ࿔ॲຩႾࡽǖ!9397 750 15371 Henk Roelofs-!ޭጺ֋!&!ጺঢ়૙!RFׂ೗ Ⴞჾ ࣌ᆓ۩ለ‫ڼ‬7ӲRF๮֩ă࿢்ඓ႑Ljएᇀᆌᆩ႑တ‫ڦ‬ඇ঍ࢻ๕֡ፕႎঋ‫ࣷॽۅ‬๑౞इᅮ‫ݩ‬റLj࿢்‫ڦ‬