SUP85N03 Search Results

AN609

Abstract: SUP85N03-04P
Contextual Info: SUP85N03-04P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

sup85n03

Contextual Info: SUP85N03-3m6P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0036 at VGS = 10 V 85d 0.0044 at VGS = 4.5 V 85d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: SPICE Device Model SUP85N03-3m6P www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

AN609

Contextual Info: SUP85N03-3m6P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: SPICE Device Model SUP85N03-3m6P Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SUP85N03-3m6P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0036 at VGS = 10 V 85d 0.0044 at VGS = 4.5 V 85d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

60 SMD 5050 Ultra Bright LEDs

Abstract: MMA 0204 HV - Professional
Contextual Info: Vishay Intertechnology, Inc. One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components To view datasheets of the products contained in the Engineer’s Toolbox, please visit www.vishay.com/ref/et1 Alternative

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

SUB85N03-04P

Abstract: SUP85N03-04P S-40101 S40101
Contextual Info: SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 85a 0.007 @ VGS = 4.5 V 85a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D TO-263 (D2PAK) 100% Rg Tested

SUB85N03-04P

Abstract: SUP85N03-04P S4010 s40101
Contextual Info: SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 85a 0.007 @ VGS = 4.5 V 85a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D TO-263 (D2PAK) 100% Rg Tested

Contextual Info: SUP/SUB85N03-07P New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.007 @ VGS = 10 V 85 a 0.01 @ VGS = 4.5 V 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N03-07P

SI2333DS-T1-E3

Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
Contextual Info: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

Contextual Info: SUP/SUB85N03-07P New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.007 @ VGS = 10 V 85 a 0.01 @ VGS = 4.5 V 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N03-07P

s40101

Abstract: SUB85N03-04P SUP85N03-04P
Contextual Info: SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 85a 0.007 @ VGS = 4.5 V 85a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D TO-263 (D2PAK) 100% Rg Tested

Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating

sum45n25

Abstract: PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08
Contextual Info: For Automotive Applications w w w. v i s h a y. c o m SELECTOR GuIdE Power MoSFeTs P O w E R M O S F E Ts V I S H AY I N T E R T E C H N O L O G Y, I N C . SeMICoNDUCTorS reCTIFIerS Schottky single, dual Standard, Fast, and ultra-Fast Recovery (single, dual)

q406 transistor

Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

SUB85N03-07P

Abstract: SUP85N03-07P c4038
Contextual Info: SUP/SUB85N03-07P New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.007 @ VGS = 10 V 85 a 0.01 @ VGS = 4.5 V 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N03-07P

Contextual Info: SUP/SUB85N03-04P New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 85 a 0.007 @ VGS = 4.5 V 85a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N03-04P

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

SUB85N03-04P

Abstract: SUP85N03-04P AA85A
Contextual Info: SUP/SUB85N03-04P New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 85a 0.007 @ VGS = 4.5 V 85a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N03-04P

Contextual Info: SUP/SUB85N03-07P New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.007 @ VGS = 10 V 85 a 0.01 @ VGS = 4.5 V 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N03-07P