SU 2369 Search Results

C6200

Abstract: C6201 TMS320 TMS320C6201 VME64 XDS510 TMS320C6X FEATURES HA13EX features architecture applications TMS320C6x architecture TMS320C6x
Contextual Info: Details ON SIGNAL PROCESSING ’C SPE 6x C IS IAL SU E INSIDE ’C6x Development Tools Emphasize Software 3 VelociTI Architecture Key for Parallel Performance 5 New Third-Party Hardware and Software 6 MARCH 1997 ISSUE 47 ’C6201 unleashes highest level of DSP

IRF5402

Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
Contextual Info: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M

2m3904

Abstract: LINEAR TECHNOLOGY PAX LT1016 TRANSISTOR 50GHZ 2N2369 transistor pulse generator LTC883 voltage controlled pulse width generator 2M390 HP 5082-4204 LT1016I
Contextual Info: um TECHNOLOGY LT1016 ultra Fast Precision C o m p a ra to r F€ O TU R € S D € S C R IP T IO fl • ■ ■ ■ ■ ■ ■ The LT1016 Is an u ltra fast 1 0 n s com parator s p e c ifi­ cally designed to interface d ire c tly to TTL logic w h ile operating off e ithe r a dual ± 5 V su p p ly or a single + 5 V

Contextual Info: EL2166C F e a tu r e s G e n e ra l D e sc r ip tio n • 110 M H z 3 d B b a n d w id th A y = + 2 • 115 M H z 3 d B b a n d w id th (A y = + 1 ) • 0.01% d iffe re n tia l g ain , R l = 500ft • 0.01° d iffe re n tia l p h ase, R l = 500H • L ow su p p ly c u rre n t, 7.5 m A

jrm a55

Abstract: tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45
Contextual Info: PR E FA C E T he IBM P erson al C o m p u te r T ech n ical R eferen ce M anual is designed to pro v id e h ard w are design an d in terfa ce in fo rm atio n . T h is p u b licatio n also provides B asic In p u t O u tp u t S y stem B IO S in fo rm atio n as w ell as p ro g ram m ing su p p o rt m a tter.

SSY20

Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
Contextual Info: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3

MP21E

Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
Contextual Info: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR

LS506

Contextual Info: TIBPLS506C 13 x 97 x 8 FIELD-PROGRAMMABLE LOGIC SEQUENCER D 3 0 9 0 . D E C E M B E R 1 9 8 7 - R E V IS E D N O V E M B E R 1 9 8 9 J T OR N T PAC KAG E • 50 -M H z Max Clock Rate

ic TL074

Abstract: ci tl072 TL071 IC IC TL071 TL07AC LM324b ci tl071 TL07 TL072 motorola
Contextual Info: TL071 TL072 TL074 MOTOROLA SEMICONDUCTOR TECHNICAL DATA LOW NOISE, JFET INPUT OPERATIONAL AMPLIFIERS SILICON MONOLITHIC INTEGRATED CIRCUITS LOW NOISE, JFET INPUT OPERATIONAL AMPLIFIERS These lo w noise JFET in p u t opera tio na l a m p lifie rs co m bin e

transistor C624

Abstract: T120TA 2N2457 B3 ho transistor C621 RT1111 2N1468 CK277 KVT 50/102n 3500 2SC502
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

TIP 110 transistor

Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
Contextual Info: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature

TL060B

Abstract: TL060CP RS2368 TL071 IC equivalent ic TL064 IC equivalent ic
Contextual Info: TL060, TL060A, TL060B, TL061, TL061A, TL061B TL062, TL062A, TL062B, TL064, TL064A, TL064B LOW POWER JFET-INPUT OPERATIONAL AMPLIFIERS D 23 92, N O V E M B E R 1 9 7 8 - R E V IS E D N O V E M B E R 198 8 20 DEVICES COVER MILITARY, INDUSTRIAL, AND COMMERCIAL TEMPERATURE RANGES

MD2369

Abstract: MD2369AB MD2369B transistor k84 MD2369A MD2369AF MD2369BF MD2369F MQ2369
Contextual Info: M D 2 3 6 9 , A , B s il ic o n M D 2 3 6 9 F , A F , BF M Q 2369 M ULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON M ULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose switches and am plifiers, fro n t end detectors, and temperature com­

Core International

Contextual Info: interrii H IP 1011 A u g u s t 1999 D a ta S h e e t • Controls Distribution of Four Supplies: +5V, +3.3V, +12V, and-12V • Internal MOSFET Switches for +12V and -12V Outputs • Microprocessor Interface for On/Off Control and Fault Reporting • Adjustable Overcurrent Protection lor All Supplies

BC-337 B 011

Abstract: BC 195 TRANSISTORS transistors BC 23 SO2221R BC-338 B 011 SO2484R BC 930 222-1 2221 bc 107 silicon equivalent
Contextual Info: A C T IV E COMPONENTS FOR H Y B R ID CIRCU ITS COMPOSANTS A CTIFS POUR CIRCUITS HYBRIDES ê CB-166 SOT-23 Silicon NPN transistors, switching and general purpose Marl ing Mart,tuage Type Type N R . Pin conf. Brochage Transistors NPN silicium, usage générai et commutation

54LS374

Abstract: 54LS374DMQB H122 DM54LS373W DM74LS373N DM74LS373WM J20A LS373
Contextual Info: NATIONAL SEMICOND -CLOGIO bSGliaa GGTQGTS 0 B1E D -4ferO '7H | National Semiconductor </ CO a C » CO M DM54LS373/DM74LS373, 54LS374/DM54LS374/DM74LS374 TRI-STATE Octal D-Type Transparent Latches and Edge-Triggered Flip-Flops General Description Features

FCX2369

Abstract: FCX2369A
Contextual Info: FCX2369A FCX2369 SOT89 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR FEATU RES T h e se d evice s are suitable for use in h ig h speed, lo w current sw itc h in g applications. P A R T M A R K IN G D E T A IL S - N4 FCX2369A - FCX2369 N5 ABSOLUTE M A X IM U M RATINGS

2n2369

Abstract: 2N2369A 2N2369 transistor transistor 2n2369
Contextual Info: 2N2369 2N2369A* *also available as JAN, JANTX, JANTXV SILICON SMALL-SIGNAL NPN TRANSISTORS • HIGH CURRENT GAIN • FAST SWITCHING • HIGH FREQUENCY M A X IM U M R A T IN G S R A T IN G S Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

E13288

Contextual Info: THI S DRAWING I S UNPUBLISHED. CO PYRIGHT RELEASED FOR PUBLICATION 19 BY AMP INCORPORATED. AL L R I G H T S , 19 LOC REVISIONS DI ST G RESERVED. 14 LTR D ESCRIPTION REV M D PE R DATE 0G3A-0529-01 285EP0 APVD JR MJS D 15.88 R [ .625] MAX W A 8 H 5 R A iv n n p

SG 2368

Abstract: UFND220
Contextual Info: UNITRODE CORP 9347963 TE U N IT R O D E CORP DE 1 ^ 3 4 7 ^ 3 DDlOfllS 1 | ~ 92D ’ iS'^15' 10815 P O W E R M O S F E T T R A N S IS T O R S 200 Volt, 0 .8 Ohm N-Channel UFND220 FEA TU R ES D ESC R IPTIO N • • • • • • • The Unitrode power M OSFET design utilizes the most advanced technology available. This

Contextual Info: R wduit Electrical Group R eel Sm t“In sta lla tio n r a R e q u ire m e n t C h a rt — C D -8 00 D ie Insert S e r ie s CA-800 Applicator Die Inserts The following chart is for general reference. All tooling information, including crimp shut height dimension, is included on the product reel label.

IC ATA 2388

Abstract: ATA 2388 we32100 YXXXX
Contextual Info: WE 32106 M ath A cceleratio n Unit Description The W E 32 10 6 M a th A c c e le ra tio n U n it MAU pro vid e s flo a tin g -p o in t c a p a b ility fo r th e WE 32100 M ic ro p ro c e s s o r a n d is fu lly co m p a tib le w ith th e IEEE S ta n d a rd fo r B in ary F lo a tin g ­

tc 8066

Abstract: 2sk2370 K2369
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK2370 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2369/2SK2370 is N -C hannel MOS Field E ffect T ra n sis- PACKAGE D IM E N S IO N S in m illim e te rs to r d e sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s .

Contextual Info: Numeric Index Family Specification and General Information Device Data Sheets Package Data This databook contains device specifications for Motorola's ECLinPS advanced ECL logic family. ECLinPS ECL in picoseconds was developed in response to the need for an even higher performance