STS BV 1500 Search Results

STS Bv 1500

Contextual Info: BV 8, BV 12, BV 16 High Voltage Si-Rectifier Si-Hochspannungs-Gleichrichter Nominal current Nennstrom 350 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 7000. 15000 V Plastic case Kunststoffgehäuse 0 6.3 x 21 [mm] Weight approx. Gewicht ca.

1N1742A

Abstract: 1N1742 MIL-S-19500 1N742A 1N742 MIL marking diode military part marking symbols origin semiconductor diode
Contextual Info: NIL SPECS i c | □□□Q125 00D3fl47 5 | M I L - S - 1 9 5 0 0 / 2 9 8 U SA F I NOTICE I IOF VALIDATION l NOTICE 1 17 AUGUST 1987 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N742A MIL-S-19500/298(USAF) and Amendment 3, dated 24 July 1968, have been reviewed &

Contextual Info: BV 4, BV 6 Si-Hochspannungs-Gleichrichter High Voltage Si-Rectifier 50 mA Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 3 000. 5 000 V Plastic case Kunststoffgehäuse D O -15 Weight approx. Gewicht ca. 0.4 g Plastic material has UL classification 94V-0

bv 1500 sts

Abstract: TZ40 TZ150A TZ45A TZ78 TZ180 tz40a TZ17 TZ17A TZ18
Contextual Info: 8 1349 76 S E M ICON INC, S T-SEMICOND T7 D 97D 00584 “T - II-Ï3 » e | fll34T7b DD0DSA4 5 | ~ SILICON TRANSIENT VOLTAGE SUPPRESSORS Peak Pulse Power 15,000 Watts ST-S Part No. Revene Stand-OH Voltage Not* 1 Vr Volt» TZ17 TZ17A TZ18 TZ18A TZ20 TZ20A

SK1512

Abstract: 10i2 2SK1512 SC-65
Contextual Info: rw r 4£| \jyjc./ u i i i»w 1. Scope This sp ecifies Fuji 2 . Outline I Construction B ) Application I ) Outview power MOSFET 2 S K 1 5 1 2 - 0 1 D N-channel enhancement mode power MOSFET for switching T0-3P MK5C25623) 3 . Absolute maximum ratings at Tc=25 *C (unless otherwise specified)

n627

Abstract: AFAA TRANSISTOR MC 3041 TA1705 U028 2N744 1G21
Contextual Info: MILrS- 19500/273A NAVY 21 March 1566_ SUPERSEDING M IL-S-19500>^73(NAVY) 18 November 1063 (finn fi 9.\ v*“/ MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR TYPE TYPE 2N744 i SCOPE 1.1 D escription. - This specification covers the .detail-requirem ents for an NPN, silicon, high-speed

ASN100

Abstract: IXSH45N100 bv 1500 sts
Contextual Info: Low VCE sat IGBT IXSH/IXSM 45N100 V CES ^C25 v CE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES ^ Vco„ Td = 25°C to 150°C; RGE = 1 Mi2 = 25°C to 150°C V0ES VGEM ^C25 1000 V 1000 V Continuous ±20

U6302

Abstract: 1.5K82 1N4295 1.5K9.1A wcx 332 S860 sk47a ke200a IM270 1K6276A
Contextual Info: flICRÔSEMI CORP ESE D • bllSflhS 0001170 1 . jf£ \ T 'ih Z 3 Microjsemi Corp. ' Tfì9<fiod6e*p6f& SANTA ANA. CA SCOTTSDALE,AZ For more information calli 602 941-6300 ' or » ri 4 e l f B f i O t h r u , «*1*1 liO I V B O iO L IIIU • I FEA TU R ES

HEXFETs FETs

Abstract: h184
Contextual Info: D a ta INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHG7HO N-CHANNEL RAD HARD 100 Volt, 0.700, RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

2N341

Abstract: MIL-S-1950U a1u transistor XLO6 2N3413 a1u marking 6 A1u marking transistor c 3206
Contextual Info: M IL -S -19500/31C 1 June 1972 SUPERSEDING M IL -S -1 9 5 0 0 /3 1 B 21 Ja n u ary 1965 MILITARY SPECIFICA TION SEMICONDUCTOR DEVICE. TRANSISTOR, NPN. SILICON, LOW-POWER T Y PE 2N341 T hia sp e c ific a tio n is approved fo r u se by all D e p a rt­ m e n ts and A gencies of th e D e p a rtm e n t of D efen se?-

B170007

Abstract: B170008 sk 110 19 20n B170002 b176 SDT8111 B170003 B170004 B170005 B170006
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

H30P

Contextual Info: # IE E E Standard Microcomputer System Bus IE E E D ecem b er 29, 1 9 8 3 Published by The Institute of Electrical and Electronics Engineers, Inc 345 East 47th Street, New York, NY 10017, USA SH 09001 IEEE Standard Microcomputer System Bus Sponsor Standards Committee of the

Contextual Info: IEEE PROPOSED MICROCOMPUTER SYSTEM BUS STANDARD — P796 BUS PROPOSED MICROCOMPUTER SYSTEM BUS STANDARD P796 BUS Submitted by IEEE Computer Society Subcommittee Microcomputer System Bus Group October, 1980 m to . u. n c;eciroust. I . 19120? Brainie» All rights reserved by the In stitu te of Electrical and Electronic Engineers, Inc.

smd transistor JE

Abstract: 302401
Contextual Info: W fjim H E W L E T T wLKM P A C K A R D Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers Technical Data 6N140A* HCPL-675X 83024 HCPL-570X HCPL-177K 5962-89810 HCPL-573X HCPL-673X 5962-89785 5962-98002 *See m atrix for available extensions.

Contextual Info: WL¡m H EW LETT wLEM PACKARD Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers Technical Data 6N140A* HCPL-675X 83024 HCPL-570X HCPL-177K 5962-89810 HCPL-573X HCPL-673X 5962-89785 5962-98002 *See m atrix for available extensions. Features • Dual Marked w ith Device

smd transistor 1yc

Abstract: smd tr 1yc smd marking ACH marking code yc SMD Transistor 8302401E marking code EA SMD Transistor 8302401EA A13j 6n140a
Contextual Info: Wißt mLfïM Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers Technical Data HEWLETT PACKARD 6N140A* HCPL-675X 83024 HCPL-570X HCPL-177K 5962-89810 HCPL-573X HCPL-673X 5962-89785 5962-98002 *See m atrix fo r available extensions. Features • D ual M arked w ith D ev ice

Contextual Info: Features • High Performance, Low Power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • – 123 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

ATtiny47

Contextual Info: Features • High Performance, Low Power AVR 8-Bit Microcontroller • Advanced RISC Architecture • • • • • • – 123 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

7728A

Abstract: 80s56 ATtiny167 ATtiny16
Contextual Info: Features • High Performance, Low Power AVR 8-Bit Microcontroller • Advanced RISC Architecture • • • • • • – 123 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

design of pulse code modulation encoder

Abstract: Unipolar motor control using regular
Contextual Info: Features • High Performance, Low Power AVR 8-Bit Microcontroller • Advanced RISC Architecture • • • • • • – 123 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

ATtiny47

Abstract: crystal Oscillator 16MHZ
Contextual Info: Features • High Performance, Low Power AVR 8-Bit Microcontroller • Advanced RISC Architecture • • • • • • • – 123 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

CNR200

Abstract: optocoupler spice model CNR201 qcpl 6N139 Spice Model Precision linear optocoupler optocoupler spice L3C analog BS415 BS7002
Contextual Info: W hoI HEWLETT mLUM PACKARD H igh-Linearity Analog Optocouplers Technical Data CNR200 CNR201 Features • Low Nonlinearity: 0.01% • K3 IpD2/IpDi Transfer Gain CNR200: ±15% CNR201: ±5% • Low Gain Tempco: -65 ppm/°C • Wide Bandwidth - DC to >lMHz • Wordwide Safety Approval

Contextual Info: Features • High Performance, Low Power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • – 123 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

ATtiny167

Abstract: ATtiny87 M248 wheatstone bridge with thermistor SOIC20 wheatstone bridge interface WITH ADC introduction about Wheatstone Bridge
Contextual Info: Features • High Performance, Low Power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • – 123 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation