STP80N Search Results

transistor DI 468 circuit diagram application

Abstract: SC06140 *P80NE STP80NE03L-06 *80ne03 24v mosfet for audio 5.1 circuit transistor vds rds 12 id 80a to220
Contextual Info: STP80NE03L-06 N - CHANNEL 30V - 0.005ft - 80A - TO-220 STripFET POWER MOSFET TYPE S TP 80N E 03L-06 • . . . . V R d ss 30 V d Id S o ii < 0.006 Q. 80 A TYPICAL R D S (on) = 0.005 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 °C

STP80NE03L-06

Contextual Info: STP80NE03L-06 N - CHANNEL 30V - 0.005Ω - 80A - TO-220 STripFET POWER MOSFET TYPE V DSS R DS on ID STP80NE03L-06 30 V < 0.006 Ω 80 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie'ü’[Ki@RDD S$ STP80NE06-10 N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYPE S T P 8 0 N E 0 6 -1 0 V dss 60 V R d Id S (o i i ) <0.01 Q. 80 A . • TYPICAL RDS(on) = 0.0085 EXCEPTIONAL dv/dt CAPABILITY

80nf

Abstract: STP80NF55-06 STB80NF55-06-1 STP80NF55-06FP
Contextual Info: STP80NF55-06 - STP80NF55-06FP STB80NF55-06-1 N-CHANNEL 55V - 0.005Ω - 80A TO-220/TO-220FP/I2PAK STripFET POWER MOSFET TYPE • ■ ■ ■ ■ VDSS R DS on ID STP80NF55-06/-1 55 V <0.0065Ω 80 A STP80NF55-06FP 55 V <0.0065Ω 60 A TYPICAL RDS(on) = 0.005Ω

STP80NF03L-04

Contextual Info: STP80NF03L-04  N-CHANNEL 30V - 0.0034 Ω - 80A TO-220 STripFET POWER MOSFET PRELIMINARY DATA T YPE V DSS R DS on ID STP80NF03L-04 30 V < 0.004 Ω 80 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.0034 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

STP80NE03L-06 equivalent

Abstract: STP80NE03L-06
Contextual Info: STP80NE03L-06  N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET T YPE V DSS R DS on ID STP80NE03L-06 30 V < 0.006 Ω 80 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC

p80ne0

Abstract: P80NE P80NE06 STP80NE06-10 STP-80 200NS140
Contextual Info: STP80NE06-10 N-CHANNEL 60V - 0.0085 Ω - 80A TO-220 "SINGLE FEATURE SIZE " MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS on ID STP80NE06-10 60 V < 0.01 Ω 80 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.0085 Ω ■ EXCEPTIONAL dv/dt CAPABILITY

p80nf06

Abstract: B80NF06 max 550 transistor W80NF06 P80NF p80n
Contextual Info: STP80NF06 - STB80NF06 STW80NF06 N-CHANNEL 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET TYPE STB80NF06 STP80NF06 STW80NF06 • ■ ■ ■ VDSS RDS on ID 60 V 60 V 60 V < 0.010 Ω < 0.010 Ω < 0.010 Ω 80 A 80 A 80 A TYPICAL RDS(on) = 0.0065Ω

p80nf10

Abstract: b80nf10 P80NF-10
Contextual Info: STP80NF10 STB80NF10 N-CHANNEL 100V - 0.012Ω - 80A - TO-220/D2PAK LOW GATE CHARGE STripFET II MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID STB80NF10 STP80NF10 100 V 100 V < 0.015 Ω < 0.015 Ω 80 A 80 A • ■ ■ ■ TYPICAL RDS(on) = 0.012Ω

P80NF10

Abstract: P80NF b80nf1 b80nf10 P80NF-10
Contextual Info: STB80NF10 STP80NF10 N-channel 100V - 0.012Ω - 80A - TO-220 / D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID(1) STP80NF10 100V <0.015Ω 80A STB80NF10 100V <0.015Ω 80A • Exceptional dv/dt capability ■ 100% Avalanche tested

80NF03

Abstract: 80NF03L 80nf03l-04 STP80NF03L-04
Contextual Info: STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 N-CHANNEL 30V - 0.0035 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE STB80NF03L-04/-1 STP80NF03L-04 • ■ ■ ■ VDSS R DS on ID 30 V 30 V <0.004 Ω <0.004 Ω 80 A 80 A TYPICAL RDS(on) = 0.0035Ω

STP80NF03L-04

Contextual Info: STB80NF03L-04-1 STP80NF03L-04 N-CHANNEL 30V - 0.0035Ω - 80A I2PAK/TO-220 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS R DS on ID STB80NF03L-04-1 STP80NF03L-04 30 V 30 V <0.004 Ω <0.004 Ω 80 A 80 A TYPICAL RDS(on) = 0.0035Ω EXCEPTIONAL dv/dt CAPABILITY

STP80NS04Z

Contextual Info: STP80NS04Z N-CHANNEL CLAMPED 7.5mΩ - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP80NS04Z • ■ ■ ■ V DSS R DS on ID CLAMPED <0.008 Ω 80 A TYPICAL RDS(on) = 0.0075 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION

STP80NE03L-06

Abstract: stp80* equivalent STP80NE03L-06 equivalent STP80NE03L
Contextual Info: STP80NE03L-06 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE V DSS R DS on ID STP80NE03L-06 30 V < 0.006 Ω 80 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC

p80n05

Contextual Info: STP80N05-09 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P80N05-09 • ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.009 Ω 80 A ULTRA HIGH DENSITY TECHNOLOGY TYPICAL RDS(on) = 7 mΩ AVALANCHE RUGGED TECHNOLOGY

STP80NS04Z

Contextual Info: STP80NS04Z N - CHANNEL CLAMPED 7.5mΩ - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP80NS04Z • ■ ■ ■ VDSS R DS on CLAMPED <0.008 Ω ID 80 A TYPICAL RDS(on) = 0.0075 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION

p80nf06

Abstract: JESD97 STB80NF06 STB80NF06T4 STP80NF06 STW80NF06 P80NF
Contextual Info: STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET Features Type VDSS RDS on ID STB80NF06 60V <0.008Ω 80A STP80NF06 60V <0.008Ω 80A 3 1 STW80NF06 60V • 100% avalanche tested ■ Low threshold drive

STP80N03L-06

Contextual Info: STP80N03L-06 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR TENTATIVE DATA TYPE V DSS R DS on ID STP80N03L-06 30 V < 0.006 Ω 80 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP80N06-10

Abstract: STP80N06
Contextual Info: STP80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP80N06-10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.010 Ω 80 A TYPICAL RDS(on) = 8.5 mΩ AVALANCHE RUGGED TECHNOLOGY 100% AVALANCE TESTED

Contextual Info: STP80NF12 N-channel 120 V, 0.013 Ω typ., 80 A, STripFET II Power MOSFET in a TO-220 package Datasheet - production data Features Type VDSS RDS on max ID STP80NF12 120 V < 0.018 Ω 80 A TAB • Exceptional dv/dt capability • 100% avalanche tested 3

Contextual Info: STP80NS04Z N - CHANNEL CLAMPED 7.5mQ - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP80N S04Z . . . . V ds s RDS on Id CLAM PED < 0 .0 0 8 Q 80 A TYPICAL RDS(on) = 0.0075 Î2 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 °C MAXIMUM JUNCTION

DD 127 D TRANSISTOR

Abstract: g50n
Contextual Info: r r 7 Ä T# S G S -T H O M S O N K K M iL E O T O R « S T P 8 0 N 0 5 -0 9 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE STP80N05-09 . • . . . . V dss RöS on Id 50 V < 0.009 Í2 80 A ULTRA HIGH DENSITY TECHNOLOGY TYPICAL R d s (oii) = 7 mQ

STB80NF55-08

Abstract: STB80NF55-08-1 STP80NF55-08 57 -1 80 515 diode
Contextual Info: STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE STB80NF55-08/-1 STP80NF55-08 • ■ VDSS RDS on ID 55 V 55 V <0.008 Ω <0.008 Ω 80 A 80 A TYPICAL RDS(on) = 0.0065Ω LOW THRESHOLD DRIVE

STP80NE03L-06

Contextual Info: STP80NE03L-06 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE V DSS R DS on ID STP80NE03L-06 30 V < 0.006 Ω 80 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC