P80N05 Search Results
P80N05 Price and Stock
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NEC Electronics Group NP80N055MDG-S18-AYMOSFET N-Channel 55V 80A TO-220-3 Tube |
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NP80N055MDG-S18-AY | 6,350 | 1 |
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Renesas Electronics Corporation NP80N055KLE-E1-AYMOSFET N-Channel 55V 80A (Tc) TO-263-3 T/R |
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NP80N055KLE-E1-AY | 1,600 | 1 |
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Renesas Electronics Corporation NP80N055MHE-S18-AYMOSFET N-Channel 55V 80A (Tc) TO-220-3 Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NP80N055MHE-S18-AY | 2,400 | 1 |
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Renesas Electronics Corporation NP80N055PDG-E1B-AYMOSFET N-Channel 55V 80A TO-263-3 T/R |
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NP80N055PDG-E1B-AY | 5,000 | 1 |
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Renesas Electronics Corporation NP80N055MDG-S18-AYPower Field-Effect Transistor, 80A I(D), 55V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NP80N055MDG-S18-AY | 8,762 |
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P80N05 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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p80n05Contextual Info: P80N05-09 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P80N05-09 • ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.009 Ω 80 A ULTRA HIGH DENSITY TECHNOLOGY TYPICAL RDS(on) = 7 mΩ AVALANCHE RUGGED TECHNOLOGY |
Original |
stp80n05-09p80n05-09o-220p80n05 |