P80N Search Results

p80n05

Contextual Info: P80N05-09 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P80N05-09 • ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.009 Ω 80 A ULTRA HIGH DENSITY TECHNOLOGY TYPICAL RDS(on) = 7 mΩ AVALANCHE RUGGED TECHNOLOGY

P80NE06

Abstract: p80ne06-10 p80ne0 P80NE p80ne06.10
Contextual Info: P80NE06-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST P80NE06-10 • ■ ■ ■ V DSS R DS on ID 60 V <0.01 Ω 80 A TYPICAL RDS(on) = 0.0085 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED

p80ne0

Abstract: P80NE03L-06 P80NE p80ne03 st microelectronics MOSFET 2000 STP80NE03L-06 st microelectronics MOSFET automotive P80NE03L
Contextual Info: P80NE03L-06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA T YPE V DSS R DS o n ID ST P80NE03L-06 30 V < 0.006 Ω 80 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

P80NE03L-06

Abstract: p80ne03 p80ne0 P80NE P80NE03L STP80NE03L-06 st microelectronics MOSFET 2000 p80ne03l06
Contextual Info: P80NE03L-06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET T YPE V DSS R DS o n ID ST P80NE03L-06 30 V < 0.006 Ω 80 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC

P80N06-10

Abstract: p80n06 STP80N06-10
Contextual Info: P80N06-10 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P80N06-10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.010 Ω 80 A TYPICAL RDS(on) = 8.5 mΩ AVALANCHE RUGGED TECHNOLOGY 100% AVALANCE TESTED

P80N03

Abstract: P80N03L-06
Contextual Info: P80N03L-06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TENTATIVE DATA TYPE V DSS R DS on ID ST P80N03L-06 30 V < 0.006 Ω 80 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

uPD754202

Abstract: C10943X
Contextual Info: µPD754202 4-BIT SINGLE-CHIP MICROCONTROLLERS 1996 Document No. U11132EJ2V0UM00 2nd edition Date Published May 1997 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and

p80ne0

Abstract: P80NE P80NE06 STP80NE06-10 STP-80 200NS140
Contextual Info: P80NE06-10 N-CHANNEL 60V - 0.0085 Ω - 80A TO-220 "SINGLE FEATURE SIZE " MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS on ID P80NE06-10 60 V < 0.01 Ω 80 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.0085 Ω ■ EXCEPTIONAL dv/dt CAPABILITY

p80nf06

Abstract: B80NF06 max 550 transistor W80NF06 P80NF p80n
Contextual Info: P80NF06 - STB80NF06 STW80NF06 N-CHANNEL 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET TYPE STB80NF06 P80NF06 STW80NF06 • ■ ■ ■ VDSS RDS on ID 60 V 60 V 60 V < 0.010 Ω < 0.010 Ω < 0.010 Ω 80 A 80 A 80 A TYPICAL RDS(on) = 0.0065Ω

p80nf10

Abstract: b80nf10 P80NF-10
Contextual Info: P80NF10 STB80NF10 N-CHANNEL 100V - 0.012Ω - 80A - TO-220/D2PAK LOW GATE CHARGE STripFET II MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID STB80NF10 P80NF10 100 V 100 V < 0.015 Ω < 0.015 Ω 80 A 80 A • ■ ■ ■ TYPICAL RDS(on) = 0.012Ω

P80NF10

Abstract: P80NF b80nf1 b80nf10 P80NF-10
Contextual Info: STB80NF10 P80NF10 N-channel 100V - 0.012Ω - 80A - TO-220 / D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID(1) P80NF10 100V <0.015Ω 80A STB80NF10 100V <0.015Ω 80A • Exceptional dv/dt capability ■ 100% Avalanche tested

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

btm-220

Abstract: MKL series diode SKE 1/10 similar ic xa 222 uPD754264 nec Semiconductors Selection Guide U12287E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

BTM-220

Abstract: uPD754202 uPD75F4264 uPD75F4264A nec 16 bit Microcontroller
Contextual Info: Preliminary User’s Manual mPD75F4264 4-bit Single-chip Microcontrollers mPD75F4264 mPD75F4264A Document No. U12695EJ1V0UM00 1st edition Date Published September 1997 N Printed in Japan 1997 [MEMO] NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

Contextual Info: P80NF12 N-channel 120 V, 0.013 Ω typ., 80 A, STripFET II Power MOSFET in a TO-220 package Datasheet - production data Features Type VDSS RDS on max ID P80NF12 120 V < 0.018 Ω 80 A TAB • Exceptional dv/dt capability • 100% avalanche tested 3

p60nf06

Abstract: P90NF03 P60NF p60nf06l p90nf03l p80nf75 P80NF5 p60nf0 P90NF p40nf10
Contextual Info: AN1624 APPLICATION NOTE STSR3 SIMPLIFIES IMPLEMENTATION OF SYNCHRONOUS RECTIFIER IN FLYBACK CONVERTER F. Librizzi - F. Lentini 1. ABSTRACT This paper describes the functionality and the operation of the STSR3 device used as the secondary synchronous rectifier driver in Flyback topology switched mode power supplies. A Schematic and layout

P80NF03

Abstract: P80NF P80NF03L STP80NF03L airbag p80n
Contextual Info: P80NF03L N-CHANNEL 30V - 0.004 Ω - 80A TO-220 STripFET II MOSFET TYPE P80NF03L • ■ ■ ■ VDSS RDS on ID 30 V < 0.0045 Ω 80 A TYPICAL RDS(on) = 0.004 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE 3 1 2 TO-220 DESCRIPTION

P80NF5

Abstract: p80nf55-08 P80NF550 p80nf55 P80NF*55-08 P80NF b80nf55-08 b80nf55 P80NF5508 p80n
Contextual Info: P80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET Table 1: General Features TYPE STB80NF55-08/-1 P80NF55-08 • ■ Figure 1:Package VDSS RDS on ID 55 V 55 V <0.008 Ω <0.008 Ω 80 A

P80NF04

Abstract: STB80NF04 STB80NF04T4 STP80NF04 B80NF04
Contextual Info: STB80NF04 P80NF04 N-CHANNEL 40V - 0.008 Ω - 80A D²PAK/TO-220 STripFET II POWER MOSFET PRELIMINARY DATA • ■ ■ ■ ■ TYPE VDSS RDS on ID STB80NF04 P80NF04 40 V 40 V < 0.010 Ω < 0.010 Ω 80 A 80 A TYPICAL RDS(on) = 0.008 Ω EXCEPTIONAL dv/dt CAPABILITY

P80NF06

Abstract: P80NF JESD97 STB80NF06 STB80NF06T4 STP80NF06 STW80NF06
Contextual Info: P80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET General features Type VDSS RDS on ID STB80NF06 60V <0.010Ω 80A P80NF06 60V <0.010Ω 80A 3 1 STW80NF06 60V • Exceptional dv/dt capability

Contextual Info: P80NF10FP N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID(1) P80NF10FP 100V <0.015Ω 38A • Exceptional dv/dt capability ■ 100% Avalanche tested ■ Application oriented characterization

pcb 308B

Abstract: 308B nec 4308 EM 257 p4308 uPD75308 RA75X sx1 lcd TR122 UPD75304
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

p80nf55-08

Abstract: w80nf55-08 w80nf55 P80NF5 ST MAKE mosfet p80nf55 08 14511 p80nf55 Transistor equivalents b80nf55-08 P80NF*55-08
Contextual Info: STB80NF55-08T4 P80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D2PAK, TO-247 STripFET Power MOSFET Features • Type VDSS RDS on max ID STB80NF55-08T4 55 V < 0.008 Ω 80 A P80NF55-08 55 V < 0.008 Ω 80 A STW80NF55-08 55 V < 0.008 Ω

pcb 308B

Abstract: EM 235 setting EM 257 p4308 75328 S7 em 223 nec 4308 P0016 p328 0108
Contextual Info: User’s Manual IE-75300-R-EM 75X Series Emulation Board 75XL Series Emulation Board Version 1.47 For IE-75001-R IE-75000-R Document No. U11354EJ3V0UM00 3rd edition Date Published July 1997 N Printed in Japan 1994 [MEMO] EEPROM is a trademark of NEC Corporation.