STI40 Search Results

72-PIN

Abstract: STI404000-60 STI404000-70 STI404000-80
Contextual Info: 72-PIN SIMMS - STI404000 4M X 40 DRAM SIMM Memory Module FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC STI404000-60 60ns 15ns 110ns STI404000-70 70ns 20ns 130ns STI404000-80 80ns 20ns 150ns STI404000 is a 4M bits x 40 Dynamic RAM high density memory

but46a

Abstract: PEC730
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 -30 2SC251SM 2SC2535 2SC2535 2SC3570 STI401 STI413 IR413 BU129 BUT11 SPT3439 BUT11F BUT11F 2SC2518L MJ425 MJ425 MJ425 BUT46 BU120 ~~6~~1SK 35 40 2S09S7 PMS5K425 SOT1015 BUS11A BUT11A BUW11AF BUX46A

v125d

Contextual Info: STI402000 72-PIN SIMMS 2M X 40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI402000 is a 2M bits x 40 Dynamic RAM high density memory module. The Simple Technology STI402000 consist of twenty CMOS 1M x 4 DRAMs in 20-pin

edo dram 72-pin simm

Abstract: "24 pin" DRAM edo dram 60ns 72-pin simm STI404004-60T simm 72 pin edo
Contextual Info: STI404004-60T 4M X 40 Bits DRAM SIMM with ECC and EDO FEATURES • Performance range: STI404004-60T • • • • • • • • GENERAL DESCRIPTION tRAC tCAC tRC tHPC 60ns 15ns 104ns 25ns EDO Mode operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability

Contextual Info: STI404100 72-PIN SIMMS 4M X 40 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC *RC STI404100-60 60ns 15ns 110 ns STI404100-70 70ns 20 ns 130ns STI404100-80 80ns 20 ns 150ns The Simple Technology STI404100 is a 4M bits < 40 Dynamic

Contextual Info: STI408000 72-PIN SIMMS 8M X 40 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC STI408000-60 60ns 15ns 110ns STI408000-70 70ns 20ns 130ns STI408000-80 80ns 20ns 150ns The Simple Technology STI408000 is a 8M bits :< 40 Dynamic

400N4F6

Contextual Info: STI400N4F6, STP400N4F6 N-channel 40 V, 120 A STripFET VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages Datasheet − preliminary data Features Order codes STI400N4F6 STP400N4F6 VDSS RDS on max ID TAB TAB 40 V < 1.7 mΩ 120 A(1) 1. Limited by package

Contextual Info: STI408100 72-PIN SIMMS 8M X 40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI408100 is a 8M bits :< 40 Dynamic RAM high density memory module. The Simple Technology STI408100 consist of twenty CMOS 4M x 4 DRAMs in 24-pin

Contextual Info: STI404000 72-PIN SIMMS 4M X 40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI404000 is a 4M bits x 40 Dynamic RAM high density memory module. The Simp e Technology STI404000 consist of ten CMOS 4M x 4 DRAMs in 24-pin SOJ

cq24

Abstract: CQ25
Contextual Info: STI401000 72-PIN SIMMS 1MX 40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI401000 is a 1M bits x 40 Dynamic RAM high density memory module. The Simpie Technology STI401000 consist of ten CMOS 1M x 4 DRAMs in 20-pin SOJ

STI408004-60T

Abstract: simm 72 pinout DQ28-31
Contextual Info: STI408004-60T 8M X 40 Bits DRAM SIMM with ECC and EDO FEATURES • GENERAL DESCRIPTION Performance range: tRC tRAC tCAC This product is a 8M x 40 bits Dynamic RAM DRAM Single Inline Memory Module (SIMM). This module consists of twenty CMOS 4M x 4 bits DRAMs in 24-pin SOJ packages mounted

STI-430

Abstract: DTS-411 DTS-804 Transistor DTS801 DTS-430 DTS-423 transistor MJ 15024 STI801 DTS-723 transistor st 431
Contextual Info: SEMICONDUCTOR TECHNOLOGY OSE D J fll3bM5fl D G 0 0 2 S b NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS STI Type ST-13071 ST-13080 ST-13081 ST-13090 ST-13091 Industry Type MJ-13071 MJ-13080 MJ-13081 MJ-13090 MJ-13091 Power Dissipation @25 °C watts

SKC10C75

Abstract: SKC10C70 SKC10A75 2sc2303 BUY70 STI403 2SC2650 idc33
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type >c Max V BR CEO (A) Of) PD Max hFE fT ON) Min (Hz) ICBO t0N r (CE)sat Toper Max Max (A) (8) Max (Ohms) Max (°C) Package Style D vices 20 Watts or More, (Cont'd) 5 10 15 20 25 30 35 40 45

STI60

Abstract: STI40 STI50 STI70 STI70-331K STI60-101K 1-51K sti-605 STI701
Contextual Info: SURFACE MOUNT POWER INDUCTORS STI SERIES FEATURES - Good for IR reflow - Sturdy construction - High current handling ability - Compact, good for high density applications ELECTRICAL CHARACTERISTICS - Inductance range - Test frequency - Rated current range

ssp11n60s5

Abstract: SSP11n60 STW5N150 SVT6251 STI3005 ST4N150 STI-3007 A STP8N90 SVT6060 SVT300-5
Contextual Info: STI Type: SSP11N60S5 Notes: Breakdown Voltage: Continuous Current: RDS on Ohm: Trans Conductance Mhos: Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: Polarity:

STI-705

Abstract: SE7057 J500 720 pnp
Contextual Info: ~m S E M I C O N D U C T O R T E C H N O L O G Y , IN C . I ,rn. n n n n T i q n i “ fil3LMSfi DGD0.S11 ^ H IG H V O L T A G E S I L I C O N L O W A N D M E D I U M P O W E R T R A N S I S T O R S n □ I 3131 S. E. Jay Street rs I Stuart' Florida 34997

STI-3007

Abstract: STI-3007 A STI3007 2N546b SE7020 2N3583 2N3584 2N3738 2N3739 2N4296
Contextual Info: SE MICO ND UC TO R TECHNOLOGY OSE D I fl13b 4 Sfl 00□0221 1 1 SEMICONDUCTOR TECHNOLOGY, INC. ^ L l l i L y N J ; U L HIGH VOLTAGE SILICON MEDIUM POWER TRANSISTORS • -r ' w oO -n/ g 0, 0H c c , ct t J 3131 S.E. Jay Street " Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511

diode 2U 66

Abstract: STI3007 diode 2U 55 2u 85 diode STI-3007 diode 2U SSP60B STH506 2N3741 MOTOROLA 2sc2317
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Of) (A) hFE fT ICBO Max PD ON) Min (Hz) (A) Max r Max (s) (CE)Mt 'oper Max (Ohms) Max (°C) 600m 600m 175 175 140 140 J J J J 140 175 140 140 175 J J J J J Package Style Devices 20 Watts or More, (Cont'd)

B0410

Abstract: MJ050 STI-3007 STI3007 NS034 2N3439S TO5
Contextual Info: POWER SILICON NPN Ic Item Number Part Number I C -5 10 - 15 20 >= -30 g:~g TRS3006 042R2 042R2 2S0198 2S0860A 40327L 40327S 2SC1050 2N5252 044R4 044R4 044R4 2N5253 044R8 044R8 TRS30X5 t~~g~~ 35 40 TRS30X TRS30X TRS30X B0410 2N6772 BUW40A BUW40A 2N5092 ~~~~98

ST10011

Abstract: 800-3D ST10023 STI-5740 DTS4061 4025 to-3 dts1010 ST10007 DTS1020 STI5740
Contextual Info: SE MICONDU CTOR TECHNOL OG Y GSE D | fll3b4Sfl □□□□23b □ T- 33T- 33-3/ NPN & PNP’ SILICON DARLINGTON TRANSISTORS STI Type Industry Type-. Power Dissipation @ 2 5 0C watts Vc b O (volts) VCER (volts) VCE(SAT.) Vbe (SAT.)@Ic hpE@ lc •CEV (volts)

SKC10C70

Abstract: SKC10A75 BUX8 2SC2650 SKC10A70 2SC330 SGSIF441
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 1814-3502 1814-3505 SPT4624 2SC1468 2N6251 STIPl755 TIPl755 TIPl755 ~~~~g~01 35 40 1814-3702 1814-3705 BUT12 (A) BUn2 (A) BUn2 (A) SKC10A70 SKC10A75 SKC10C70 S~~~~3~~ 45 50 BUX80 SMl13303 2SC1469